KR970052379A - Metal wiring formation method of semiconductor device - Google Patents

Metal wiring formation method of semiconductor device Download PDF

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Publication number
KR970052379A
KR970052379A KR1019950057233A KR19950057233A KR970052379A KR 970052379 A KR970052379 A KR 970052379A KR 1019950057233 A KR1019950057233 A KR 1019950057233A KR 19950057233 A KR19950057233 A KR 19950057233A KR 970052379 A KR970052379 A KR 970052379A
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KR
South Korea
Prior art keywords
metal wiring
semiconductor device
tungsten film
film
heat treatment
Prior art date
Application number
KR1019950057233A
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Korean (ko)
Inventor
박지순
최길현
이장은
김병진
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019950057233A priority Critical patent/KR970052379A/en
Publication of KR970052379A publication Critical patent/KR970052379A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

반도체 장치의 금속배선 형성방법에 관하여 기재하고 있다. 이는, 하지막과 금속배선과의 접착력 향상을 위한 접착층 형성 단계를 구비하는 반도체 장치의 금속배선 형성방법에 있어서, 상기 금속배선으로 사용될 막으로써 화학기상증착을 이용한 텅스텐막을 사용하는 경우, 상기 텅스텐막 형성 전 단계에서 접착층이 형성된 결과물에 대한 열처리를 실시함으로써 후속되어 형성될 텅스텐막의 리프팅(lifting) 현상을 방지하는 것을 특징으로 한다. 따라서, 텅스텐막의 리프팅현상을 방지할 수 있으며, 반도체 장치의 양호한 전기적 특성을 얻을 수 있다.It describes a metal wiring forming method of a semiconductor device. In the metal wiring forming method of the semiconductor device having an adhesive layer forming step for improving the adhesion between the underlying film and the metal wiring, when the tungsten film using chemical vapor deposition is used as the film to be used as the metal wiring, the tungsten film It is characterized in that the lifting phenomenon of the tungsten film to be formed subsequently is prevented by performing heat treatment on the resultant product in which the adhesive layer is formed in the pre-forming step. Therefore, the lifting phenomenon of the tungsten film can be prevented, and good electrical characteristics of the semiconductor device can be obtained.

Description

반도체 장치의 금속배선 형성방법Metal wiring formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5도는 본 발명의 일 실시예에 따른 금속배선 형성방법을 설명하기 위해 도시한 단면도들이다.5 is a cross-sectional view illustrating a method for forming a metal wiring according to an embodiment of the present invention.

Claims (5)

하지막과 금속배선과의 접착력 향상을 위한 접착층 형성 단계를 구비하는 반도체 장치의 금속배선 형성방법에 있어서, 상기 금속배선으로 사용될 막으로써 화학기상증착을 이용한 텅스텐막을 사용하는 경우, 상기 텅스텐막 형성 전 단계에서 접착층이 형성된 결과물에 대한 열처리를 실시함으로써 후속되어 형성될 텅스텐막의 리프팅(lifting) 현상을 방지하는 것을 특징으로 하는 반도체 장치의 금속배선 형성방법.In the metal wiring forming method of the semiconductor device having an adhesive layer forming step for improving the adhesion between the underlying film and the metal wiring, in the case of using a tungsten film using chemical vapor deposition as a film to be used as the metal wiring, before forming the tungsten film A method of forming a metal wiring in a semiconductor device, characterized by preventing a lifting phenomenon of a tungsten film to be subsequently formed by performing a heat treatment on the resultant in which the adhesive layer is formed. 제1항에 있어서, 상기 접착층은 Ti/TiN 구조를 기본으로 하여 Ti가 함유된 화합물을 사용하고, 상기 텅스텐막 증착시 WF6가스를 사용하는 것을 특징으로 하는 반도체 장치의 금속배선 형성방법.The method of claim 1, wherein the adhesive layer comprises a Ti-containing compound based on a Ti / TiN structure, and uses a WF 6 gas for depositing the tungsten film. 제1항에 있어서, 상기 열처리 방법은 진공 분위기의 챔버방식 및 RTP 방식 중 어느 하나를 이용하는 것을 특징으로 하는 반도체 장치의 금속배선 형성방법.The method of claim 1, wherein the heat treatment method uses any one of a chamber method and an RTP method in a vacuum atmosphere. 제3항에 있어서, 상기 열처리 단계는 아르곤(Ar)을 비롯한 불활성 가스를 기본으로 사용하고, N2, NH3등과 같이 산소 성분이 함유되지 않은 가스를 추가하여 사용하는 것을 특징으로 하는 반도체 장치의 금속배선 형성방법.The semiconductor device of claim 3, wherein the heat treatment is performed by using an inert gas including argon (Ar) as a base, and adding an oxygen-free gas such as N 2 or NH 3 . Metal wiring formation method. 제3항에 있어서, 상기 열처리는 400℃~1000℃의 온도 범위에서 진행하는 것을 특징으로 하는 반도체 장치의 금속배선 형성방법.The method of claim 3, wherein the heat treatment is performed at a temperature in a range of 400 ° C. to 1000 ° C. 5. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057233A 1995-12-26 1995-12-26 Metal wiring formation method of semiconductor device KR970052379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057233A KR970052379A (en) 1995-12-26 1995-12-26 Metal wiring formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057233A KR970052379A (en) 1995-12-26 1995-12-26 Metal wiring formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970052379A true KR970052379A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057233A KR970052379A (en) 1995-12-26 1995-12-26 Metal wiring formation method of semiconductor device

Country Status (1)

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KR (1) KR970052379A (en)

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