KR970018149A - Fine Pattern Formation Method of Semiconductor Device - Google Patents
Fine Pattern Formation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970018149A KR970018149A KR1019950031811A KR19950031811A KR970018149A KR 970018149 A KR970018149 A KR 970018149A KR 1019950031811 A KR1019950031811 A KR 1019950031811A KR 19950031811 A KR19950031811 A KR 19950031811A KR 970018149 A KR970018149 A KR 970018149A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- semiconductor device
- patterned
- conductive film
- adjusting
- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
본 발명은 고온산화막과 폴리실리콘막의 증착두께에 따라 CD를 자유로이 조절할 수 있는 반도체 장치의 미세패턴 형성방법에 관한 것으로서, 반도체 기판상에 패터닝될 막을 형성하는 공정과, 패터닝될 막상에 CD 조절용 절연막과 도전막을 순차 형성하는 공정과, CD 조절용 도전막상에 감광막을 도포하고, 패터닝하는 공정과, 패터닝된 감광막을 마스크로 하여 CD 조절용 도전막과 감광막을 순차 슬로프 에칭하는 공정과, 감광막과 CD 조절용 도전막을 순차 제거하는 공정과, CD 조절용 도전막을 마스크로 하여 그 하부의 패터닝될 막을 식각하여 소정의 패턴을 형성하는 공정을 포함한다.The present invention relates to a method of forming a fine pattern of a semiconductor device that can freely control a CD according to the deposition thickness of a high temperature oxide film and a polysilicon film, the method of forming a film to be patterned on a semiconductor substrate, an insulating film for CD control on a patterned film, A process of sequentially forming a conductive film, a process of applying and patterning a photosensitive film on the conductive film for CD control, a step of sequentially etching the conductive film and photosensitive film for CD control using the patterned photosensitive film as a mask, and a photosensitive film and a conductive film for CD control And a step of forming a predetermined pattern by etching the film to be patterned below using the CD adjusting conductive film as a mask.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도(A)∼(E)는 본 발명의 실시예에 따른 반도체 장치의 미세패턴 형성공정도.2A to 2E are process diagrams for forming a fine pattern of a semiconductor device according to an embodiment of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031811A KR970018149A (en) | 1995-09-26 | 1995-09-26 | Fine Pattern Formation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031811A KR970018149A (en) | 1995-09-26 | 1995-09-26 | Fine Pattern Formation Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
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KR970018149A true KR970018149A (en) | 1997-04-30 |
Family
ID=66615900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950031811A KR970018149A (en) | 1995-09-26 | 1995-09-26 | Fine Pattern Formation Method of Semiconductor Device |
Country Status (1)
Country | Link |
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KR (1) | KR970018149A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100484879B1 (en) * | 2002-09-05 | 2005-04-22 | 동부아남반도체 주식회사 | Method for forming a floating gate in a semiconductor flash cell |
-
1995
- 1995-09-26 KR KR1019950031811A patent/KR970018149A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100484879B1 (en) * | 2002-09-05 | 2005-04-22 | 동부아남반도체 주식회사 | Method for forming a floating gate in a semiconductor flash cell |
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