KR970052412A - Method for manufacturing metal wiring in semiconductor device - Google Patents

Method for manufacturing metal wiring in semiconductor device Download PDF

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Publication number
KR970052412A
KR970052412A KR1019950061984A KR19950061984A KR970052412A KR 970052412 A KR970052412 A KR 970052412A KR 1019950061984 A KR1019950061984 A KR 1019950061984A KR 19950061984 A KR19950061984 A KR 19950061984A KR 970052412 A KR970052412 A KR 970052412A
Authority
KR
South Korea
Prior art keywords
metal wiring
semiconductor device
manufacturing
wiring
manufacturing metal
Prior art date
Application number
KR1019950061984A
Other languages
Korean (ko)
Inventor
심상철
김응수
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950061984A priority Critical patent/KR970052412A/en
Publication of KR970052412A publication Critical patent/KR970052412A/en

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Abstract

본 발명은 반도체 장치의 배선 구조 제조 방법에 관한 것으로서, 장벽 금속 상부의 자연 산화막을 제거하고 금속 배선을 하여 장벽 금속 간의 화합물 형성을 원활하게 하여 막 계면 구조를 안정되게 한다. 그럼으로써 금속 배선의 일렉트로 마이그레이션 신뢰성을 크게 향상하고, 컨택 홀 부위의 컨택 저항을 감소시켜 소자 특성을 개선하는 배선 구조의 제조 방법이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a wiring structure of a semiconductor device, wherein the natural oxide film on the barrier metal is removed and the metal wiring is performed to facilitate compound formation between the barrier metals, thereby making the film interface structure stable. Thereby, it is a manufacturing method of the wiring structure which greatly improves the electromigration reliability of metal wiring, and reduces the contact resistance of a contact hole site | part, and improves a device characteristic.

Description

반도체 장치의 금속 배선 제조 방법Method for manufacturing metal wiring in semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도의 (가) 내지 (라)는 본 발명에 의한 금속 배선의 제조 방법을 그 공정 순서에 따라 도시한 단면도이다.2A to 2D are cross-sectional views showing a method for manufacturing a metal wiring according to the present invention in accordance with the order of the steps thereof.

Claims (1)

불순물 확산 영역이 형성되어 있는 반도체 기판에 절연막을 형성하는 제1단계, 상기 절연막의 일부를 식각하여 상기 불순물 확산 영역의 표면이 노출되도록 컨택 홀을 형성하는 제2단계, 상기 기판 전면에 장벽 금속막을 형성하는 제3단계, 어닐링을 실시하는 제4단계, 어닐링 과정에서 형성된 자연 산화막을 제거하는 제5단계, 금속 배선을 형성하는 제6단계를 포함하는 반도체 장치의 제조 방법.A first step of forming an insulating film on a semiconductor substrate having an impurity diffusion region, a second step of etching a portion of the insulating film to form a contact hole to expose the surface of the impurity diffusion region, a barrier metal film on the entire surface of the substrate And a third step of forming, a fourth step of performing annealing, a fifth step of removing a natural oxide film formed in the annealing process, and a sixth step of forming metal wiring. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950061984A 1995-12-28 1995-12-28 Method for manufacturing metal wiring in semiconductor device KR970052412A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950061984A KR970052412A (en) 1995-12-28 1995-12-28 Method for manufacturing metal wiring in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950061984A KR970052412A (en) 1995-12-28 1995-12-28 Method for manufacturing metal wiring in semiconductor device

Publications (1)

Publication Number Publication Date
KR970052412A true KR970052412A (en) 1997-07-29

Family

ID=66621649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950061984A KR970052412A (en) 1995-12-28 1995-12-28 Method for manufacturing metal wiring in semiconductor device

Country Status (1)

Country Link
KR (1) KR970052412A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100400248B1 (en) * 2001-04-06 2003-10-01 주식회사 하이닉스반도체 Method for forming the line in semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100400248B1 (en) * 2001-04-06 2003-10-01 주식회사 하이닉스반도체 Method for forming the line in semiconductor device

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