KR970018360A - Device Separation Method of Semiconductor Device - Google Patents

Device Separation Method of Semiconductor Device Download PDF

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Publication number
KR970018360A
KR970018360A KR1019950029318A KR19950029318A KR970018360A KR 970018360 A KR970018360 A KR 970018360A KR 1019950029318 A KR1019950029318 A KR 1019950029318A KR 19950029318 A KR19950029318 A KR 19950029318A KR 970018360 A KR970018360 A KR 970018360A
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KR
South Korea
Prior art keywords
insulating film
trench
filling
etching
deposition process
Prior art date
Application number
KR1019950029318A
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Korean (ko)
Inventor
신홍재
최지현
김성진
황병권
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950029318A priority Critical patent/KR970018360A/en
Publication of KR970018360A publication Critical patent/KR970018360A/en

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  • Element Separation (AREA)

Abstract

STI(Shallow Trench Isolation)을 이용한 소자분리 방법이 개시된다. 본 발명은 패드산화막과 질화막 패턴에 의해 활성영역이 정의된 반도체 기판을 식각하여 트렌치 매립을 위한 1차 절연막 증착공정과, 상기 절연막의 일부를 제거하기 위한 식각 공정과, 상기 트렌치 완전 매립을 위한 2차 절연막 증착공정을 포함한다. 본 발명에 의하면, 절연막을 다단계의 증착공정에서 매립(filling)하고 이러한 다단계 매립공정 사이에 습식식각 공정을 추가하는 단순한 공정개선을 통하여, 보이드(voie)없이 트렌치를 매립할 수 있다.Disclosed is a device isolation method using shallow trench isolation (STI). The present invention provides a method of depositing a first insulating film for filling a trench by etching a semiconductor substrate in which an active region is defined by a pad oxide film and a nitride film pattern, an etching process for removing a portion of the insulating film, and a second process for completely filling the trench. A secondary insulating film deposition process. According to the present invention, trenches can be buried without voids through simple process improvement of filling an insulating film in a multi-step deposition process and adding a wet etching process between the multi-level buried processes.

Description

반도체 장치의 소자 분리 방법Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 내지 제2도는 본 발명에 의한 소자분리 방법을 각 단계별로 순차적으로 도시한 고정단면도이다.2 to 2 are fixed cross-sectional views sequentially showing the device separation method according to the present invention in each step.

Claims (3)

패드 산화막과 질화막 패턴에 의해 활성영역이 정의된 반도체 기판을 식각하여 트렌치를 형성하는 공정; 상기 트렌치 매립을 위한 1차 절연막 증착공정; 상기 절연막의 일부를 제거하기 위한 식각 공정; 및 상기 트렌치 완전 매립을 위한 2차 절연막 증착공정을 포함하는 것을 특징으로 하는 반도체장치의 소자분리 방법.Etching the semiconductor substrate having the active region defined by the pad oxide layer and the nitride layer pattern to form a trench; A first insulating film deposition process for filling the trench; An etching process for removing a portion of the insulating film; And a second insulating film deposition process for completely filling the trench. 제1항에 있어서, 상기 1차 증착된 절연막의 일부를 제거하기 위한 식각공정은 공정 후 절연막의 수직 단면구조가 포지티프한 경사(positive slope)을 가질 수 있도록 습식 식각하는 것을 특징으로 하는 반도체장치의 소자분리 방법.The semiconductor device of claim 1, wherein the etching process for removing a portion of the first deposited insulating film is performed by wet etching so that the vertical cross-sectional structure of the insulating film may have a positive slope after the process. Device separation method. 제1항에 있어서, 상기 트렌치를 매립하는 절연막이 SiO2, SiN, BN, BPSG, BSG 및 PSG중의 어느 하나의 절연물질을 사용하는 것을 특징으로 하는 반도체장치의 소자분리 방법.The method of claim 1, wherein the insulating layer filling the trench uses an insulating material of any one of SiO 2 , SiN, BN, BPSG, BSG, and PSG.
KR1019950029318A 1995-09-07 1995-09-07 Device Separation Method of Semiconductor Device KR970018360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950029318A KR970018360A (en) 1995-09-07 1995-09-07 Device Separation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950029318A KR970018360A (en) 1995-09-07 1995-09-07 Device Separation Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970018360A true KR970018360A (en) 1997-04-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950029318A KR970018360A (en) 1995-09-07 1995-09-07 Device Separation Method of Semiconductor Device

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KR (1) KR970018360A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629217B2 (en) 2004-06-15 2009-12-08 Samsung Electronics Co., Ltd. Methods of forming void-free layers in openings of semiconductor substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629217B2 (en) 2004-06-15 2009-12-08 Samsung Electronics Co., Ltd. Methods of forming void-free layers in openings of semiconductor substrates
US7902059B2 (en) 2004-06-15 2011-03-08 Samsung Electronics Co., Ltd. Methods of forming void-free layers in openings of semiconductor substrates

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