KR970052924A - Method for forming conductive wiring in semiconductor device - Google Patents
Method for forming conductive wiring in semiconductor device Download PDFInfo
- Publication number
- KR970052924A KR970052924A KR1019950046984A KR19950046984A KR970052924A KR 970052924 A KR970052924 A KR 970052924A KR 1019950046984 A KR1019950046984 A KR 1019950046984A KR 19950046984 A KR19950046984 A KR 19950046984A KR 970052924 A KR970052924 A KR 970052924A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive wiring
- polycrystalline silicon
- silicon film
- forming
- undoped
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 도전배선 형성방법에 관한 것으로, 반도체기판 상부에 소정두께 도프된 다결정실리콘막, 도프안된 다결정실리콘막 및 DCS 텅스텐 실리사이드를 순차적으로 형성하고 도전배선마스크를 이용한 식각공정으로 상기 DCS 텅스텐 실리사이드, 도프안된 다결정실리콘막 및 도프된 다결정실리콘막을 순차적으로 식각한 다음, 후속 열공정을 실시하여 불순물을 활성화시킴으로써 상기 도프안된 다결정실리콘막에 도핑시켜 하부 도전배선층과 텅스텐 실리사이드로 형성되어 소자의 특성 및 신뢰성이 향상된 도전배선을 형성함으로써 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체 소자의 고집적화를 가능하게 하는 기술이다.The present invention relates to a method for forming a conductive wiring of a semiconductor device, and sequentially forming a predetermined thickness doped polysilicon film, an undoped polysilicon film, and a DCS tungsten silicide in an etch process using a conductive wiring mask. Tungsten silicide, undoped polysilicon film and doped polysilicon film are sequentially etched, and then a subsequent thermal process is performed to dope the undoped polycrystalline silicon film by activating impurities to form a lower conductive wiring layer and tungsten silicide to form the device. By forming a conductive wiring with improved characteristics and reliability, it is a technology that improves the characteristics and reliability of a semiconductor device and thereby enables high integration of the semiconductor device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1C도는 본 발명의 실시예에 따른 반도체 소자의 도전배선 형성공정을 도시한 단면도.1A to 1C are cross-sectional views showing a conductive wiring forming process of a semiconductor device according to an embodiment of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950046984A KR970052924A (en) | 1995-12-06 | 1995-12-06 | Method for forming conductive wiring in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950046984A KR970052924A (en) | 1995-12-06 | 1995-12-06 | Method for forming conductive wiring in semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052924A true KR970052924A (en) | 1997-07-29 |
Family
ID=66593603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950046984A KR970052924A (en) | 1995-12-06 | 1995-12-06 | Method for forming conductive wiring in semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052924A (en) |
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1995
- 1995-12-06 KR KR1019950046984A patent/KR970052924A/en not_active Application Discontinuation
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