KR970054381A - Transistor manufacturing method of semiconductor device - Google Patents

Transistor manufacturing method of semiconductor device Download PDF

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Publication number
KR970054381A
KR970054381A KR1019950050481A KR19950050481A KR970054381A KR 970054381 A KR970054381 A KR 970054381A KR 1019950050481 A KR1019950050481 A KR 1019950050481A KR 19950050481 A KR19950050481 A KR 19950050481A KR 970054381 A KR970054381 A KR 970054381A
Authority
KR
South Korea
Prior art keywords
forming
spacer
oxide film
film
transistor
Prior art date
Application number
KR1019950050481A
Other languages
Korean (ko)
Inventor
안회균
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050481A priority Critical patent/KR970054381A/en
Publication of KR970054381A publication Critical patent/KR970054381A/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 반소체 소자의 트랜지스터 제조방법에 관한 것으로서, LDD 구조의 게이트 전극 측벽에 형성되는 스페이서 형성시 종래의 TEOS 대신 폴리실리콘을 산화시켜 형성된 열산화막을 사용함으로써 종래의 TEOS를 사용할 경우 발생되는 구조상의 결점인 댕글링 본드(Dangling bond)로 인하여 드레인의 n+에 의해 스페이서에 전자기 트랩(trap) 될 수 있고, 이는 다시 n-를 고갈시켜 저항을 크게 하여 소자의 수명을 단축시키게 되고, 또한 이와 같은 현상을 방지하기 위하여 n-이온 주입후 다시 얇게 이온주입을 하게 추가 공정이 삽입되어 공정상의 효율을 저하시키게 되는 문제점을 해결하여 소자의 신뢰성 및 수명을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semi-elementary device, wherein a thermal oxide film formed by oxidizing polysilicon instead of TEOS is used to form a spacer formed on a gate electrode sidewall of an LDD structure. Due to dangling bond, which is a defect of, it can be trapped in the spacer by n + of drain, which in turn depletes n - to increase resistance and shorten device life. In order to prevent the same phenomenon, an additional process is inserted to make the ion implantation thin again after n − ion implantation, thereby reducing the process efficiency and improving the reliability and lifespan of the device.

Description

반도체 소자의 트랜지스터 제조방법Transistor manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제4도는 본 발명에 따른 반도체 소자의 트랜지스터 제조공정단계를 도시한 단면도.1 to 4 are cross-sectional views showing a transistor manufacturing process step of a semiconductor device according to the present invention.

Claims (2)

반도체 기판상에 게이트 산화막을 형성하는 공정과, 상기 게이트 산화막상에 다결정실리콘층 패턴으로 된 일련의 게이트 전극을 형성하는 공정과, 전체 구조 상부에 스체이서 형성막을 형성하는 공정과, 상기 스페이서 형성막을 포토 마스크를 이용 식각하여 상기 게이트 전극의 양측에 스페이서를 형성하는 공정과, 상기 스페이서에 의해 노출되어 있는 게이트 전극 양측의 반도체 기판에 이온주입하여 소오스/드레인 전극을 형성하는 공정을 구비하는 반도체 소자의 트랜지스터 제조방법에 있어서, 상기 스페이서 형성막으로 열산화막을 사용하는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.Forming a gate oxide film on the semiconductor substrate, forming a series of gate electrodes having a polysilicon layer pattern on the gate oxide film, forming a chaser forming film on the entire structure, and forming the spacer forming film. Forming a spacer on both sides of the gate electrode by etching using a photo mask; and forming a source / drain electrode by ion implanting the semiconductor substrate on both sides of the gate electrode exposed by the spacer. A transistor manufacturing method of a transistor, wherein a thermal oxide film is used as the spacer forming film. 제1항에 있어서, 상기 열산화막은 폴리실리콘을 산화시켜 형성된 산화막인 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.The method of claim 1, wherein the thermal oxide film is an oxide film formed by oxidizing polysilicon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050481A 1995-12-15 1995-12-15 Transistor manufacturing method of semiconductor device KR970054381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050481A KR970054381A (en) 1995-12-15 1995-12-15 Transistor manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050481A KR970054381A (en) 1995-12-15 1995-12-15 Transistor manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970054381A true KR970054381A (en) 1997-07-31

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ID=66595024

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950050481A KR970054381A (en) 1995-12-15 1995-12-15 Transistor manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970054381A (en)

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