KR970059323A - Thin film deposition apparatus and thin film deposition method using the same - Google Patents

Thin film deposition apparatus and thin film deposition method using the same Download PDF

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KR970059323A
KR970059323A KR1019960002080A KR19960002080A KR970059323A KR 970059323 A KR970059323 A KR 970059323A KR 1019960002080 A KR1019960002080 A KR 1019960002080A KR 19960002080 A KR19960002080 A KR 19960002080A KR 970059323 A KR970059323 A KR 970059323A
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thin film
chamber
substrate
precursor solution
droplet
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KR1019960002080A
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우성일
박승빈
박원석
정현진
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김광호
삼성전자 주식회사
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Priority to KR1019960002080A priority Critical patent/KR970059323A/en
Priority to JP8243666A priority patent/JPH09213643A/en
Publication of KR970059323A publication Critical patent/KR970059323A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

박말을 형성시키는 박막 증착 장치에 관하여 개시한다. 본 발명은 기판 상에 화학 화합물(chemical compound)의 박막을 증착하는 장치에 있어서, 하나 또는 그 이상의 화학 원소를 갖는 전구체 용액(precursor solution)이 담겨 있는 저장조와, 상기 전구체 용액을 이송시키는 이송 수단과, 상기 이송된 전구체 용액의 온도를 일정하게 하고, 액적(mist)으로 변환시키는 액적 분무 장치와, 상기 액정 분무 장치에 연결된 노즐을 통하여 상기 액적이 주입되는 챔버와, 상기 챔버 내에 상기 기판이 놓이는 호울더와, 상기 챔버의 압력을 조절하기 위한 압력 조절 수단으로 구성되어, 상기 기판 상에 상기 주입된 액적을 증착시켜 박막을 형성하는 것을 특징으로 하는 박막 증착 장치를 제공한다. 본 발명에 의하면, 금속 박막의 조성 제어가 쉽고 상온 및 상압 조건에서 박막을 형성할 수 있다.A thin film deposition apparatus for forming a thin film is disclosed. The present invention provides an apparatus for depositing a thin film of a chemical compound on a substrate, comprising: a reservoir containing a precursor solution having one or more chemical elements; a transporting means for transporting the precursor solution; A droplet spraying device for uniformly bringing the temperature of the transferred precursor solution to a predetermined temperature and for converting the temperature of the transferred precursor solution into a mist; a chamber into which the droplet is injected through a nozzle connected to the liquid crystal atomizing device; And a pressure regulating means for regulating a pressure of the chamber, wherein the injected droplet is deposited on the substrate to form a thin film. According to the present invention, it is easy to control the composition of the metal thin film, and a thin film can be formed at room temperature and atmospheric pressure.

Description

박막 증착 장치 및 이를 이용한 박막 증착 방법Thin film deposition apparatus and thin film deposition method using the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명에 의한 박막 증착 장치를 설명하기 위한 개략도이다.FIG. 1 is a schematic view for explaining a thin film deposition apparatus according to the present invention.

제2도는 본 발명에 의한 박막 증착 방법을 설명하기 위하여 도시한 흐름도이다.FIG. 2 is a flow chart for explaining a thin film deposition method according to the present invention.

Claims (25)

기판 상에 화학 화합물(chemical compound)의 박막을 증착하는 장치에 있어서, 하나 또는 그 이상의 화학 원소를 갖는 전구체 용액(precursor solution)이 담겨 있는 저장조; 상기 전구체 용액을 이송시키는 이송수단; 상기 이송된 전구체 용액의 일정한 온도로 유지시키고, 상기 이송된 전구체 용액을 액적(mist)으로 변화시키는 액적 분무 장치; 상기 액정 분무 장치에 연결된 노즐을 통하여 상기 액적이 주입되는 챔버; 상기 챔버내에 상기 기판이 놓이는 호울더; 및 상기 챔버의 압력을 조절하기 위한 압력 조절 수단으로 구성되어, 상기 기판 상에 상기 주입된 액적을 증착시켜 박막을 형성하는 것을 특징으로 하는 박막 증착 장치.An apparatus for depositing a thin film of a chemical compound on a substrate, the apparatus comprising: a reservoir containing a precursor solution having one or more chemical elements; Transport means for transporting the precursor solution; A droplet sprayer for maintaining the transferred precursor solution at a constant temperature and changing the transferred precursor solution to a mist; A chamber into which the droplet is injected through a nozzle connected to the liquid crystal atomizing device; A holder in which the substrate is placed in the chamber; And a pressure adjusting means for adjusting a pressure of the chamber, wherein the thin film is formed by depositing the injected droplet on the substrate. 제1항에 있어서, 상기 이송 수단은 상기 저장조에 연결된 펌프인 것을 특징으로 하는 박막 증착 장치.The thin film deposition apparatus according to claim 1, wherein the transfer means is a pump connected to the reservoir. 제1항에 있어서, 상기 액적 분무 장치에 운반 기체를 제어할 수 있는 질량 유속 제어기가 연결되어 있는 것을 특징으로 하는 박막 증착 장치.The thin film deposition apparatus according to claim 1, wherein a mass flow controller capable of controlling a carrier gas is connected to the droplet spraying apparatus. 제1항에 있어서, 상기 챔버의 상부에 상기 기판 상에서 상기 주입돈 액적이 막으로서의 반응이 촉진되도록 광에너지 제공수단을 설치되어 것을 특징으로 하는 박막 증착 장치.The thin-film deposition apparatus according to claim 1, wherein a light energy providing means is provided on an upper portion of the chamber so that the reaction of the injection donor droplet as a film on the substrate is promoted. 제4항에 있어서, 상기 광에너지 제공 수단은 자외선 램프인 것을 특징으로 하는 박막 증착 장치.The thin film deposition apparatus according to claim 4, wherein the light energy providing means is an ultraviolet lamp. 제1항에 있어서, 상기 액적 분무 장치에 전구체 용액의 수위를 조절하는 수위 조절기가 연결되어 있는 것을 특징으로 하는 박막 증착 장치.The thin film deposition apparatus according to claim 1, wherein the liquid atomizing device is connected to a level controller for adjusting the level of the precursor solution. 제1항에 있어서, 상기 챔버 내에 증착되는 박막의 두께를 모니터링 하는 모니터링부를 구비하는 것을 특징으로 하는 박막 증착 장치.The thin film deposition apparatus according to claim 1, further comprising a monitoring section for monitoring a thickness of a thin film deposited in the chamber. 제1항에 있어서, 상기 호울더는 회전 가능하고 기판 가열 수단을 포함하는 것을 특징으로 하는 박막 증착 장치.The thin film deposition apparatus according to claim 1, wherein the holder is rotatable and includes a substrate heating means. 제1항에 있어서, 상기 압력 조절 수단은 상기 챔버에 연결된 진공 라인과, 상기 진공 라인 중에 설치되어 챔버 내의 압력을 일정하게 유지되도록 하는 트로팅 밸브와, 상기 진공 라인의 불순물을 거르는 트랩과, 상기 챔버 내의 압력을 조절하는 펌프와, 상기 챔버의 압력을 측정하는 이온 게이지로 구성되는 것을 특징으로 하는 박막 증착 장치.2. The apparatus of claim 1, wherein the pressure regulating means comprises: a vacuum line connected to the chamber; a trotting valve installed in the vacuum line to maintain a constant pressure in the chamber; a trap for filtering impurities of the vacuum line; A pump for controlling the pressure in the chamber, and an ion gauge for measuring the pressure of the chamber. 기판 상에 화학 화합물의 박막을 증착하는 방법에 있어서, 하나 또는 그 이상의 화학 원소를 갖는 전구체 용액을 준비하는 단계; 밀폐된 챔버 내에 기판을 준비하고, 상기 챔버를 소정의 압력으로 유지하는 단계; 상기 전구체 용액을 조절된 유속으로 액적 분무 장치로 이송하는 단계; 상기 이송된 전구체 용액을 일정한 온도로 유지하는 단계; 상기 액정 분무 장치에서 상기 이송된 전구체 용액을 액적으로 변환시키는 단계; 상기 액정을 상기 챔버 내로 주입시켜 상기 기판 상에 액적을 증착시키는 단계; 및 상기 증착된 액적을 가열 건조시켜 상기 기판 상에 박막을 형성하는 단계로 이루어지는 것을 특징으로 하는 박막 증착 방법.A method of depositing a thin film of a chemical compound on a substrate, comprising: preparing a precursor solution having one or more chemical elements; Preparing a substrate in a closed chamber and maintaining the chamber at a predetermined pressure; Transferring the precursor solution to the droplet sprayer at a controlled flow rate; Maintaining the transferred precursor solution at a constant temperature; Converting the transferred precursor solution into droplets in the liquid crystal spraying apparatus; Injecting the liquid crystal into the chamber to deposit droplets on the substrate; And heating and drying the deposited droplet to form a thin film on the substrate. 제10항에 있어서, 상기 챔버의 압력을 200~700Torr로 조절하는 것을 특징으로 하는 박막 증착 방법.11. The method of claim 10, wherein the pressure of the chamber is adjusted to 200 to 700 Torr. 제10항에 있어서, 상기 기판 상에 액적을 주입하는 단계에서 상기 기판을 회전시키는 것을 특징으로 하는 박막 증착 방법.The thin film deposition method of claim 10, wherein the substrate is rotated in a step of injecting droplets onto the substrate. 제10항에 있어서, 상기 박막을 형성하는 단계 후에 상기 박막을 열처리하는 단계를 포함하는 것을 특징으로 하는 박막 증착 방법.The method of claim 10, further comprising heat treating the thin film after forming the thin film. 제13항에 있어서, 상기 열처리는 550~850°C의 가열로에서 수행하는 것을 특징으로 하는 박막 증착 방법.14. The method of claim 13, wherein the heat treatment is performed in a heating furnace at 550 to 850 ° C. 제10항에 있어서, 상기 박막은 강유전체 막 또는 초전도 박막인 것을 특징으로 하는 박막 증착 방법.The method of claim 10, wherein the thin film is a ferroelectric thin film or a superconducting thin film. 제15항에 있어서, 상기 강유전체 막은 PbTiO3, Pb(Ti,Zr)O3, (Pb, La)TiO3, (Pb,La)(TiZr)O3, BaTiO3, SrTiO3, (Ba, Sr)TiO3, BiSr2Ta2O9및 BiSr2Nb2O9중에서 선택된 어느 하나인 것을 특징으로 하는 박막 증착 방법.The ferroelectric film according to claim 15, wherein the ferroelectric film is made of at least one selected from the group consisting of PbTiO 3 , Pb (Ti, Zr) O 3 , (Pb, La) TiO 3 , (Pb, La) (TiZr) O 3 , BaTiO 3 , SrTiO 3 , ) TiO 3 , BiSr 2 Ta 2 O 9, and BiSr 2 Nb 2 O 9 . 제15항에 있어서, 상기 초전도 박막은 YBa2Cu3O7-x인 것을 특징으로 하는 박막 증착 방법.The method of claim 15, wherein said superconducting thin film is a thin film forming method, characterized in that YBa 2 Cu 3 O 7-x . 전구체 용액을 액적 화학 증착법에 의해 기판 상에 바리움-스트론티움-티타네이트 박막을 형성하는 방법에 있어서, 상기 전구체 용액은 바리움과 스트론티움에 해당하는 유기 금속 용질들을 각각 상기 유기 금속 용질들과 작용기가 동일한 유기 용매들에 혼합하여 유기 금속 용액을 형성하는 단계와, 상기 유기 금속 용액에 티타늄 알콕사이트 화합물을 혼합하는 단계로 이루어지는 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.A method of forming a thin film of a barium-strontium titanate on a substrate by a droplet chemical vapor deposition method, wherein the precursor solution comprises an organometallic solute corresponding to barium and strontium, Wherein the functional group is mixed with the same organic solvents to form an organic metal solution; and mixing the organometallic solution with a titanium alkoxide compound to form a thin film of a barium-strontium titanate thin film. 제18항에 있어서, 상기 티타늄 알콕사이드 화합물은 Ti(OC2H7)4, Ti(OC3H7)4, Ti(OC4H9)4, Ti(OC5H11)4및 Ti(OCH3OC2H5)4중에서 선택된 어느 하나인 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.19. The method of claim 18, wherein the titanium alkoxide is Ti (OC 2 H 7) 4 , Ti (OC 3 H 7) 4, Ti (OC 4 H 9) 4, Ti (OC 5 H 11) 4 and Ti (OCH 3 OC 2 H 5 ) 4. The method of forming a thin film of barium-strontium titanate according to claim 1, 제18항에 있어서, 상기 유기 용매들은 아세트산 및 2-메톡시 에탄올인 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.19. The method of claim 18, wherein the organic solvents are acetic acid and 2-methoxyethanol. 제18항에 있어서, 상기 유기 용매들은 아세트산 및 아세틸 아세톤인 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.19. The method of claim 18, wherein the organic solvents are acetic acid and acetylacetone. 제18항에 있어서, 상기 유기 금속 용액을 형성하는 단계 후에 탄소 수가 큰 유기 용매로 희석하는 단계를 더 구비하는 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.19. The method of claim 18, further comprising diluting the organic metal solution with an organic solvent having a large carbon number after forming the organic metal solution. 제22항에 있어서, 상기 탄소 수가 큰 유기 용매는 2-메칠 에탄올, 벤젠, 1-부탄올 및 1-프로판올중에서 선택된 어느 하나인 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.23. The method of claim 22, wherein the organic solvent having a high carbon number is any one selected from 2-methyl ethanol, benzene, 1-butanol, and 1-propanol. 제18항에 있어서, 상기 티타늄 알콕사이드 화합뭉의 혼합시 또는 혼합 후에 유기 금속 용질의 반응을 촉진시키기 위해 부가제를 첨가하는 단계를 더 구비하는 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.19. The method of claim 18, further comprising adding an additive to promote the reaction of the organic metal solute during or after the mixing of the titanium alkoxide compounded mixture. Way. 제24항에 있어서, 상기 부가제는 DMF나 에칠렌 글리콜을 이용하는 것을 특징으로 하는 바리움-스트론티움-티타네이트 박막 형성 방법.25. The method of claim 24, wherein the additive is DMF or ethylene glycol. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
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KR20020019753A (en) * 2000-09-07 2002-03-13 이희영 The method of synthesis of SNTO and LTO precursor solutions for making thin films for non-volatile memory device applications
KR100899609B1 (en) * 2000-12-28 2009-05-27 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus and substrate processing method
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