KR970067588A - 반도체 제조용 레지스트 라미네이트 및 패턴 형성 방법 - Google Patents
반도체 제조용 레지스트 라미네이트 및 패턴 형성 방법 Download PDFInfo
- Publication number
- KR970067588A KR970067588A KR1019970011279A KR19970011279A KR970067588A KR 970067588 A KR970067588 A KR 970067588A KR 1019970011279 A KR1019970011279 A KR 1019970011279A KR 19970011279 A KR19970011279 A KR 19970011279A KR 970067588 A KR970067588 A KR 970067588A
- Authority
- KR
- South Korea
- Prior art keywords
- tertiary amyl
- compound
- resist
- emitter
- copolymer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8077274A JPH09269597A (ja) | 1996-03-29 | 1996-03-29 | 半導体製造用レジスト積層体およびパターン形成方法 |
JP96-77274 | 1996-03-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970067588A true KR970067588A (ko) | 1997-10-13 |
Family
ID=13629288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970011279A KR970067588A (ko) | 1996-03-29 | 1997-03-28 | 반도체 제조용 레지스트 라미네이트 및 패턴 형성 방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH09269597A (ja) |
KR (1) | KR970067588A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990055188A (ko) * | 1997-12-27 | 1999-07-15 | 김영환 | 감광막 패턴 형성을 위한 반사방지막 |
-
1996
- 1996-03-29 JP JP8077274A patent/JPH09269597A/ja not_active Withdrawn
-
1997
- 1997-03-28 KR KR1019970011279A patent/KR970067588A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH09269597A (ja) | 1997-10-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |