KR970024320A - Manufacturing method of stacked capacitor of semiconductor device - Google Patents

Abstract

A method of manufacturing a stacked capacitor of a semiconductor device according to the present invention comprises the steps of forming a first insulating film on a semiconductor substrate, selectively etching the first insulating film to form a contact hole, and forming an insulating film side wall on the sidewall of the contact hole; Forming a first conductive layer over the contact hole and the first insulating film, forming a second insulating film over the first conductive layer, and selectively removing the second insulating film and the first conductive layer to substitute the contact hole region. Leaving a second insulating film and a first conductive layer in the electrode region, forming a second conductive layer over the second insulating film, the first conductive layer and the first insulating film, and anisotropically dry etching the second conductive layer to form a second Forming a conductive film side wall on the insulating film and the sidewall of the first conductive layer, dry etching the conductive film side wall such that the side wall profile of the conductive film side wall is curved, and removing the second insulating film. The.

Description

Manufacturing method of stacked capacitor of semiconductor device

As this is a public information case, the full text was not included.

2 is a view for explaining a method of manufacturing a stacked capacitor of a semiconductor device according to the present invention.

Claims (4)

1. A method of manufacturing a stacked capacitor of a semiconductor device, comprising: 1) forming a first insulating film on a semiconductor substrate, and selectively etching the first insulating film to form a contact hole, and 2) forming an insulating film side wall on a sidewall of the contact hole. 3) forming a first conductive layer on the contact hole and the first insulating layer, and forming a second insulating layer on the first conductive layer, and 4) the second insulating layer and the first conductive layer. Removing the second insulating layer and the first conductive layer in the first electrode region corresponding to the contact hole region; and 5) the second insulating layer, the first conductive layer, and the first insulating layer. Forming a second conductive layer thereon and anisotropically dry etching the second conductive layer to form a conductive film side wall on the sidewalls of the second insulating film and the first conductive layer, and 6) a sidewall profile of the side wall of the conductive film. This curve A step of dry etching the conductive film such that side walls, 7) stacked capacitor The method for manufacturing a semiconductor device comprising the step of removing said second insulating film. The method of claim 1, wherein in step 6), the dry etching of the side wall of the conductive material is a plasma dry etching of an oxide film etching gas containing CF ₄ chemical gas. The method of claim 2, wherein the plasma dry etching of the oxide film etching gas has a pressure of 20 to 100 mTorr in the reaction chamber for performing etching and an internal temperature of 20 to 60 ° C. A method of manufacturing a stacked capacitor of a semiconductor device, characterized in that the high frequency power for plasma is applied in the range of 160 to 250 watts [W]. The multilayer capacitor of claim 1, wherein the first conductive layer or the second conductive layer is formed of one of polycrystalline silicon, tungsten silicide, ruthenium oxide (RuOx) -based material, platinum, titanium, and titanium nitride. Manufacturing method. ※ Note: The disclosure is based on the initial application.