KR970053511A - Method for manufacturing conductive wiring of semiconductor device - Google Patents

Method for manufacturing conductive wiring of semiconductor device Download PDF

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Publication number
KR970053511A
KR970053511A KR1019950046980A KR19950046980A KR970053511A KR 970053511 A KR970053511 A KR 970053511A KR 1019950046980 A KR1019950046980 A KR 1019950046980A KR 19950046980 A KR19950046980 A KR 19950046980A KR 970053511 A KR970053511 A KR 970053511A
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KR
South Korea
Prior art keywords
forming
tungsten silicide
tungsten
conductive wiring
layer
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Application number
KR1019950046980A
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Korean (ko)
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KR100341882B1 (en
Inventor
김현수
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019950046980A priority Critical patent/KR100341882B1/en
Publication of KR970053511A publication Critical patent/KR970053511A/en
Application granted granted Critical
Publication of KR100341882B1 publication Critical patent/KR100341882B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체소자의 도전배선 제조방법에 관한 것으로, 본 발명은 불순The present invention relates to a method for manufacturing a conductive wiring of a semiconductor device, the present invention is impurity

물을 함유한 폴리실리콘층을 형성하고, 상기 폴리실리콘층의 상부에 텅스텐실리사이드층을 형성하고, 상기 텅스텐실리사이드층의 상부에서 실리콘을 주입하여 폴리실리콘층과 텅스텐실리사이드층 계면의 실리콘/텅스텐 조성비를 2 이상으로 하므로써, 후속 열공정시 텅스텐실리사이드층이 들뜨거나, 하부층인 폴리실리콘층과 반응하는 문제점을 방지할 수 있다.Forming a polysilicon layer containing water, forming a tungsten silicide layer on top of the polysilicon layer, and injecting silicon from the top of the tungsten silicide layer to obtain a silicon / tungsten composition ratio between the polysilicon layer and the tungsten silicide layer interface. By setting it as 2 or more, it is possible to prevent the problem that the tungsten silicide layer is raised during the subsequent thermal process or reacts with the polysilicon layer which is the lower layer.

Description

반도체소자의 도전배선 제조방법Method for manufacturing conductive wiring of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C도는 본 발명의 실시예에 따른 반도체소자의 도선배선 제조 정도.1A to 1C are diagrams illustrating the manufacture of lead wires in a semiconductor device according to an embodiment of the present invention.

Claims (3)

반도체기판의 상부에 산화막을 형성하고, 상기 산화막의 상부에 불순물을 함유한 폴리실리콘층을 형성하는 단계와, 상기 전체 구조물 불산을 사용하여 세척하는 단계와, 상기 구조의 전 표면에 텅스텐 실리사이드층을 형성하는 단계와, 상기 전체 구조의 상부에서 실리콘이온을 주입하되, 상기 폴리실리콘층과 텅스텐실리사이드층 계면의 실리콘/텅스텐의 조성비를 증가시키는 단계와, 도전배선용 식각마스크를 이용하여 텅스텐실리사이드패턴과, 폴리실리콘패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체소자의 도전배선 제조방법.Forming an oxide film on the semiconductor substrate, forming a polysilicon layer containing impurities on the oxide film, washing using the entire structure of hydrofluoric acid, and forming a tungsten silicide layer on the entire surface of the structure Forming, implanting silicon ions on top of the entire structure, increasing the composition ratio of silicon / tungsten at the interface of the polysilicon layer and tungsten silicide layer, tungsten silicide pattern using an etching mask for conductive wiring, A method for manufacturing conductive wiring in a semiconductor device, comprising the step of forming a polysilicon pattern. 제1항에 있어서, 상기 텅스텐실리사이드층은 WF6와 SiH2Cl2가스를 사용하여 CVD 방법으로 형성하는 것을 특징으로 하는 반도체소자의 도전배선 제조방법.The method of claim 1, wherein the tungsten silicide layer is formed by a CVD method using WF 6 and SiH 2 Cl 2 gas. 제1항에 있어서, 상기 전체 구조의 상부에서 실리콘이온을 주입할 때, 상기 실리콘/텅스텐의 조성비를 2 이상으로 하는 것을 특징으로 하는 반도체소자의 도전배선 제조방법.The method of claim 1, wherein the composition ratio of silicon / tungsten is 2 or more when silicon ions are implanted from the upper portion of the entire structure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046980A 1995-12-06 1995-12-06 Method for fabricating conductive interconnection of semiconductor device KR100341882B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046980A KR100341882B1 (en) 1995-12-06 1995-12-06 Method for fabricating conductive interconnection of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046980A KR100341882B1 (en) 1995-12-06 1995-12-06 Method for fabricating conductive interconnection of semiconductor device

Publications (2)

Publication Number Publication Date
KR970053511A true KR970053511A (en) 1997-07-31
KR100341882B1 KR100341882B1 (en) 2002-11-07

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KR1019950046980A KR100341882B1 (en) 1995-12-06 1995-12-06 Method for fabricating conductive interconnection of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010008506A (en) * 1999-07-01 2001-02-05 김영환 Method for cleanig semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010008506A (en) * 1999-07-01 2001-02-05 김영환 Method for cleanig semiconductor device

Also Published As

Publication number Publication date
KR100341882B1 (en) 2002-11-07

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