KR100805930B1 - A precursor vapor pressure measuring device for semiconductor manufacturing process and method thereof - Google Patents

Abstract

An apparatus and method of measuring vapor pressure of a precursor in a semiconductor manufacturing process is provided to measure the vapor pressure accurately by reducing pressure variation due to precursor deposition and degasification. A precursor sample is contained in a sample container(100), and a pressure detector(300) is connected to the sample container via a tube. A main pumping unit has a valve and a constant pressure maintaining chamber(200) in which the vaporized sample flows in the pressure detector. A sensor(110) is attached to the sample container to monitor a decomposing state of the sample during a measuring process. A purge gas and sensor controller(820) checks the decomposing state of the precursor based on the signal of the sensor. The sample container and the pressure detector are disposed in an adiabatic partition(600) in a sealing manner.

Description

Precursor Vapor Pressure Measuring Device For Semiconductor Manufacturing Process and Method Thereof}

1 is a block diagram of a precursor vapor pressure measuring apparatus for a semiconductor manufacturing process according to the present invention,

FIG. 2 is a flowchart of a method of measuring vapor pressure of a precursor using the measuring device shown in FIG. 1.

Explanation of symbols on main parts of drawing

100: sample container, 110: sensor, 200: isostatic chamber,

300: pressure measuring unit, 400: auxiliary pumping unit, 410: auxiliary pump,

420: auxiliary valve, 500: main control unit, 600: adiabatic bulkhead,

710: first valve, 720: second valve, 800: pollutant removal unit,

810: main pump, 820: purge gas and sensor control,

830: installation valve,

The present invention relates to an apparatus and a method for measuring the vapor pressure of the precursor used in the chemical vapor deposition method, and more particularly, an isostatic pressure holding chamber and a pressure measuring unit are installed in an inner chamber separated by an insulating partition wall to control the deposition and degassing of the precursor sample. A precursor vapor pressure measuring apparatus and method for a semiconductor manufacturing process comprising a structure.

In general, precursors are used in chemical vapor deposition for semiconductor manufacturing processes. Even if these precursors are the same material, different behaviors appear in the deposition process depending on the conditions.

In particular, even if the same precursor compound, the vapor pressure is different depending on the conditions, in this case, even if a certain raw material is introduced, the quality difference may occur in the deposited thin film.

However, in such a semiconductor manufacturing process, when the integration of the device is increased, such a structure becomes very complicated, such as forming a three-dimensional wiring structure, and thus requires a better quality of the thin film.

In addition, the quality of the thin film affects subsequent exposure and wiring processes. When the quality of the thin film is degraded, the quality of the thin film may be reduced, as well as a decrease in production yield and an increase in production cost.

Therefore, there is a need for a technique for improving the qualitative properties of the thin film. For this purpose, the vapor pressure of the precursors having different vapor pressure differences must be accurately measured before the chemical vapor deposition.

However, most of the precursors are flammable when exposed to air, and are difficult to handle, and equipment is often contaminated by reaction by-products. Therefore, there is a problem that the apparatus and method for measuring the vapor pressure of the precursor easily before the chemical vapor deposition using the precursor.

Accordingly, in the industry in which vacuum technology and thin film deposition process are used, such as semiconductor and display manufacturing process, there is no construction of thermodynamic basic data of the precursor, and in particular, there is no problem in measurement data regarding vapor pressure.

The present invention has been made in view of the conventional problems as described above, the first object of the present invention, isothermal pressure holding chamber to control / prevent degassing during the precipitation and flow process according to the temperature change by maintaining constant temperature and isostatic pressure It is to provide a precursor vapor pressure measuring device for a semiconductor manufacturing process comprising a structure installed between the sample vessel and the pressure measuring unit and sealed / placed in the inner chamber of the constant-temperature partition wall.

The second object of the present invention is to measure the precursor vapor pressure for a semiconductor manufacturing process including a structure for controlling a precursor exhaust after the measurement by connecting a separate pump and a purge control structure to the site where the measurement is made to remove the pollutant. To provide a device.

As a means for achieving the above object,

The present invention is a sample container containing a precursor sample; A pressure measuring unit connected to the sample container; A main pumping part configured to include a valve and an isostatic pressure holding chamber so that the sample can be evaporated and introduced into the pressure measuring part, and connected to an isostatic pressure holding chamber for basic vacuum holding and removal of contaminants; And a sensor attached to the sample container for monitoring the decomposition state of the sample during the measurement process; A purge gas and a sensor controller for checking the decomposition state of the precursor based on the sensing signal of the sensor and instructing to stop the operation of the main pump when the decomposition state reaches a predetermined threshold value or more; The sample container and the pressure measuring unit are sealed / arranged in an inner chamber of the heat insulating partition wall so that the constant temperature of the sample is maintained regardless of the flow position.

In addition, in order to remove the contaminant remaining after the measurement of the sample, the pipe is connected to the isostatic pressure holding chamber to be connected to the isostatic pressure holding chamber to pump the pollutant, and is operated in accordance with the control command of the purge gas and the sensor controller. The pump is further included.

In addition, the pressure measuring unit and the isostatic pressure holding chamber is characterized in that it further comprises an auxiliary pump consisting of an auxiliary pump and an auxiliary valve.

In addition, the sensor, precursor vapor pressure measuring apparatus for a semiconductor manufacturing process, characterized in that any one selected from the ultrasonic sensing structure, ultraviolet sensing structure, infrared sensing structure.

In addition, a method for realizing the present invention includes the steps of opening both the first valve and the second valve connected to the isostatic holding chamber, and operating the main pump to generate a maximum basic pressure (S1000); Commanding to close the first valve and waiting for a predetermined time such that the pressure is unchanged (S2000); After waiting until the vapor pressure of the precursor becomes parallel and the step of measuring the saturated steam pressure at this time in the pressure measuring unit (S3000); After the measurement, it is characterized in that the step of removing the contamination source around the pressure measuring unit by removing the contamination source in the pipe connection by driving the installation valve, and if necessary, the auxiliary pump and the auxiliary valve (S4000).

Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description and the preferred embodiments associated with the accompanying drawings.

Hereinafter, a precursor vapor pressure measuring apparatus for a semiconductor manufacturing process according to the present invention will be described with reference to the accompanying drawings.

1 is a block diagram of a precursor vapor pressure measuring apparatus for a semiconductor manufacturing process according to the present invention. As shown in Figure 1, the vapor pressure measuring apparatus according to the present invention, the sample vessel 100 and the pressure measuring unit 300 to control the deposition and degassing according to the temperature change by maintaining a constant temperature and isostatic pressure insulation barrier rib ( It is sealed in the inner chamber of 600, and includes a structure in which the isostatic holding chamber 200 is connected between the sample container 100 and the pressure measuring unit 300.

In the vapor pressure measuring device, the isostatic pressure holding chamber 200 is disposed in a round shape in the middle. The pressure measuring part 300 is connected to the right side of the isostatic pressure holding chamber 200, and the sample container 100 is connected to the pipe through the second valve 720. The sensor 110 is installed at the side of the sample container 100.

Here, the sample container 100 contains a precursor which is a target of pressure measurement, and is connected to the isostatic pressure holding chamber 200 and the pressure measuring unit 300 through a pipe connection.

In the isostatic pressure holding chamber 200, the pressure changes with time due to the minute degassing of the precursor generated when the first valve 710 and the second valve 720 are opened and the sample is discharged through the pipe connection part. It is to prevent the occurrence of the structure having a relatively large volume compared to the pipe of a constant diameter.

Therefore, when a change such as a pressure drop occurs due to the slight degassing of the precursor, the volume of the isostatic holding chamber 200, that is, the volume containing the precursor is relatively large, so that the shortage due to the minute degassing is compensated for, thereby preventing the overall pressure change from occurring. A structure can be provided.

As such, when both the first valve 710 and the second valve 720 are opened, the sample comes out from the sample container 100.

The auxiliary pumping unit 400 is composed of an auxiliary pump 410 and an auxiliary valve 420 so that the sample is pumped from the sample container 100 and discharged more smoothly. Accordingly, the pumping force of the auxiliary pump 410 forcibly facilitates the discharge of the pollutant in the device, and the opening of the auxiliary valve 420 provides a structure in which residual pollutants such as the inner wall of the pipe can be discharged smoothly after the experiment. Can be. That is, only the pollutant removing unit 800 assists in removing the contaminating particles in the isostatic holding chamber 200 or the pressure measuring unit 300 that are difficult to remove.

Here, the main components such as the sample container 100, the first valve 710, the second valve 720, the isostatic pressure holding chamber 200, the pressure measuring unit 300, and the like, are located in the inner chamber of the adiabatic bulkhead 600. As a result of the sealing / installation, a constant temperature of the sample flowing through the pipe connection portion is maintained, thereby providing a structure in which precipitation of the sample can be controlled / prevented.

Also attached to the side of the sample container 100 is a sensor 110 that takes one of an ultrasonic sensing structure, an infrared sensing structure, and an ultraviolet sensing structure, and is electrically connected to a control unit to decompose the precursor contained in the sample container 100. Since the decomposition of the precursor causes a measurement error, the attachment structure of the sensor 110 provides a structure for sensing and monitoring the decomposition degree of the precursor.

As such, the signal sensed by the sensor 110 is immediately transmitted to the purge gas and the sensor control unit 820 so that the purge gas and the sensor control unit 820 check the decomposition state of the precursor on the basis of the sensing signal to determine the decomposition state over a predetermined reference value. You can also give a command to stop the measurement when it is reached.

On the other hand, to the left side of the isostatic pressure holding chamber 200, the contaminant removing unit 800 is connected to the first valve 710 side. The pollutant removing unit 800 is provided to prevent the precursor remaining in the pipe connection part and the pressure measuring unit 300 after the measurement acts as a pollutant.

The pollutant removing unit 800 is a main pump 810 connected to the isostatic holding chamber 200 by passing through the adiabatic bulkhead 600, and an auxiliary valve 830 connected to the vicinity of the main pump 810. And a purge gas and a sensor controller 820.

The purge gas and sensor control unit 820 receives the signal according to the end of the measurement to instruct the operation of the installation valve 830, the precursor remaining in the pipe connection after the measurement in accordance with the role of the pollutant removal unit 800 Can be prevented from functioning as a pollution source.

For reference, purge pipes and plant facilities are stopped for reasons such as abnormal situations or maintenance, and the remaining residues are transported and released to other facilities by oxidizing or reacting. Neutralization should be performed with a stable gas so as not to cause toxic gas.In this case, neutralizing the contents of equipment or vessels with a gas that does not cause chemical or physical reactions is called inactivation or purge. It is called (Purge Gas).

In the present invention, the precursors for semiconductors are removed using a purge apparatus, which is a source removal unit 800, to remove the pollutant existing on the inner wall of the system. The installation valve 830 is driven under the control of the purge gas and the sensor controller 820. After the inert gas flows into the system, the supply time and frequency of the inert gas are adjusted to remove the contaminant in the measuring system.

FIG. 2 is a flowchart of a method of measuring vapor pressure of a precursor using the measuring device shown in FIG. 1. As shown in Figure 2, using the vapor pressure measuring apparatus according to the present invention, it is possible to measure the vapor pressure of the precursor sample in the following manner.

First, open the first valve 710 and the second valve 720 connected to the isostatic pressure holding chamber 200 through the command of the main control unit 500, and operate the main pump 810 to generate the maximum basic pressure. Step. (S1000)

And commanding to close the first valve 710 to wait for a predetermined time to be in an isostatic state without a change in pressure. (S2000)

Thereafter, after the vapor pressure of the precursor is in equilibrium, the second valve 720 is opened to output the vapor of the sample, and the saturated steam pressure at this time is measured by the pressure measuring unit 300. (S3000)

After the measurement, drive the laying valve 830 to remove contaminants in the pipe connection part, and if necessary, open the auxiliary valve 420 and operate the auxiliary pump 410 to remove the contaminant around the pressure measuring part. S4000)

According to the operation method of the measuring device according to the present invention, the vapor pressure of the precursor sample may be measured, and in addition, the contamination source may be removed after the measurement.

In the precursor vapor pressure measuring apparatus for a semiconductor manufacturing process according to the present invention described above, a structure that allows the operator to recognize by sending a warning alarm to the sound or lamp lights, etc. based on the transmission signal sent from the sensor 110 Can be included.

According to the precursor vapor pressure measuring apparatus for a semiconductor manufacturing process according to the present invention as described above, by reducing the possibility of the pressure change due to the precursor precipitation and the micro-degassing of the precursor according to the temperature change, it is possible to measure the more accurate vapor pressure have. Accordingly, the thermodynamic data related to the vapor pressure obtained / constructed may play a role in being usefully used in a semiconductor manufacturing process using chemical vapor deposition.

In addition, it is possible to reduce the error range even by repeatedly measuring by removing the source of contamination, and also has the effect of monitoring the decomposition state of the precursor.

Although the present invention has been described in connection with the above-mentioned preferred embodiments, various other modifications and variations may be made without departing from the spirit and scope of the invention. Accordingly, it is intended that the appended claims cover such modifications and variations as fall within the true scope of the invention.

Claims (5)

A sample container containing a precursor sample; A pressure measuring unit connected to the sample container; A main pumping part configured of a valve and an isostatic holding chamber so that the sample can be evaporated and introduced into the pressure measuring unit, and connected to an isostatic holding chamber for basic vacuum holding and removal of contaminants; And a sensor attached to the sample container for monitoring the decomposition state of the sample during the measurement process; A purge gas and a sensor controller for checking the decomposition state of the precursor based on the sensing signal of the sensor and instructing to stop the operation of the main pump when the decomposition state reaches a predetermined threshold value or more; The sample vessel and the pressure measuring unit, the precursor vapor pressure measuring device for a semiconductor manufacturing process, characterized in that the sealing / arranged in the inner chamber of the insulating partition wall so that the constant temperature of the sample is maintained regardless of the flow position. The method of claim 1, For removal of contaminants remaining after measurement of the sample And a laying pump connected to the isostatic pressure holding chamber and connected to the isostatic pressure holding chamber to pump the pollutant and operated according to a control command of a purge gas and a sensor controller. Precursor vapor pressure measuring device. The method of claim 1, Precursor vapor pressure measuring device for a semiconductor manufacturing process, characterized in that further comprising an auxiliary pumping portion consisting of an auxiliary pump and an auxiliary valve between the pressure measuring unit and the isostatic holding chamber. The method of claim 1, The sensor is a precursor vapor pressure measuring device for a semiconductor manufacturing process, characterized in that any one selected from ultrasonic sensing structure, ultraviolet sensing structure, infrared sensing structure. Opening both the first valve and the second valve connected to the isostatic holding chamber, and operating the main pump to generate a maximum basic pressure (S1000); Commanding to close the first valve and waiting for a predetermined time such that the pressure is unchanged (S2000); Thereafter, after the vapor pressure of the precursor is in equilibrium, the second valve is opened to output steam of the sample, and the saturated steam pressure at this time is measured by the pressure measuring unit 300. (S3000) After the measurement, the semiconductor manufacturing process comprising the step of removing the pollutant in the pipe connection by driving the auxiliary valve, and if necessary open the auxiliary pump and the auxiliary valve to remove the pollutant around the pressure measuring unit (S4000) Precursor vapor pressure measurement method.

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