KR970018360A - Device Separation Method of Semiconductor Device - Google Patents
Device Separation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970018360A KR970018360A KR1019950029318A KR19950029318A KR970018360A KR 970018360 A KR970018360 A KR 970018360A KR 1019950029318 A KR1019950029318 A KR 1019950029318A KR 19950029318 A KR19950029318 A KR 19950029318A KR 970018360 A KR970018360 A KR 970018360A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- trench
- filling
- etching
- deposition process
- Prior art date
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- Element Separation (AREA)
Abstract
STI(Shallow Trench Isolation)을 이용한 소자분리 방법이 개시된다. 본 발명은 패드산화막과 질화막 패턴에 의해 활성영역이 정의된 반도체 기판을 식각하여 트렌치 매립을 위한 1차 절연막 증착공정과, 상기 절연막의 일부를 제거하기 위한 식각 공정과, 상기 트렌치 완전 매립을 위한 2차 절연막 증착공정을 포함한다. 본 발명에 의하면, 절연막을 다단계의 증착공정에서 매립(filling)하고 이러한 다단계 매립공정 사이에 습식식각 공정을 추가하는 단순한 공정개선을 통하여, 보이드(voie)없이 트렌치를 매립할 수 있다.Disclosed is a device isolation method using shallow trench isolation (STI). The present invention provides a method of depositing a first insulating film for filling a trench by etching a semiconductor substrate in which an active region is defined by a pad oxide film and a nitride film pattern, an etching process for removing a portion of the insulating film, and a second process for completely filling the trench. A secondary insulating film deposition process. According to the present invention, trenches can be buried without voids through simple process improvement of filling an insulating film in a multi-step deposition process and adding a wet etching process between the multi-level buried processes.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도 내지 제2도는 본 발명에 의한 소자분리 방법을 각 단계별로 순차적으로 도시한 고정단면도이다.2 to 2 are fixed cross-sectional views sequentially showing the device separation method according to the present invention in each step.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029318A KR970018360A (en) | 1995-09-07 | 1995-09-07 | Device Separation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029318A KR970018360A (en) | 1995-09-07 | 1995-09-07 | Device Separation Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970018360A true KR970018360A (en) | 1997-04-30 |
Family
ID=66596695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950029318A KR970018360A (en) | 1995-09-07 | 1995-09-07 | Device Separation Method of Semiconductor Device |
Country Status (1)
Country | Link |
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KR (1) | KR970018360A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7629217B2 (en) | 2004-06-15 | 2009-12-08 | Samsung Electronics Co., Ltd. | Methods of forming void-free layers in openings of semiconductor substrates |
-
1995
- 1995-09-07 KR KR1019950029318A patent/KR970018360A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7629217B2 (en) | 2004-06-15 | 2009-12-08 | Samsung Electronics Co., Ltd. | Methods of forming void-free layers in openings of semiconductor substrates |
US7902059B2 (en) | 2004-06-15 | 2011-03-08 | Samsung Electronics Co., Ltd. | Methods of forming void-free layers in openings of semiconductor substrates |
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