KR20000066966A - Apparatus for cleaning semiconductor wafer - Google Patents

Apparatus for cleaning semiconductor wafer Download PDF

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Publication number
KR20000066966A
KR20000066966A KR1019990014409A KR19990014409A KR20000066966A KR 20000066966 A KR20000066966 A KR 20000066966A KR 1019990014409 A KR1019990014409 A KR 1019990014409A KR 19990014409 A KR19990014409 A KR 19990014409A KR 20000066966 A KR20000066966 A KR 20000066966A
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South Korea
Prior art keywords
semiconductor wafer
cleaning
injection nozzle
spin cup
cleaning liquid
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KR1019990014409A
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Korean (ko)
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신종섭
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윤종용
삼성전자 주식회사
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Priority to KR1019990014409A priority Critical patent/KR20000066966A/en
Publication of KR20000066966A publication Critical patent/KR20000066966A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2259/00Type of treatment
    • B01D2259/80Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/804UV light
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2259/00Type of treatment
    • B01D2259/80Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818Employing electrical discharges or the generation of a plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for cleaning a semiconductor wafer is provided to prevent a cleaning liquid from splashing out of a cleaning bath, by stably spraying the cleaning liquid into the surface of the semiconductor wafer. CONSTITUTION: An apparatus for cleaning a semiconductor wafer(40) comprises a cleaning bath(12), a turntable, a spin cup(14), a first spraying nozzle(32), a second spraying nozzle(34) and a third spraying nozzle. The turntable is established in the cleaning bath, on which a semiconductor wafer to clean is placed. The spin cup is established in an upper part of the cleaning bath, and at least two openings are formed on a side surface of the spin cup. The first spraying nozzle is established in the cleaning bath, and is positioned on one of the openings of the spin cup, so that a cleaning liquid is sprayed in the same direction as the semiconductor wafer rotates. The second spraying nozzle is installed in parallel with the first spraying nozzle. The third spraying nozzle sprays a nitrogen gas to the surface of the semiconductor wafer, installed on another opening of the spin cup.

Description

반도체 웨이퍼의 세정장치{APPARATUS FOR CLEANING SEMICONDUCTOR WAFER}Semiconductor wafer cleaning equipment {APPARATUS FOR CLEANING SEMICONDUCTOR WAFER}

본 발명은 반도체 소자 제조장치에 관한 것으로, 좀 더 구체적으로는 반도체 웨이퍼 제조공정에서 반도체 웨이퍼 표면을 세정하기 위하여 사용되는 반도체 웨이퍼 세정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly, to a semiconductor wafer cleaning apparatus used for cleaning a semiconductor wafer surface in a semiconductor wafer manufacturing process.

반도체 제조공정 중에서 가장 기본적인 기술의 하나가 세정기술이다. 반도체 제조 과정은 웨이퍼의 표면을 형성하기 위하여 여러 단계의 공정을 거치게 된다. 이때, 각 단계에서 소정의 공정이 수행되는 반도체 웨이퍼 표면에는 불필요한 박막과 각종 오염물이 생기고 잔존하게 되므로 일정시간 반도체 웨이퍼를 세정하여 공정을 진행해야 한다. 그러므로, 세정 기술은 반도체 제조 공정중에 발생하는 여러 가지 박막과 오염물을 물리적 화학적 방법을 구사해서 제거하고 있다.One of the most basic technologies in the semiconductor manufacturing process is the cleaning technology. The semiconductor manufacturing process goes through several steps to form the surface of the wafer. At this time, since the unnecessary thin film and various contaminants are formed and remain on the surface of the semiconductor wafer where a predetermined process is performed in each step, the semiconductor wafer must be cleaned for a predetermined time. Therefore, the cleaning technique removes various thin films and contaminants generated during the semiconductor manufacturing process using physical and chemical methods.

도 1은 반도체 웨이퍼를 세정하기 위하여 사용되는 종래 세정장치를 도시한 구성도이다. 도 1을 참조하면, 종래 세정장치(100)는 세정조(102)와, 상기 세정조(102)에 위치된 반도체 웨이퍼(120)의 표면에 초순수를 분사하는 제 1 및 제 2 노즐(112,114), 그리고 질소가스를 분사하는 노즐(116)로 이루어진다. 그러나 이러한 종래 세정장치(100)는 도 1에서 보여주는 바와 같이, 제 1 노즐(112)에서 초순수가 분사되는 방향과 반도체 웨이퍼(120)가 회전하는 방향이 서로 역방향이기 때문에, 반도체 웨이퍼 표면의 크리닝시 제 1 노즐(112)에서 분사되는 초순수가 세정조(102) 밖으로 튀게 된다. 이때, 상기 세정조(102) 밖으로 튀는 초순수는 설비 내부의 전기적 쇼트의 원인으로 작용하게 되며, 심한 경우 설비다운까지 발생시키는 문제점이 있었다.1 is a block diagram showing a conventional cleaning apparatus used for cleaning a semiconductor wafer. Referring to FIG. 1, a conventional cleaning apparatus 100 includes a cleaning tank 102 and first and second nozzles 112 and 114 that spray ultrapure water onto a surface of a semiconductor wafer 120 located in the cleaning tank 102. And a nozzle 116 for injecting nitrogen gas. However, in the conventional cleaning apparatus 100, as shown in FIG. 1, since the direction in which ultrapure water is injected from the first nozzle 112 and the direction in which the semiconductor wafer 120 rotates are opposite to each other, when cleaning the surface of the semiconductor wafer. Ultrapure water sprayed from the first nozzle 112 is splashed out of the cleaning tank 102. At this time, the ultrapure water splashing out of the cleaning tank 102 acts as a cause of electrical shorts inside the facility, and in some cases, there is a problem of causing downtime.

본 발명은 이와 같은 종래의 문제점을 해결하기 위한 것으로, 그 목적은 반도체 웨이퍼의 표면에 세정액이 안정적으로 분사되도록 하는 새로운 형태의 반도체 웨이퍼의 세정장치를 제공하는데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional problem, and an object thereof is to provide a cleaning apparatus for a semiconductor wafer of a new type to stably spray the cleaning liquid onto the surface of the semiconductor wafer.

도 1은 종래 반도체 웨이퍼 세정장치를 보여주는 도면;1 is a view showing a conventional semiconductor wafer cleaning apparatus;

도 2는 본 발명의 실시예에 따른 반도체 웨이퍼 세정장치의 세정조를 보여주는 도면;2 is a view showing a cleaning tank of a semiconductor wafer cleaning apparatus according to an embodiment of the present invention;

도 3은 본 발명의 실시예에 따른 반도체 웨이퍼 세정장치에서 세정액의 분사방향을 보여주는 도면이다.3 is a view showing a spraying direction of the cleaning liquid in the semiconductor wafer cleaning apparatus according to the embodiment of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

12 : 세정조 14 : 스핀컵12: washing tank 14: spin cup

32 : 제 1 분사노즐 34 : 제 2 분사노즐32: first injection nozzle 34: second injection nozzle

36 : 제 3 분사노즐 40 : 반도체 웨이퍼36: third injection nozzle 40: semiconductor wafer

상술한 목적을 달성하기 위한 본 발명의 특징에 의하면, 반도체 웨이퍼의 세정장치는 세정조와; 상기 세정조에 설치되고 상면에 세척하기 위한 반도체 웨이퍼가 놓여지는 턴테이블과; 상기 세정조의 상단에 설치되는 그리고 측면에 적어도 2개의 오프닝이 형성된 스핀컵과; 상기 세정조에 설치되고 상기 턴테이블에 놓여진 반도체 웨이퍼의 회전방향과 동일한 방향으로 세정액이 분사되도록 상기 스핀컵의 어느 하나의 오프닝상에 위치되는 제 1 분사노즐과; 상기 제 1 분사노즐과 나란히 설치되는 제 2 분사노즐 및; 상기 스핀컵의 다른 오프닝상에 설치되고 질소가스를 상기 반도체 웨이퍼상에 분사하는 제 3 분사노즐을 포함한다.According to a feature of the present invention for achieving the above object, a cleaning apparatus for a semiconductor wafer includes a cleaning tank; A turntable installed in the cleaning tank and having a semiconductor wafer for cleaning on an upper surface thereof; A spin cup installed at an upper end of the cleaning tank and having at least two openings formed at a side thereof; A first injection nozzle installed in the cleaning tank and positioned on one opening of the spin cup such that the cleaning liquid is injected in the same direction as the rotation direction of the semiconductor wafer placed on the turntable; A second injection nozzle installed in parallel with the first injection nozzle; And a third injection nozzle installed on another opening of the spin cup and injecting nitrogen gas onto the semiconductor wafer.

이와 같은 본 발명에서 상기 세정액은 초순수로 이루어진다.In the present invention as described above the cleaning liquid is made of ultrapure water.

상술한 반도체 웨이퍼의 세정장치에 의하면, 제 1 및 제 2 분사노즐로부터 세정액이 반도체 웨이퍼의 회전방향과 동일한 방향으로 분사되기 때문에 세정액이 반도체 웨이퍼 표면에 닿을 때 튀는 현상을 최소화 할 수 있다.According to the cleaning apparatus of the semiconductor wafer described above, the cleaning liquid is sprayed from the first and second injection nozzles in the same direction as the rotation direction of the semiconductor wafer, so that the phenomenon of splashing when the cleaning liquid contacts the semiconductor wafer surface can be minimized.

이하, 첨부된 도면 도 2 내지 도 3을 참조하면서 본 발명의 실시예를 보다 상세히 설명한다. 상기 도면들에 있어서 동일한 기능을 수행하는 구성요소에 대해서는 동일한 참조번호가 병기되어 있다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are given to components that perform the same function.

도 2는 본 발명의 실시예에 따른 반도체 웨이퍼 세정장치의 세정조를 보여주는 도면이다. 도 3은 본 발명의 실시예에 따른 반도체 웨이퍼 세정장치에서 세정액의 분사상태를 보여주는 도면이다.2 is a view showing a cleaning tank of a semiconductor wafer cleaning apparatus according to an embodiment of the present invention. 3 is a view showing an injection state of the cleaning liquid in the semiconductor wafer cleaning apparatus according to the embodiment of the present invention.

도 2 및 도 3을 참조하면, 본 발명의 실시예에 따른 반도체 웨이퍼 세정장치(10)는 세정조(12)와, 턴테이블, 스핀컵(14), 제 1 분사노즐(32), 제 2 분사노즐(34) 및 제 3 분사노즐(36)로 이루어진다. 도 2에 도시된 세정장치는 초음파를 사용하여 세정을 하는 초음파 세정장치를 나타낸 것이다.2 and 3, a semiconductor wafer cleaning apparatus 10 according to an embodiment of the present invention includes a cleaning tank 12, a turntable, a spin cup 14, a first injection nozzle 32, and a second injection. It consists of a nozzle 34 and a third injection nozzle 36. The cleaning apparatus shown in FIG. 2 shows an ultrasonic cleaning apparatus for cleaning using ultrasonic waves.

상기 턴테이블은 상기 세정조(12)내에 설치되며 상기 반도체 웨이퍼(40)에 의해 가려져 도면에는 도시되지 않았다. 상기 턴테이블 상면에는 세척하기 위한 반도체 웨이퍼(40)가 놓여진다. 상기 스핀컵(14)은 상기 세정조(12)의 상단에 설치된다. 상기 스핀컵(14)은 상기 세정조(12)의 상단에 설치되며 측면에는 3개의 오프닝(16a,16b,16c)이 형성된다. 상기 스핀컵(14)의 오프닝상에는 노즐들이 위치된다.The turntable is installed in the cleaning tank 12 and is covered by the semiconductor wafer 40 and is not shown in the drawing. On the top surface of the turntable is placed a semiconductor wafer 40 for cleaning. The spin cup 14 is installed on the upper end of the cleaning tank 12. The spin cup 14 is installed at the upper end of the cleaning tank 12 and three openings 16a, 16b, and 16c are formed at the side surface. Nozzles are positioned on the opening of the spin cup 14.

반도체 웨이퍼(40)를 세정하기 위한 세정액을 분사하는 상기 제 1 분사노즐(32)과 제 2 분사노즐(34)은 나란히 상기 세정조(12)의 외벽에 고정 설치된다. 한편, 상기 제 1 및 제 2 분사노즐(32,34)은 상기 스핀컵(14)의 제 1 오프닝(16a)상에 위치되며, 상기 제 1 분사노즐(32)과 제 2 분사노즐(34)은 상기 턴테이블에 놓여진 반도체 웨이퍼(40)의 회전방향과 동일한 방향으로 세정액을 분사할 수 있는 분사각도를 갖는다. 상기 세정액으로는 초순수를 사용한다.The first injection nozzle 32 and the second injection nozzle 34 which spray the cleaning liquid for cleaning the semiconductor wafer 40 are fixedly installed on the outer wall of the cleaning tank 12 side by side. Meanwhile, the first and second injection nozzles 32 and 34 are positioned on the first opening 16a of the spin cup 14, and the first and second injection nozzles 32 and 34 are disposed on the first opening 16a. Has an injection angle capable of spraying the cleaning liquid in the same direction as the rotational direction of the semiconductor wafer 40 placed on the turntable. Ultrapure water is used as the cleaning liquid.

상기 반도체 웨이퍼 표면으로 질소가스를 분사하기 위한 상기 제 3 분사노즐(36)은 상기 스핀컵(14)의 제 2 오프닝(16b)상에 위치되도록 상기 세정조(12)에 설치된다.The third injection nozzle 36 for injecting nitrogen gas onto the surface of the semiconductor wafer is installed in the cleaning tank 12 so as to be positioned on the second opening 16b of the spin cup 14.

예컨대, 상기 제 1 분사노즐(32)은 기존 제 3 분사노즐이 위치했던 부분에 설치되며, 상기 제 3 분사노즐(36)은 기존 제 1 분사노즐이 위치했던 곳에 설치된다. 즉, 기존의 제 1 분사노즐과 제 3 분사노즐의 위치를 서로 맞바꿈에 따라 비용을 절감할 수 있다.For example, the first injection nozzle 32 is installed at the portion where the existing third injection nozzle is located, and the third injection nozzle 36 is installed at the position where the existing first injection nozzle is located. That is, as the positions of the existing first injection nozzle and the third injection nozzle are interchanged with each other, the cost can be reduced.

여기서 본 발명의 구조적인 특징은 반도체 웨이퍼 표면으로 초순수를 분사하는 제 1 및 제 2 분사노즐의 분사각이 반도체 웨이퍼의 회전방향과 동일하게 이루어지는데 있다.The structural feature of the present invention is that the injection angles of the first and second injection nozzles for injecting ultrapure water onto the surface of the semiconductor wafer are the same as the rotational direction of the semiconductor wafer.

도 3에 표시된 화살표(a)는 반도체 웨이퍼의 회전방향을 표시한 것이며, 화살표(b)는 상기 제 1 분사노즐(32) 및 제 2 분사노즐(34)로부터 분사되는 초순수의 분사방향을 표시한 것이다. 이와 같이, 본 발명의 세정장치에서는 반도체 웨이퍼(40)의 회전방향과 초순수의 분사방향(b)이 일치하기 때문에 초순수가 반도체 웨이퍼의 표면 막질에 닿는 순간의 충격이 감소될 수 있는 것이다. 따라서 초순수가 튀는 현상을 막을 수 있다.An arrow a shown in FIG. 3 indicates a rotation direction of the semiconductor wafer, and an arrow b indicates an injection direction of ultrapure water sprayed from the first injection nozzle 32 and the second injection nozzle 34. will be. As described above, in the cleaning apparatus of the present invention, since the rotation direction of the semiconductor wafer 40 coincides with the injection direction b of the ultrapure water, the impact at the moment when the ultrapure water contacts the surface film of the semiconductor wafer can be reduced. Therefore, it is possible to prevent the splashing of ultrapure water.

이와 같은 본 발명의 반도체 웨이퍼 세정장치에 의하면, 반도체 웨이퍼의 표면에 세정액이 안정적으로 분사되므로서, 기존에 세정액이 세정조 밖으로 튀던 문제를 해결할 수 있다. 따라서, 설비내부 또는 근접한 다른 장치의 전기적인 쇼트로 인한 고장율이 감소되고 환경안전이 개선되는 효과가 있다.According to the semiconductor wafer cleaning apparatus of the present invention as described above, since the cleaning liquid is stably sprayed on the surface of the semiconductor wafer, the problem of the conventional cleaning liquid splashing out of the cleaning tank can be solved. Therefore, there is an effect that the failure rate due to the electrical short of the other device in the facility or in close proximity is reduced and the environmental safety is improved.

Claims (2)

세정조와;A washing tank; 상기 세정조에 설치되고 상면에 세척하기 위한 반도체 웨이퍼가 놓여지는 턴테이블과;A turntable installed in the cleaning tank and having a semiconductor wafer for cleaning on an upper surface thereof; 상기 세정조의 상단에 설치되는 그리고 측면에 적어도 2개의 오프닝이 형성된 스핀컵과;A spin cup installed at an upper end of the cleaning tank and having at least two openings formed at a side thereof; 상기 세정조에 설치되고 상기 턴테이블에 놓여진 반도체 웨이퍼의 회전방향과 동일한 방향으로 세정액이 분사되도록 상기 스핀컵의 어느 하나의 오프닝상에 위치되는 제 1 분사노즐과;A first injection nozzle installed in the cleaning tank and positioned on one opening of the spin cup such that the cleaning liquid is injected in the same direction as the rotation direction of the semiconductor wafer placed on the turntable; 상기 제 1 분사노즐과 나란히 설치되는 제 2 분사노즐 및;A second injection nozzle installed in parallel with the first injection nozzle; 상기 스핀컵의 다른 오프닝상에 설치되고 질소가스를 상기 반도체 웨이퍼상에 분사하는 제 3 분사노즐을 포함하여,A third injection nozzle installed on the other opening of the spin cup and injecting nitrogen gas onto the semiconductor wafer, 세정액이 상기 웨이퍼의 회전방향과 동일한 방향으로 반도체 웨이퍼의 표면에 분사되므로서 세정액이 세정조 밖으로 튀기는 현상을 최소화할 수 있는 것을 특징으로 하는 반도체 웨이퍼의 세정장치.And a cleaning liquid is sprayed onto the surface of the semiconductor wafer in the same direction as the rotational direction of the wafer, thereby minimizing the splashing of the cleaning liquid out of the cleaning tank. 제 1 항에 있어서,The method of claim 1, 상기 세정액은 초순수인 것을 특징으로 하는 반도체 웨이퍼 세정장치.And said cleaning liquid is ultrapure water.
KR1019990014409A 1999-04-22 1999-04-22 Apparatus for cleaning semiconductor wafer KR20000066966A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101037180B1 (en) * 2008-10-24 2011-05-26 세메스 주식회사 A Bath for Treating Wafer in System for Manufacturing Semiconductor
WO2017135542A1 (en) * 2016-02-05 2017-08-10 (주)이오테크닉스 Wafer cleaning appartaus
CN115121568A (en) * 2022-06-28 2022-09-30 智程半导体设备科技(昆山)有限公司 Groove type cleaning machine for wafer production

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101037180B1 (en) * 2008-10-24 2011-05-26 세메스 주식회사 A Bath for Treating Wafer in System for Manufacturing Semiconductor
WO2017135542A1 (en) * 2016-02-05 2017-08-10 (주)이오테크닉스 Wafer cleaning appartaus
CN115121568A (en) * 2022-06-28 2022-09-30 智程半导体设备科技(昆山)有限公司 Groove type cleaning machine for wafer production
CN115121568B (en) * 2022-06-28 2023-03-28 苏州智程半导体科技股份有限公司 Groove type cleaning machine for wafer production

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