KR970053809A - Semiconductor device having wide voltage operating characteristics - Google Patents

Semiconductor device having wide voltage operating characteristics Download PDF

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Publication number
KR970053809A
KR970053809A KR1019950048344A KR19950048344A KR970053809A KR 970053809 A KR970053809 A KR 970053809A KR 1019950048344 A KR1019950048344 A KR 1019950048344A KR 19950048344 A KR19950048344 A KR 19950048344A KR 970053809 A KR970053809 A KR 970053809A
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KR
South Korea
Prior art keywords
power supply
semiconductor device
level
supply voltage
pull
Prior art date
Application number
KR1019950048344A
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Korean (ko)
Other versions
KR100197557B1 (en
Inventor
박철성
전병길
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950048344A priority Critical patent/KR100197557B1/en
Publication of KR970053809A publication Critical patent/KR970053809A/en
Application granted granted Critical
Publication of KR100197557B1 publication Critical patent/KR100197557B1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)

Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 장치Semiconductor devices

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

전원전압의 사양에 관계없이 동일한 마스크에 의한 제조공정으로 반도체 장치를 제조할 수 있는 광역 전압동작 특성을 가지는 반도체 장치를 제공함에 있다.A semiconductor device having a wide-range voltage operation characteristic capable of manufacturing a semiconductor device by a manufacturing process using the same mask regardless of a power supply voltage specification is provided.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

인가되는 전원전압의 레벨을 검출하여 각기 다른 레벨의 신호를 출력하는 외부전원 감지회로들을 구비한 개선된 반도체 장치는 상기 외부전원 감지회로들의 서로 다른 출력신호들에 응답하여 상기 전원전압의 레벨변동시 상기 반도체 장치의 풀없 및 풀 다운 전류 구동능력을 그에 따라 조절하는 수단을 포함한다.An improved semiconductor device having external power supply sensing circuits that detect a level of the applied power supply voltage and output a signal having a different level, may be configured to change the level of the power supply voltage in response to different output signals of the external power supply sensing circuits. Means for adjusting the pull-free and pull-down current driving capability of the semiconductor device accordingly.

4. 발명의 중요한 용도4. Important uses of the invention

반도체 장치에 사용된다.Used in semiconductor devices.

※ 선택도 : 제1도※ Selectivity: 1st

Description

광역 전압동작 특성을 가지는 반도체 장치Semiconductor device having wide voltage operating characteristics

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 일 실시예의 따른 버퍼 라인 드라이버의 회로도.2 is a circuit diagram of a buffer line driver according to an embodiment of the present invention.

Claims (4)

인가되는 전원전압의 레벨을 검출하여 각기 다른 레벨의 신호를 출력하는 외부전원 감지회로들을 구비한 반도체 장치에 있어서, 상기 외부전원 감지회로들이 서로 다른 출력신호들에 응답하여 상기 전원전압의 레벨변동시 상기 반도체 장치의 풀업 및 풀 다운 전류 구동능력을 그에 따라 조절하는 수단을 가짐을 특징으로 하는 반도체 장치.A semiconductor device having external power detection circuits for detecting a level of an applied power supply voltage and outputting a signal having a different level, wherein the external power supply detection circuits change the level of the power supply voltage in response to different output signals. And means for adjusting the pull-up and pull-down current driving capabilities of the semiconductor device accordingly. 제1항에 있어서, 상기 조절수단은 피 모오스 또는 엔 모오스 트랜지스터들로 이루어진 전류 소오스임을 특징으로 하는 반도체 장치.The semiconductor device according to claim 1, wherein said adjusting means is a current source made of PMOS or enMOS transistors. 반도체 장치에 있어서, 각각 다른 전원 전압사이에 공통으로 적용시키기 위해 저전압에서부터 고전압에 이르기까지 차례로 동작하는 전류 소오스를 전원전압 감지회로와 상기 장치간에 연결하여 구성된 것을 특징으로 하는 반도체 장치.A semiconductor device, comprising: a current source operating in sequence from a low voltage to a high voltage in order to be commonly applied between different power supply voltages, by being connected between a power supply voltage sensing circuit and the device. 반도체 장치의 입력 버퍼에 있어서, 인가되는 전원전압의 레벨을 검출하여 각기 다른 레벨의 신호를 출력하는 외부전원 감지회로들의 상기 서로 다른 출력 신호들에 응답하여, 상기 전원전압의 레벨변동시 상기 입력버퍼의 풀업 및 풀 다운 전류 구동능력을 그에 따라 조절하는 피 및 엔 모오스 트랜지스터로 이루어진 전류 소오스를 상기 입력 버퍼의 초단 인버터에 연결한 구성을 가짐을 특징으로 하는 입력버퍼.In the input buffer of the semiconductor device, in response to the different output signals of the external power detection circuits for detecting the level of the power supply voltage applied to the output signal of different levels, the input buffer when the level of the power supply voltage changes And a current source consisting of a P and N-MOS transistor for adjusting the pull-up and pull-down current driving capability of the input buffer to the first stage inverter of the input buffer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950048344A 1995-12-11 1995-12-11 Semiconductor device having wide-area voltage action property KR100197557B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950048344A KR100197557B1 (en) 1995-12-11 1995-12-11 Semiconductor device having wide-area voltage action property

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950048344A KR100197557B1 (en) 1995-12-11 1995-12-11 Semiconductor device having wide-area voltage action property

Publications (2)

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KR970053809A true KR970053809A (en) 1997-07-31
KR100197557B1 KR100197557B1 (en) 1999-06-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150101646A (en) * 2014-02-27 2015-09-04 에스케이하이닉스 주식회사 Driver and image sensing device with the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150101646A (en) * 2014-02-27 2015-09-04 에스케이하이닉스 주식회사 Driver and image sensing device with the same

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Publication number Publication date
KR100197557B1 (en) 1999-06-15

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