KR970018177A - Manufacturing Method of Semiconductor Device - Google Patents
Manufacturing Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970018177A KR970018177A KR1019950029208A KR19950029208A KR970018177A KR 970018177 A KR970018177 A KR 970018177A KR 1019950029208 A KR1019950029208 A KR 1019950029208A KR 19950029208 A KR19950029208 A KR 19950029208A KR 970018177 A KR970018177 A KR 970018177A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon
- polysilicon layer
- substrate
- entire surface
- semiconductor device
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체장치의 제조방법에 관한 것으로, 폴리실리콘 식각시 발생하는 폴리 스트링거를 제거하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and to remove poly stringers generated during polysilicon etching.
본 발명은 기판상에 폴리실리콘을 증착하는 공정과, 상기 폴리실리콘층을 패터닝하여 제1폴리실리콘층을 형성하는 공정, 기판 전면에 TEOS막을 형성하는 공정, 상기 TEOS막을 전면식각하여 평탄화시키는 공정,상기 TEOS막을 선택적으로 식각하여 상기 제1폴리실리콘층을 노출시키는 콘택홀을 형성하는 공정, 기판 전면에 폴리실리콘을 증착하는 공정, 및 상기 폴리실리콘을 패터닝하여 제2폴리실리콘층을 형성하는 공정을 포함하여 이루어지는 반도체장치의 제조방법을 제공한다.The present invention provides a process for depositing polysilicon on a substrate, forming a first polysilicon layer by patterning the polysilicon layer, forming a TEOS film on the entire surface of the substrate, and planarizing the entire surface of the TEOS film by etching. Selectively etching the TEOS film to form a contact hole exposing the first polysilicon layer, depositing polysilicon on the entire surface of the substrate, and forming a second polysilicon layer by patterning the polysilicon. It provides a method for manufacturing a semiconductor device comprising.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 의한 2층 폴리실리콘 배선구조의 반도체소자 제조방법을 도시한 공정순서도.2 is a process flowchart showing a semiconductor device manufacturing method of a two-layer polysilicon wiring structure according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029208A KR970018177A (en) | 1995-09-06 | 1995-09-06 | Manufacturing Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029208A KR970018177A (en) | 1995-09-06 | 1995-09-06 | Manufacturing Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970018177A true KR970018177A (en) | 1997-04-30 |
Family
ID=66597277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950029208A KR970018177A (en) | 1995-09-06 | 1995-09-06 | Manufacturing Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970018177A (en) |
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1995
- 1995-09-06 KR KR1019950029208A patent/KR970018177A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |