KR970052859A - Method of manufacturing silicide semiconductor device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a silicide semiconductor device, and in particular, a gate oxide film is formed in an active region defined by a field oxide film on a silicon substrate, a gate electrode is formed thereon, and a low concentration impurity layer self-aligned to the gate electrode is formed in the silicon of the active region. Forming near the surface of the substrate; Stacking a nitride film and an oxide film on the resultant, performing anisotropic etching to form a spacer, and forming a highly doped impurity layer self-aligned to the spacer near the surface of the silicon substrate in the active region by an ion implantation process; Etching sequentially the nitride film and the gate oxide film on the high concentration impurity layer; After depositing a high melting point metal on the entire surface of the resultant, heat treatment to form a silicide by the silicon atoms on the surface of the semiconductor substrate and the silicon atoms on the upper surface of the polysilicon react with the high melting point metal to form silicide and not to be silicided in wet etching. It characterized in that it comprises a step of removing.

Therefore, in the present invention, by shortening the effective distance between the gate electrode and the source / drain, it is possible to prevent a short circuit due to silicidation.

Description

Method of manufacturing silicide semiconductor device.

As this is a public information case, the full text was not included.

2A to 2E are views showing a manufacturing procedure of a preferred embodiment of the silicide semiconductor device according to the present invention.

Claims (2)

Forming a gate oxide film in an active region defined by a field oxide film on the silicon substrate, forming a gate electrode thereon, and forming a low concentration impurity layer self-aligned to the gate electrode near the surface of the silicon substrate in the active region; Stacking a nitride film and an oxide film on the resultant, performing anisotropic etching to form a spacer, and forming a highly doped impurity layer near the surface of the silicon substrate in the active region by an ion implantation process; Etching sequentially the nitride film and the gate oxide film on the high concentration impurity layer; After depositing a high melting point metal on the entire surface of the resultant product, heat treatment is performed so that silicon atoms on the surface of the semiconductor substrate and the silicon atoms on the upper surface of the polysilicon react with the high melting point metal to form silicide, and do not suicide in wet etching. A method of manufacturing a silicide semiconductor device, comprising the step of removing a metal. Forming a gate oxide film in an active region defined by a field oxide film on the silicon substrate, forming a gate electrode thereon, and forming a low concentration impurity layer self-aligned to the gate electrode near the surface of the silicon substrate in the active region; Stacking a thick nitride film and an oxide film sequentially and anisotropically etching them to etch the oxide film so that the oxide film remains at a predetermined thickness only on the nitride film upper layer portion of the gate electrode and the peripheral edge of the gate electrode; Etching the exposed nitride film so that only a predetermined thickness remains; Further etching the oxide film left by the anisotropic etching until the nitride film of the gate electrode upper portion is visible to form a spacer; Etching the nitride film at a high selectivity with respect to the oxide film to remove the source / drain region together with the nitride film on the upper portion of the polysilicon gate electrode, thereby forming a recessed structure having a large step; And forming an impurity layer having a high concentration by ion implantation, depositing a high melting point metal, and then heat treating the silicon and the high melting point metal on the surface of the upper surface of the silicon and polysilicon to form a silicide. Characterized in that. ※ Note: The disclosure is based on the initial application.