KR970018170A - 연마용 슬러리 및 이 연마용 슬러리를 사용하는 연마방법 - Google Patents

연마용 슬러리 및 이 연마용 슬러리를 사용하는 연마방법 Download PDF

Info

Publication number
KR970018170A
KR970018170A KR1019960038994A KR19960038994A KR970018170A KR 970018170 A KR970018170 A KR 970018170A KR 1019960038994 A KR1019960038994 A KR 1019960038994A KR 19960038994 A KR19960038994 A KR 19960038994A KR 970018170 A KR970018170 A KR 970018170A
Authority
KR
South Korea
Prior art keywords
polishing
slurry
plate
contacting
polishing plate
Prior art date
Application number
KR1019960038994A
Other languages
English (en)
Other versions
KR100511843B1 (ko
Inventor
마사가즈 무로야마
Original Assignee
이데이 노부유키
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데이 노부유키, 소니 가부시기가이샤 filed Critical 이데이 노부유키
Publication of KR970018170A publication Critical patent/KR970018170A/ko
Application granted granted Critical
Publication of KR100511843B1 publication Critical patent/KR100511843B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

피연마체 표면의 스크래치를 억제할 수 있어, 양호한 연마를 할 수 있는 슬러리와 이 슬러리를 사용한 연마방법을 제공한다.
피연마체(5)에 연마플레이트(7)를 접촉시켜 슬러리를 공급하면서 연마를 행하는 방법에 사용되는 슬러리에 있어서, 슬러리(10)의 연마입자(10a)가 최소한 카르복실기, 아미노기, 술폰산기를 함유하는 표면처리제에 의하여 처리되어 있는 슬러리와 이 슬러리를 사용한 연마방법이다.
연마입자 표면에 간편하게 처리를 할 수 있고, 피연마체 표면의 스크래치를 억제할 수 있는 슬러리와 양호한 연마를 행할 수 있는 연마방법을 실현한 수 있다.

Description

연마용 슬러리 및 이 연마용 슬러리를 사용하는 연마방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 사용하는 연마장치의 모식도이다.

Claims (8)

  1. 피연마체에 연마플레이트를 접촉시켜 슬러리를 공급하면서 연마를 행하는 방법에 사용되는 연마용 슬러리에 있어서, 이 슬러리의 연마입자가 최소한 카르복실기, 아미노기, 술폰산기를 함유하는 표면처리제에 의하여 처리되어 있는 것을 특징으로 하는 연마용 슬러리.
  2. 청구항 1에 있어서, 상기 표면처리제의 카르복실기 함유물질로서, 옥시카르본산류를 사용하는 것을 특징으로 하는 연마용 슬러리.
  3. 청구항 1에 있어서, 상기 표면처리제의 술폰산기 함유물질로서 알킬술폰산류를 사용하는 것을 특징으로 하는 연마용 슬러리.
  4. 청구항 1에 있어서, 상기 표면처리제의 아미노기 함유물질로서 알킬아민류틀 사용하는 것을 특징으로 하는 연마용 슬러리.
  5. 피연마체에 연마플레이트를 접촉시켜 슬러리를 공급하면서 연마를 행하는 방법에 있어서, 청구항 1에 기재한 연마용 슬러리를 사용하는 연마방법.
  6. 피연마체에 연마플레이트를 접촉시켜 슬러리를 공급하면서 연마를 행하는 방법에 있어서, 청구항 2에 기재한 연마용 슬러리를 사용하는 연마방법.
  7. 피연마체에 연마플레이트를 접촉시켜 슬러리를 공급하면서 연마를 행하는 방법에 있어서, 청구항 3에 기재한 연마용 슬러리를 사용하는 연마방법.
  8. 피연마체에 연마플레이트를 접촉시켜 슬러리를 공급하면서 연마를 행하는 방법에 있어서, 청구항 4에 기재한 연마용 슬러리를 사용하는 연마방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960038994A 1995-09-20 1996-09-09 연마용슬러리및이연마용슬러리를사용하는연마방법 KR100511843B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24192995A JPH0982668A (ja) 1995-09-20 1995-09-20 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
JP95-241929 1995-09-20

Publications (2)

Publication Number Publication Date
KR970018170A true KR970018170A (ko) 1997-04-30
KR100511843B1 KR100511843B1 (ko) 2005-10-26

Family

ID=17081674

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960038994A KR100511843B1 (ko) 1995-09-20 1996-09-09 연마용슬러리및이연마용슬러리를사용하는연마방법

Country Status (3)

Country Link
US (1) US5709588A (ko)
JP (1) JPH0982668A (ko)
KR (1) KR100511843B1 (ko)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6132637A (en) 1996-09-27 2000-10-17 Rodel Holdings, Inc. Composition and method for polishing a composite of silica and silicon nitride
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
US6062952A (en) 1997-06-05 2000-05-16 Robinson; Karl M. Planarization process with abrasive polishing slurry that is selective to a planarized surface
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6149696A (en) * 1997-11-06 2000-11-21 Komag, Inc. Colloidal silica slurry for NiP plated disk polishing
US6294105B1 (en) 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
JP4158066B2 (ja) * 1998-02-06 2008-10-01 ソニー株式会社 光学素子の製造方法
US6218306B1 (en) * 1998-04-22 2001-04-17 Applied Materials, Inc. Method of chemical mechanical polishing a metal layer
JP4163785B2 (ja) 1998-04-24 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
JP4163788B2 (ja) * 1998-06-25 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
US6238592B1 (en) * 1999-03-10 2001-05-29 3M Innovative Properties Company Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
US6404758B1 (en) * 1999-04-19 2002-06-11 Ericsson, Inc. System and method for achieving slot synchronization in a wideband CDMA system in the presence of large initial frequency errors
CA2378790A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Polishing system and method of its use
US6509269B2 (en) 1999-10-19 2003-01-21 Applied Materials, Inc. Elimination of pad glazing for Al CMP
US6592433B2 (en) * 1999-12-31 2003-07-15 Intel Corporation Method for defect reduction
JP2001267273A (ja) * 2000-01-11 2001-09-28 Sumitomo Chem Co Ltd 金属用研磨材、研磨組成物及び研磨方法
JP3872925B2 (ja) * 2000-01-26 2007-01-24 株式会社東芝 研磨装置および半導体装置の製造方法
JP2001269859A (ja) 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP3837277B2 (ja) 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
CN1197930C (zh) * 2000-07-19 2005-04-20 花王株式会社 抛光液组合物
US6805812B2 (en) 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
JP3970051B2 (ja) * 2002-02-27 2007-09-05 電気化学工業株式会社 研磨剤の製造方法
JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7223694B2 (en) * 2003-06-10 2007-05-29 Intel Corporation Method for improving selectivity of electroless metal deposition
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US20070228011A1 (en) * 2006-03-31 2007-10-04 Buehler Mark F Novel chemical composition to reduce defects
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2013138053A (ja) * 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
CN112518436B (zh) * 2020-11-20 2021-10-08 杭州电子科技大学 一种基于电磁原理的木质抛光工具磨抛工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL139174B (nl) * 1963-12-31 1973-06-15 Geigy Ag J R Werkwijze voor het bereiden van triamino-s-triazinederivaten, geschikt voor het bereiden van oppervlakteveredelingsmiddelen en werkwijze voor het bereiden van oppervlakteveredelingsmiddelen die deze verbindingen bevatten, alsmede voorwerpen die met deze oppervlakteveredelingsmiddelen behandeld zijn.
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
DE3222790A1 (de) * 1982-06-18 1983-12-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von indiumphosphidoberflaechen
EP0322721B1 (en) * 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers
US5137541A (en) * 1991-03-18 1992-08-11 Foster John D Polishing compounds and methods
JPH04291724A (ja) * 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハーの研摩方法
JP3290189B2 (ja) * 1991-04-11 2002-06-10 旭電化工業株式会社 シリコンウェハーの研磨方法
JPH05112775A (ja) * 1991-10-22 1993-05-07 Sumitomo Chem Co Ltd 金属材料の研磨用組成物
JPH0770553A (ja) * 1993-09-01 1995-03-14 Asahi Glass Co Ltd 研磨液及び基体の研磨方法
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3556978B2 (ja) * 1993-12-14 2004-08-25 株式会社東芝 銅系金属の研磨方法

Also Published As

Publication number Publication date
US5709588A (en) 1998-01-20
JPH0982668A (ja) 1997-03-28
KR100511843B1 (ko) 2005-10-26

Similar Documents

Publication Publication Date Title
KR970018170A (ko) 연마용 슬러리 및 이 연마용 슬러리를 사용하는 연마방법
DE69503408D1 (de) Vorrichtung zum chemisch-mechanischen Polieren mit verbesserter Verteilung der Polierzusammensetzung
KR970008391A (ko) 폴리싱포의 드레싱방법 및 장치
ATE166018T1 (de) Kompositionen und verfahren zum polieren und egalisieren von oberflächen
ATE296185T1 (de) Verfahren und vorrichtung zum planarisieren von mikroelektronischem substratenaufbau
CA2305106A1 (en) Polishing pads useful in chemical mechanical polishing of substrates in the presence of a slurry containing abrasive particles
TW200706307A (en) Semiconductor wafer peripheral edge polisher and method therefor
TW428225B (en) A method of polishing a surface of a substrate, a method of manufacturing semiconductor device, and an apparatus of manufacturing the same
ATE169253T1 (de) Schleifscheibe aus elastichem basismaterial zum glätten und polieren von torusförmigen konturen auf hartstoffen
TW374044B (en) A wafer carrier assembly for chem-mech polishing
TW376349B (en) Planarizing apparatus and a method of its use
KR950025903A (ko) 기계적 및 화학적 연마 방법 및 그 연마 장치
ATE314903T1 (de) Schleifblatt mit schlitzen zum staubsaugen, vorrichtung zur endbearbeitung von oberflächen und schleifblatthalterung
GB2016166A (en) Holding a laminar article in a planar configuration
CA2036294A1 (en) Soft contact lens processing aid
AU672653B2 (en) Polishing method, apparatus for the same and buff polishing wheel
SE8201948L (sv) Sett och anordning for kontroll av slipning
EP0934801A3 (en) Method and apparatus for polishing work
ATE204524T1 (de) Schleifwerkzeug, insbesondere für hand- oszillationsgeräte
US5700303A (en) Chrome polish/exhaust pipe de-bluer
ES2120003T3 (es) Aparato rectificador de piezas.
SU607716A1 (ru) Способ виброобразивной обработки плоских деталей в жидкой среде
SU861012A1 (ru) Способ абразивной обработки поверхностей деталей из твердых и хрупких материалов
SU905256A1 (ru) Доводочный алмазно-абразивный состав
JP3778734B2 (ja) 研摩加工用スラリー

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110818

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee