KR970052987A

KR970052987A - Well Formation Method of Semiconductor Device

Info

Publication number: KR970052987A
Application number: KR1019950059486A
Authority: KR
Inventors: 염선해; 김재홍
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-12-27
Filing date: 1995-12-27
Publication date: 1997-07-29

Abstract

본 발명은 반도체장치의 웰 형성방법에 관해 개시한다. 본 발명에 의한 웰 형성방법은 반도체기판 상에 얇은 산화막을 성장시키고 그 전면에 나이트라이드막을 형성하여 웰 형성영역을 한정하는 단계를 포함하는 웰 형성 방법에 있어서, 상기 나이트라인드막을 사용하는 대신 상기 반도체기판 상에 산화막을 두껍게 형성하는 단계, 상기 산화막 전면에 제1도전형 불순물을 이온 주입하는 단계, 상기 산화막의 일부분을 한정하여 일정두께를 식각하는 단계, 상기 한정된 부분에 제2도전형 불순물을 이온 주입하는 단계 및 상기 산화막을 제거하는 단계를 포함한다.The present invention discloses a method for forming a well of a semiconductor device. The well forming method according to the present invention comprises the steps of growing a thin oxide film on a semiconductor substrate and forming a nitride film on its entire surface to define a well forming region, wherein the well film is used instead of the nitride film. Forming a thick oxide film on the semiconductor substrate, ion implanting a first conductive impurity into the entire surface of the oxide film, etching a predetermined thickness by defining a portion of the oxide film, and depositing a second conductive impurity in the limited portion Implanting the ion and removing the oxide film.

본 발명에 의한 웰 형성방법은 종래의 기술에 비해 웰 형성단계와 형성시간을 줄일 수 있으므로 반도체장치의 생산성을 높일 수 있다.The well forming method according to the present invention can reduce the well forming step and the forming time as compared with the prior art, thereby increasing the productivity of the semiconductor device.

Description

Well Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제7도는 본 발명에 의한 웰 형성공정을 단계별로 나타낸 도면들이다.7 is a view showing step by step the well forming process according to the present invention.

Claims

A well forming method comprising growing a thin oxide film on a semiconductor substrate and forming a nitride film on its entire surface to define a well forming region, wherein a thick oxide film is formed on the semiconductor substrate instead of using the nitride film. Making; Ion implanting a first conductive impurity onto the entire surface of the oxide film; Etching a predetermined thickness by defining a portion of the oxide film; Ion implanting a second conductivity type impurity into the defined portion; And removing the oxide film.

2. The method of forming a well of a semiconductor device according to claim 1, wherein conductive impurities of opposite types are used as the first and second conductive impurities.

The method of forming a well of a semiconductor device according to claim 1, wherein the first conductive impurity is formed of any one selected from P and N-type conductive impurities.

※ Note: The disclosure is based on the initial application.