KR970028926A - Power Supply Control Circuit - Google Patents

Power Supply Control Circuit Download PDF

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Publication number
KR970028926A
KR970028926A KR1019950041823A KR19950041823A KR970028926A KR 970028926 A KR970028926 A KR 970028926A KR 1019950041823 A KR1019950041823 A KR 1019950041823A KR 19950041823 A KR19950041823 A KR 19950041823A KR 970028926 A KR970028926 A KR 970028926A
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KR
South Korea
Prior art keywords
test mode
output
power supply
gate
voltage
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KR1019950041823A
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Korean (ko)
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KR0157909B1 (en
Inventor
이용구
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문정환
Lg 반도체주식회사
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Priority to KR1019950041823A priority Critical patent/KR0157909B1/en
Publication of KR970028926A publication Critical patent/KR970028926A/en
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Publication of KR0157909B1 publication Critical patent/KR0157909B1/en

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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/461Regulating voltage or current wherein the variable actually regulated by the final control device is dc using an operational amplifier as final control device

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

본 발명은 전원공급 제어회로에 관한 것으로, 일반적인 전원공급 제어회로에 있어서는 동작전원보다 높은 전압이 공급될때 전압강하부는 동작하여 전압을 강하하기 때문에 동작전원보다 낮은 전압이 입력될때는 낮은 전압의 소자특성이 바로 소자의 출력으로 나타나게 되므로 안정된 소자특성을 확보할 수 없고, 또한 소자는 낮은 전압에서 동작속도가 느리므로 출력의 속도도 느리게 되며, 높은 전압일때 항상 동작전원으로 강하되기 때문에 소자의 높은 전압에서 스트레스를 주거나 높은 전압에서의 특성을 점검할 수 없는 문제점이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power supply control circuit. In a general power supply control circuit, when a voltage higher than the operating power is supplied, the voltage drop unit operates to drop the voltage, and thus, when a voltage lower than the operating power is input, the device characteristics are lower. This is the output of the device, so stable device characteristics cannot be secured. Also, the device has a slow operation speed at low voltage, and the output speed is also slow. There was a problem that can not check stress or characteristics at high voltage.

따라서, 본 발명은 테스트모드설정기를 사용자가 임의로 조정하므로써 높은 전압의 특성을 체크하고, 외부전원의 전압에 관계없이 내부적으로 정전압을 발생시켜 안정된 소자특성을 확보할 수 있으므로 소자의 오동작을 방지할 수 있는 효과가 있다.Therefore, according to the present invention, the user can arbitrarily adjust the test mode setter to check the characteristics of the high voltage and generate a constant voltage internally regardless of the voltage of the external power supply to ensure stable device characteristics, thereby preventing malfunction of the device. It has an effect.

Description

전원공급 제어회로Power Supply Control Circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명 전원공급 제어회로도.2 is a power supply control circuit diagram of the present invention.

Claims (5)

외부전원(Vext)이 동작전원(Vop)보다 높은 전압 또는 낮은 전압으로 입력되었는지를 검출하여 그에 따른 모드제어신호를 출력하는 전압검출부(21)와, 입력신호(AX,OE,CE)에 따라 외부전원(Vext) 또는 동작전원(Vop)을 공급하는 테스트모드설정부(22)와, 상기 전압검출부(21)에서 출력하는 모드 제어신호 또는 상기 테스트모드설정부(22)에서 출력하는 신호에 의해 제어되는 외부전원(Vext)을 선택하여 그대로 내부전원(Vint)로 출력하거나 그 외부전원(Vext)을 동작전원(Vop)으로 변환하여 내부전원(Vint)으로 출력하는 내부전원 출력부(23)로 구성한 것을 특징으로 하는 전원공급 제어회로.The voltage detector 21 detects whether the external power source V ext is input at a voltage higher or lower than the operating power source Vop, and outputs a mode control signal according to the voltage detector 21 and the input signals AX, OE, and CE. The test mode setting unit 22 supplies an external power supply V ext or an operating power supply Vop, and a mode control signal output from the voltage detector 21 or a signal output from the test mode setting unit 22. Select the external power (V ext ) to be controlled and output it as internal power (V int ) or convert the external power (V ext ) to operating power (Vop) and output it to internal power (V int ). Power supply control circuit, characterized in that consisting of 23. 제1항에 있어서, 상기 테스트모드설정부(22)는 입력신호(Ax)에 따라 정상모드 또는 테스트모드를 설정하기 위한 제어신호를 출력하는 테스트 모드 제어신호출력부(31)와, 상기 모드 제어신호 출력부(31)의 출력 및 입력신호(OE,CE)에 의해 제어되는 테스트모드 설정제어부(32)와, 상기 테스트모드 설정제어부(32)의 출력에 의해 제어되는 테스트모드 신호출력부(33)로 구성한 것을 특징으로 하는 전원공급 제어회로.The test mode control signal output unit 31 according to claim 1, wherein the test mode setting unit 22 outputs a control signal for setting the normal mode or the test mode according to the input signal Ax, and the mode control. The test mode setting controller 32 controlled by the output of the signal output unit 31 and the input signals OE and CE, and the test mode signal output unit 33 controlled by the output of the test mode setting controller 32. Power supply control circuit, characterized in that consisting of. 제2항에 있어서, 상기 테스트모드 제어신호출력부(31)는 입력단(Ax)에 엔모드 트랜지스터(NM1∼NM4)를 직렬접속하고, 외부전원(Vext)에 공통접속된 엔모스 트랜지스터(NM5∼NM6)를 상기 엔모스 트랜지스터(NM1∼NM4)에 공통접속하여 차동증폭기(DIF3)의 반전 입력단자에 접속하고, 전원전압에 공통접속되어 있는 엔모스 트랜지스터(NM7)에 상기 차동증폭기(DlF3)의 비반전 입력단자를 접속하여 구성한 것을 특징으로 하는 전원공급 제어회로.The NMOS transistor of claim 2, wherein the test mode control signal output unit 31 connects the N-mode transistors NM 1 to NM 4 in series to an input terminal Ax, and is commonly connected to an external power source V ext . (NM 5 ~NM 6) of the NMOS transistor (NM 1 ~NM 4) to the common connection to the differential amplifier inverting input terminal connected to the common connected NMOS transistors (NM 7) to the power supply voltage of (DIF3) And a non-inverting input terminal of said differential amplifier (DlF3). 제2항에 있어서, 상기 테스트모드 설정제어부(32)는 차동증폭기(DlF3)의 출력이 노아게이트(NOR2,NOR3)의 입력에 공통접속되고, 차동증폭기(DlF3)의 출력이 반전(IN6), 지연(DLY)되어 노아게이트(NOR2)에 접속되고, 입력신호(OE)가 2번 반전(IN5,IN7) 되어 노아게이트(NOR2)에 접속되고, 상기 노아게이트(NOR2)의 출력이 엔모스 트랜지스터(NM8)의 게이트에 접속하고, 상기 노아게이트(NOR3)의 출력이 엔모스 트랜지스터(NM10)의 게이트에 접속하고, 입력전원(CE)이 반전기(IN9)를 통해 엔모스 트랜지스터(NM9,NM11)의 케이트에 접속하고, 상기 엔모스 트랜지스터(NM9,NM11)의 소오스를 접지에 접속하여 구성한 것을 특징으로 하는 전원공급 제어회로.The method of claim 2, wherein the test mode setting control unit 32, the output of the differential amplifier (DlF3) being commonly connected to an input of the NOR gate (NOR 2, NOR 3), the inverting output of the differential amplifier (DlF3) (IN 6 ), the delay DLY is connected to the noar gate NOR 2 , the input signal OE is inverted twice (IN 5 , IN 7 ) and is connected to the noa gate NOR 2 , and the noa gate NOR is connected. 2 ) is connected to the gate of the NMOS transistor NM 8 , the output of the NOR gate NOR 3 is connected to the gate of the NMOS transistor NM 10 , and the input power source CE is an inverter ( And a gate of the NMOS transistors (NM 9 , NM 11 ) via IN 9 ) and a source of the NMOS transistors (NM 9 , NM 11 ) connected to ground. 제2항에 있어서, 상기 테스트모드 출력부(33)는 외부전원(Vext)이 콘텐서(C1)에 직렬 접속하고, 이에 콘덴서(C1)는 반전기(IN10,IN11)에 직렬 접속하고, 상기 반전기(IN10,IN11)는 큰덴서(C2)에 직렬 접속하여 구성한 것을 특징으로 하는 전원공급 제어회로.The method of claim 2, wherein the test mode, the output unit 33 to an external power source (V ext) is connected in series to the cone tensor (C 1), whereby the capacitor (C 1) is the inverter (IN 10, IN 11) And the inverters (IN 10 , IN 11 ) are connected in series to the large capacitor (C 2 ). ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950041823A 1995-11-17 1995-11-17 Control circuit for power supply KR0157909B1 (en)

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Application Number Priority Date Filing Date Title
KR1019950041823A KR0157909B1 (en) 1995-11-17 1995-11-17 Control circuit for power supply

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Application Number Priority Date Filing Date Title
KR1019950041823A KR0157909B1 (en) 1995-11-17 1995-11-17 Control circuit for power supply

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KR970028926A true KR970028926A (en) 1997-06-24
KR0157909B1 KR0157909B1 (en) 1999-03-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100596872B1 (en) * 1999-06-30 2006-07-04 주식회사 하이닉스반도체 Level Tunning Circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105652943B (en) * 2016-03-16 2017-04-26 深圳市华宇半导体有限公司 High-voltage power supply control circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100596872B1 (en) * 1999-06-30 2006-07-04 주식회사 하이닉스반도체 Level Tunning Circuit

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