KR970072097A - Method for forming bonding pads of semiconductor devices - Google Patents
Method for forming bonding pads of semiconductor devices Download PDFInfo
- Publication number
- KR970072097A KR970072097A KR1019960012727A KR19960012727A KR970072097A KR 970072097 A KR970072097 A KR 970072097A KR 1019960012727 A KR1019960012727 A KR 1019960012727A KR 19960012727 A KR19960012727 A KR 19960012727A KR 970072097 A KR970072097 A KR 970072097A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- polyimide film
- forming
- predetermined
- metal wiring
- Prior art date
Links
Landscapes
- Wire Bonding (AREA)
Abstract
본 발명은 반도체 소자의 제조공정에서 와이어 본딩을 위한 본딩 패드 형성방법을 개시한다. 이 방법은 소정의 단위 셀 및 배선 등이 형성된 반도체 기판 상부에 소정의 층간 절연용 산화막이 형성된 반도체 소자에 있어서, 산화막 위에 소정 두께의 본딩 패드용 금속배선을 형성하는 단계; 금속배선 위에 보호막을 형성하는 단계; 보호막 위에 낮은 점도를 가지면서 순차적으로 점도가 높아지는 다층 폴리이미드막을 순차적으로 소정 두께로 도포하는 단계; 도포된 폴리이미드막을 소프트 베이크하는 단계; 금속배선 상부의 다층 폴리이미드막의 소정 부분을 노광 및 현상공정을 통하여 제거하는 단계; 제거되고 남은 폴리이미드막을 큐어링하는 단계; 노출된 보호막을 제거하는 단계를 포함하는 것을 특징으로 한다.The present invention discloses a method of forming a bonding pad for wire bonding in a manufacturing process of a semiconductor device. This method comprises the steps of: forming a predetermined interlayer insulating oxide film on a semiconductor substrate on which predetermined unit cells and wirings are formed; forming a metal wiring for a bonding pad having a predetermined thickness on the oxide film; Forming a protective film on the metal wiring; Sequentially coating a multi-layered polyimide film having a low viscosity on the protective film and having a high viscosity sequentially, to a predetermined thickness; Soft baking the applied polyimide film; Removing a predetermined portion of the multilayer polyimide film on the metal wiring through an exposure and development process; Curing the removed and remaining polyimide film; And removing the exposed protective film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 본 발명의 실시예에 따른 것으로서, 본딩 패드를 형성하기 위한 과정을 보여주는 공정 흐름도.FIG. 2 is a process flow diagram illustrating a process for forming a bonding pad according to an embodiment of the present invention. FIG.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960012727A KR970072097A (en) | 1996-04-24 | 1996-04-24 | Method for forming bonding pads of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960012727A KR970072097A (en) | 1996-04-24 | 1996-04-24 | Method for forming bonding pads of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970072097A true KR970072097A (en) | 1997-11-07 |
Family
ID=66217330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960012727A KR970072097A (en) | 1996-04-24 | 1996-04-24 | Method for forming bonding pads of semiconductor devices |
Country Status (1)
Country | Link |
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KR (1) | KR970072097A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100787267B1 (en) * | 2004-08-27 | 2007-12-21 | 학교법인 동국대학교 | passivation method of using photoactive polyimide |
KR100861293B1 (en) * | 2002-12-09 | 2008-10-01 | 주식회사 하이닉스반도체 | Method for fabricating photoresist pattern |
-
1996
- 1996-04-24 KR KR1019960012727A patent/KR970072097A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100861293B1 (en) * | 2002-12-09 | 2008-10-01 | 주식회사 하이닉스반도체 | Method for fabricating photoresist pattern |
KR100787267B1 (en) * | 2004-08-27 | 2007-12-21 | 학교법인 동국대학교 | passivation method of using photoactive polyimide |
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WITN | Withdrawal due to no request for examination |