KR100861293B1 - Method for fabricating photoresist pattern - Google Patents

Method for fabricating photoresist pattern Download PDF

Info

Publication number
KR100861293B1
KR100861293B1 KR1020020077978A KR20020077978A KR100861293B1 KR 100861293 B1 KR100861293 B1 KR 100861293B1 KR 1020020077978 A KR1020020077978 A KR 1020020077978A KR 20020077978 A KR20020077978 A KR 20020077978A KR 100861293 B1 KR100861293 B1 KR 100861293B1
Authority
KR
South Korea
Prior art keywords
seconds
polyimide film
exposure
temperature
photosensitive film
Prior art date
Application number
KR1020020077978A
Other languages
Korean (ko)
Other versions
KR20040050798A (en
Inventor
고차원
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020020077978A priority Critical patent/KR100861293B1/en
Publication of KR20040050798A publication Critical patent/KR20040050798A/en
Application granted granted Critical
Publication of KR100861293B1 publication Critical patent/KR100861293B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 반도체 제조 공정에서 웨이퍼 위에 PIX 공정용 감광막 패턴을 제조할 수 있는 감광막 패턴 제조 방법에 관해 개시한 것으로서, 웨이퍼 위에 열산발생제를 함유한 폴리이미드막을 코팅하는 단계와, 기판에 소프트 베이킹 공정을 실시하는 단계와, 결과물에 노광 및 현상 공정을 진행하여 감광막 패턴을 형성하는 단계와, 감광막 패턴을 포함한 기판에 큐어링을 실시하는 단계를 포함한다.The present invention relates to a photosensitive film pattern manufacturing method capable of manufacturing a photosensitive film pattern for a PIX process on a wafer in a semiconductor manufacturing process, the method comprising: coating a polyimide film containing a thermal acid generator on a wafer; And forming a photoresist pattern by performing an exposure and development process on the resultant, and curing the substrate including the photoresist pattern.

Description

감광막 패턴 제조 방법{METHOD FOR FABRICATING PHOTORESIST PATTERN}Photosensitive film pattern manufacturing method {METHOD FOR FABRICATING PHOTORESIST PATTERN}

도 1은 노광광을 조사받은 폴리이미드막의 일부분에 화학 반응이 진행된 것을 보인 도면.1 is a view showing that a chemical reaction proceeds to a part of a polyimide film irradiated with exposure light.

도 2는 노광광을 조사받지 않은 폴리이미드막의 타부분을 도시한 도면.2 is a view showing the other part of the polyimide film not exposed to the exposure light.

도 3은 큐어링 공정에 의한 폴리이미드 성분의 감광막 패턴의 화학 변화를 도시한 도면.FIG. 3 shows chemical changes of the photosensitive film pattern of the polyimide component by the curing process. FIG.

도 4a 내지 도 4d는 본 발명에 따른 감광막 패턴 제조 방법을 설명하기 위한 공정단면도.4A to 4D are cross-sectional views illustrating a method of manufacturing a photosensitive film pattern according to the present invention.

도 5 및 도 9는 본 발명에 따른 열산 발산제의 실시예들을 보인 도면.5 and 9 show embodiments of the heat dissipating agent in accordance with the present invention.

본 발명은 반도체 소자의 제조 방법에 관한 것으로, 보다 구체적으로는 반도체 제조 공정에서 웨이퍼 위에 PIX 공정용 감광막 패턴을 제조할 수 있는 감광막 패턴 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a photosensitive film pattern capable of manufacturing a photosensitive film pattern for a PIX process on a wafer in a semiconductor manufacturing process.

일반적으로 알려진 바와 같이, 반도체 제조 공정을 통하여 형성된 디바이스가 알파-파티클(alpha-particle) 등과 같은 환경에 대한 안정을 가지도록 하기 위 해, 웨이퍼 위에 폴리이미드(polyimide)막을 코팅한 다음, 노광 및 현상 공정을 거쳐서 감광막 패턴을 형성한다.As is commonly known, in order to ensure that devices formed through semiconductor manufacturing processes are environmentally stable, such as alpha-particles, a polyimide film is coated on the wafer, followed by exposure and development. A photosensitive film pattern is formed through a process.

도 1은 노광광을 조사받은 폴리이미드막의 일부분에 화학 반응이 진행된 것을 보인 도면이다. 또한, 도 2는 노광광을 조사받지 않은 폴리이미드막의 타부분을 도시한 도면이다.1 is a view showing that a chemical reaction proceeds to a part of a polyimide film irradiated with exposure light. 2 is a view showing the other part of the polyimide film which is not irradiated with exposure light.

종래 기술에 따른 감광막 패턴 제조 방법은, 먼저, 웨이퍼 위에 폴리이미드(polyimide)막을 코팅한 다음, 노광 및 현상 공정을 실시하여 소정 형상의 감광막 패턴을 형성한다. 이때, 상기 노광 공정에서, 노광광을 받지 않는 폴리이미드막의 일부분은, 도 2에 도시된 바와 같이, 현상액에 의해 용해되지 않는 반면에, 노광광을 받은 폴리이미드막의 타부분은, 도 3에 도시된 바와 같이, 현상액에 용해되는 PBO(PolyBenzOxazole precursor)물질로 변화된다.In the method of manufacturing a photoresist pattern according to the prior art, first, a polyimide film is coated on a wafer, and then an exposure and development process is performed to form a photoresist pattern having a predetermined shape. At this time, in the exposure process, a portion of the polyimide film that does not receive exposure light is not dissolved by the developer as shown in FIG. 2, while the other part of the polyimide film that receives the exposure light is shown in FIG. 3. As described above, it is changed into PBO (PolyBenzOxazole precursor) material dissolved in the developer.

그런 다음, 상기 감광막 패턴이 형성된 웨이퍼에 큐어링(curing)공정을 실시한다. Then, a curing process is performed on the wafer on which the photoresist pattern is formed.

도 3은 큐어링 공정에 의한 폴리이미드 성분의 감광막 패턴의 화학 변화를 도시한 도면이다.3 is a diagram showing chemical changes in the photosensitive film pattern of the polyimide component by the curing process.

이때, 상기 큐어링 공정은, 도 3에 도시된 바와 같이, 통상적으로 퍼니스(furnace) 또는 DHP(DeHydoration)오븐에서 350도에서 2시간 동안 베이킹을 실시한다. 이러한 큐어링 공정을 통해 용매가 증발하게 되고 열경화가 이루어져서 열적으로 안정한 상태로 변화된다.At this time, the curing process, as shown in Figure 3, typically performs a baking for 2 hours at 350 degrees in a furnace (furnace) or DHP (DeHydoration) oven. Through this curing process, the solvent is evaporated and thermally cured to change to a thermally stable state.

그러나, 종래의 기술에서는 고온의 큐어링 공정을 진행하기 위해서는 오븐(oven) 또는 퍼니스(furnace)가 필요하며, 또한 큐어링 공정에 소요되는 시간이 길어지는 문제점이 있었다. However, in the prior art, an oven or a furnace is required to proceed a high temperature curing process, and there is a problem in that the time required for the curing process becomes longer.

이에 본 발명은 상기 종래의 문제점을 해결하기 위해 안출된 것으로, 저온의 큐어링 온도에서 단시간에 감광막 패턴을 제조할 수 있는 감광막 제조 방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, and an object thereof is to provide a photosensitive film manufacturing method that can produce a photosensitive film pattern in a short time at a low temperature curing temperature.

상기 목적을 달성하기 위한 본 발명에 따른 감광막 패턴 제조 방법은, 웨이퍼 위에 열산발생제를 함유한 폴리이미드막을 코팅하는 단계와, 기판에 소프트 베이킹 공정을 실시하는 단계와, 결과물에 노광 및 현상 공정을 진행하여 감광막 패턴을 형성하는 단계와, 감광막 패턴을 포함한 기판에 큐어링을 실시하는 단계를 포함한 것을 특징으로 한다.According to an aspect of the present invention, there is provided a method of manufacturing a photosensitive film pattern, the method comprising: coating a polyimide film containing a thermal acid generator on a wafer, performing a soft baking process on a substrate, and exposing and developing the resultant to a resultant product. It proceeds to form a photoresist pattern, and characterized in that it comprises the step of curing the substrate including the photoresist pattern.

상기 열산발생제는 0.1∼5wt% 함량을 가지며, 상기 폴리이미드막은 2∼15㎛ 두께로 코팅한다.The thermal acid generator has a content of 0.1 to 5 wt%, and the polyimide film is coated with a thickness of 2 to 15 μm.

상기 소프트 베이킹 공정은 90℃의 온도에서 90초동안 실시한다.The soft baking process is carried out for 90 seconds at a temperature of 90 ℃.

상기 노광 공정은 아이라인, KrF, EUV, 전자빔, 이온빔 및 엑스레이 중 어느 하나의 노광광을 이용하고, 400mJ/Cm2 의 에너지를 공급한다.The exposure process uses an exposure light of any one of eyeline, KrF, EUV, electron beam, ion beam, and X-ray, and supplies energy of 400mJ / Cm 2.

상기 현상 공정은 2.38% TMAH용액에서 90초동안 실시하거나 0.1∼10% TMAH용액에서 5∼100초 동안 실시한다.The developing process is carried out for 90 seconds in 2.38% TMAH solution or for 5-100 seconds in 0.1-10% TMAH solution.

상기 노광 공정과 현상 공정 사이에 90℃온도에서 90초동안 PEB를 실시하는 단계를 추가한다.Adding a step of performing PEB for 90 seconds at a temperature of 90 ℃ between the exposure process and the development process.

상기 큐어링 공정은 150∼250℃ 온도에서 5분 동안 진행한다.The curing process is carried out for 5 minutes at a temperature of 150 ~ 250 ℃.

이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 4a 내지 도 4d는 본 발명에 따른 감광막 패턴 제조 방법을 설명하기 위한 공정단면도이다.4A to 4D are cross-sectional views illustrating a method of manufacturing a photosensitive film pattern according to the present invention.

도 5 및 도 9는 본 발명의 열산 발산제의 실시예들을 보인 도면이다.5 and 9 illustrate embodiments of the heat dissipating agent of the present invention.

본 발명의 일실시예에 따른 감광막 패턴 형성 방법은, 도 4a에 도시된 바와 같이, 먼저 웨이퍼(1) 위에 열산 발산제를 함유한 폴리이미드막(3)을 2∼15㎛ 두께로 코팅한다. 이때, 상기 열산 발산제는 110∼200℃ 온도에서 가열되면 산을 생성하는 물질로서, 폴리이미드막의 전체 함량 중 0.1∼5wt% 를 차지한다. 상기 열산 발산제의 예로는 도 5에서 도 9에 도시된 바와 같다. In the method of forming a photosensitive film pattern according to an embodiment of the present invention, as shown in FIG. 4A, first, a polyimide film 3 containing a heat dissipating agent is coated on the wafer 1 to a thickness of 2 to 15 μm. At this time, the thermal acid dissipating agent is a material that generates an acid when heated at a temperature of 110 ~ 200 ℃, occupies 0.1 to 5wt% of the total content of the polyimide film. Examples of the heat dissipating agent are as shown in Figs.

따라서, 이러한 특성을 가진 열산 발산제를 폴리이미드막에 첨가하게 되면, 이후의 큐어링 공정은 200℃ 온도 미만으로 상대적으로 낮은 온도에서 진행가능하다.Therefore, when a heat dissipating agent having such characteristics is added to the polyimide film, the subsequent curing process can proceed at a relatively low temperature below 200 ° C.

그런 다음, 상기 폴리이미드막(3)을 포함한 기판에 소프트 베이킹 공정을 진행한다. 이때, 상기 소프트 베이킹 공정은 90℃의 온도에서 90초동안 실시한다.Then, a soft baking process is performed on the substrate including the polyimide film 3. At this time, the soft baking process is carried out for 90 seconds at a temperature of 90 ℃.

이 후, 도 4b 내지 도 4c에 도시된 바와 같이, 상기 베이킹 공정이 완료된 기판에 마스크(M)를 이용하여 노광, 현상 및 건조 공정을 차례로 실시함으로서 소정 형상의 감광막 패턴(3a)을 형성한다. 이때, 상기 노광 공정은 아이라인, KrF, EUV, 전자빔, 이온빔 및 엑스레이 중 어느 하나의 노광광을 이용하며, 400mJ/Cm2 의 에너지를 공급한다. Thereafter, as illustrated in FIGS. 4B to 4C, the photosensitive film pattern 3a having a predetermined shape is formed by sequentially performing exposure, development, and drying processes using the mask M on the substrate on which the baking process is completed. In this case, the exposure process uses an exposure light of any one of eyeline, KrF, EUV, electron beam, ion beam, and X-ray, and supplies energy of 400mJ / Cm 2.

상기 노광 공정에서, 노광광을 받지 않는 폴리이미드막의 일부분은 현상액에 의해 용해되지 않는 반면에, 노광광을 받은 폴리이미드막의 타부분은 현상액에 용해되는 PBO물질로 변화된다.In the exposure process, a portion of the polyimide film that does not receive exposure light is not dissolved by the developer, while the other portion of the polyimide film that receives the exposure light is changed to a PBO material dissolved in the developer.

또한, 상기 현상 공정은 2.38% TMAH용액에서 90초동안 실시하거나 0.1∼10% TMAH용액에서 5∼100초 동안 실시한다. 한편, 상기 노광 공정과 현상 공정 사이에 90℃온도에서 90초동안 PEB(Post Exposure Baking)를 실시한다.In addition, the developing process is carried out for 90 seconds in 2.38% TMAH solution or 5 to 100 seconds in 0.1-10% TMAH solution. On the other hand, PEB (Post Exposure Baking) is performed for 90 seconds between the exposure process and the development process at a temperature of 90 ℃.

이어, 도 4d에 도시된 바와 같이, 상기 감광막 패턴(3a)을 포함한 기판을 LHP(Low pressure Hot Plate)오븐(미도시)에 인입시킨 다음, 150∼250℃ 온도에서 5분동안 큐어링 공정(5)을 진행한다. 상기 폴리이미드막으로부터 발생된 산은 탈수소(dehydration) 반응에서 촉매로 작용하여 큐어링 온도를 낮추고 단시간에 진행가능하도록 한다.Subsequently, as shown in FIG. 4D, the substrate including the photoresist pattern 3a is introduced into a low pressure hot plate (LHP) oven (not shown), and then cured at a temperature of 150 to 250 ° C. for 5 minutes ( Proceed to 5). The acid generated from the polyimide membrane acts as a catalyst in the dehydration reaction to lower the curing temperature and allow for a short time to proceed.

상기 큐어링 공정(5)에 의해 열경화가 이루어져서 열적으로 안정한 상태로 변화된다.By the curing process (5), the thermosetting is made to change into a thermally stable state.

본 발명에 따르면, 폴리이미드막에 110∼200℃ 온도에서 가열되면 산을 생성하는 물질인 열산 발산제를 첨가함으로써, 이 후의 큐어링 공정온도를 200℃ 이하로 낮출 수 있다. According to the present invention, a subsequent curing process temperature can be lowered to 200 ° C. or lower by adding a thermal acid dissipating agent, which is a substance that generates an acid when heated to a polyimide film at 110 to 200 ° C. temperature.

이상에서와 같이, 본 발명은 폴리이미드막에 110∼200℃ 온도에서 가열되면 산을 생성하는 물질인 열산 발산제를 첨가함으로써, 큐어링 온도가 기존의 350℃에서 200℃ 이하로 낮출 수 있다. 또한, 큐어링 공정은 별도의 퍼니스 또는 DHP오븐없이 LHP오븐에 의해 진행 가능하며, 큐어링 공정 시간도 5분으로 단축시킬 수 있다.As described above, according to the present invention, the curing temperature can be lowered from the existing 350 ° C. to 200 ° C. or less by adding a heat dissipating agent, which is a substance that generates an acid when heated at 110 to 200 ° C., to the polyimide membrane. In addition, the curing process can be carried out by the LHP oven without a separate furnace or DHP oven, the curing process time can be shortened to 5 minutes.

따라서, 본 발명은 큐어링 공정을 저온의 큐어링 온도에서 단시간 동안 진행함으로써, 생산성이 향상되는 이점이 있다.Therefore, the present invention has the advantage of improving the productivity by proceeding the curing process for a short time at a curing temperature of low temperature.

기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다. In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

Claims (9)

웨이퍼 위에 열산발생제를 함유한 폴리이미드막을 코팅하는 단계와,Coating a polyimide film containing a thermal acid generator on the wafer, 상기 기판에 소프트 베이킹 공정을 실시하는 단계와,Performing a soft baking process on the substrate; 상기 결과물에 노광 및 현상 공정을 진행하여 감광막 패턴을 형성하는 단계와,Exposing and developing the resultant to form a photoresist pattern; 상기 감광막 패턴을 포함한 기판에 큐어링을 실시하는 단계를 포함한 것을 특징으로 하는 감광막 패턴 형성 방법.Method of forming a photosensitive film pattern comprising the step of performing a curing on the substrate including the photosensitive film pattern. 제 1항에 있어서, 상기 열산발생제는 0.1∼5wt% 함량을 가진 것을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, wherein the thermal acid generator has a content of 0.1 to 5 wt%. 제 1항에 있어서, 상기 폴리이미드막은 2∼15㎛ 두께로 코팅하는 것을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, wherein the polyimide film is coated with a thickness of 2 to 15 μm. 제 1항에 있어서, 상기 소프트 베이킹 공정은 90℃의 온도에서 90초동안 실시하는 것을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, wherein the soft baking process is performed at a temperature of 90 ° C. for 90 seconds. 제 1항에 있어서, 상기 노광 공정은 아이라인, KrF, EUV, 전자빔, 이온빔 및 엑스레이 중 어느 하나의 노광광을 이용하고, 400mJ/Cm2 의 에너지를 공급하는 것 을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, wherein the exposure process comprises supplying energy of 400 mJ / Cm 2 using exposure light of any one of an eye line, KrF, EUV, an electron beam, an ion beam, and an X-ray. 제 1항에 있어서, 상기 현상 공정은 2.38% TMAH용액에서 90초동안 실시하는 것을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, wherein the developing step is performed for 90 seconds in a 2.38% TMAH solution. 제 1항에 있어서, 상기 현상 공정은 0.1∼10% TMAH용액에서 5∼100초 동안 실시하는 것을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, wherein the developing step is performed for 5 to 100 seconds in a 0.1 to 10% TMAH solution. 제 1항에 있어서, 상기 노광 공정과 현상 공정 사이에 90℃온도에서 90초동안 PEB를 실시하는 단계를 추가하는 것을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, further comprising the step of performing PEB for 90 seconds between the exposure process and the development process at a temperature of 90 ℃. 제 1항에 있어서, 상기 큐어링 공정은 150∼250℃ 온도에서 5분 동안 진행하는 것을 특징으로 하는 감광막 패턴 형성 방법.The method of claim 1, wherein the curing process is performed at 150 to 250 ° C. for 5 minutes.
KR1020020077978A 2002-12-09 2002-12-09 Method for fabricating photoresist pattern KR100861293B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020020077978A KR100861293B1 (en) 2002-12-09 2002-12-09 Method for fabricating photoresist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020077978A KR100861293B1 (en) 2002-12-09 2002-12-09 Method for fabricating photoresist pattern

Publications (2)

Publication Number Publication Date
KR20040050798A KR20040050798A (en) 2004-06-17
KR100861293B1 true KR100861293B1 (en) 2008-10-01

Family

ID=37344925

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020077978A KR100861293B1 (en) 2002-12-09 2002-12-09 Method for fabricating photoresist pattern

Country Status (1)

Country Link
KR (1) KR100861293B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101599102B1 (en) * 2013-06-11 2016-03-02 주식회사 엘지화학 Polyimide resin composition and polyimide film

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970072097A (en) * 1996-04-24 1997-11-07 김주용 Method for forming bonding pads of semiconductor devices
KR980012133A (en) * 1996-07-29 1998-04-30 김광호 Method for manufacturing thin film transistor of semiconductor device
JPH10208997A (en) * 1997-01-16 1998-08-07 Fujitsu Ltd Method and apparatus forming pattern of resist film
KR0147976B1 (en) * 1995-06-30 1998-10-15 배순훈 A method for planarization patterning onto the thin film head
JP2000221672A (en) * 1999-02-02 2000-08-11 Semiconductor Leading Edge Technologies Inc Pattern forming material and pattern forming method
KR20020006627A (en) * 1999-03-12 2002-01-23 스티븐티.워쇼 Hydroxy-epoxide thermally cured undercoat for 193㎚ lithography

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0147976B1 (en) * 1995-06-30 1998-10-15 배순훈 A method for planarization patterning onto the thin film head
KR970072097A (en) * 1996-04-24 1997-11-07 김주용 Method for forming bonding pads of semiconductor devices
KR980012133A (en) * 1996-07-29 1998-04-30 김광호 Method for manufacturing thin film transistor of semiconductor device
JPH10208997A (en) * 1997-01-16 1998-08-07 Fujitsu Ltd Method and apparatus forming pattern of resist film
JP2000221672A (en) * 1999-02-02 2000-08-11 Semiconductor Leading Edge Technologies Inc Pattern forming material and pattern forming method
KR20020006627A (en) * 1999-03-12 2002-01-23 스티븐티.워쇼 Hydroxy-epoxide thermally cured undercoat for 193㎚ lithography

Also Published As

Publication number Publication date
KR20040050798A (en) 2004-06-17

Similar Documents

Publication Publication Date Title
JP6022469B2 (en) Substrate double patterning method
US7527918B2 (en) Pattern forming method and method for manufacturing a semiconductor device
JP2007036249A (en) Well photoresist pattern of semiconductor device, and method for forming same
US20110003253A1 (en) Method of manufacturing semiconductor device and pattern formation method
JP2010080903A (en) Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus
KR100456312B1 (en) Method of forming ultra fine contact hole for semiconductor device
US4988609A (en) Method of forming micro patterns
KR100861293B1 (en) Method for fabricating photoresist pattern
KR19990003857A (en) Photosensitive film formation method
KR100555474B1 (en) Fine pattern forming method using acid treatment of photoresist
JP2001326153A (en) Method of forming resist pattern
JP2010073899A (en) Method for processing substrate and substrate processing apparatus
KR100451508B1 (en) A method for forming contact hole of semiconductor device
KR100369866B1 (en) Method for forming fine contact hole in semiconductor device
JPH0511652B2 (en)
JP2000182940A (en) Method of forming resist pattern
TW569305B (en) Method for shrinking critical dimension of semiconductor devices
JP2604573B2 (en) Fine pattern forming method
TW486740B (en) Improved method for controlling critical dimension during high temperature photoresist reflow process by ultraviolet light irradiation
KR20040102984A (en) Sub_micron pattern forming method of semiconductor device
JP2002025935A (en) Conductor member forming method and pattern forming method
JP3441439B2 (en) Method of forming fine resist pattern and method of manufacturing semiconductor device
JPH0562894A (en) Forming method for fine pattern
JPH0385544A (en) Resist pattern forming method
JPS6231122A (en) Formation of pattern

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee