KR970016479A - How to form a fine pattern - Google Patents

How to form a fine pattern Download PDF

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Publication number
KR970016479A
KR970016479A KR1019950031120A KR19950031120A KR970016479A KR 970016479 A KR970016479 A KR 970016479A KR 1019950031120 A KR1019950031120 A KR 1019950031120A KR 19950031120 A KR19950031120 A KR 19950031120A KR 970016479 A KR970016479 A KR 970016479A
Authority
KR
South Korea
Prior art keywords
contact hole
forming
mask
pattern
fine pattern
Prior art date
Application number
KR1019950031120A
Other languages
Korean (ko)
Inventor
한영국
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031120A priority Critical patent/KR970016479A/en
Publication of KR970016479A publication Critical patent/KR970016479A/en

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Abstract

본 발명은 미세 패턴 형성 방법에 과한 것으로서, 특히 마스크 패턴 내부의 광 차단 패턴을 이용한 미세패턴 형성 방법에 관한 것이다.The present invention relates to a method of forming a fine pattern, and more particularly, to a method of forming a fine pattern using a light blocking pattern inside a mask pattern.

본 발명의 목적을 위해 마스크상의 콘택트 홀의 중심부에 광 차단물질인 광을 차단하는 마스크 패턴을 상용함으로서 광강도 분포를 조절하여 콘택트 홀을 형성하는 것을 특징으로 한다.For the purpose of the present invention is characterized by forming a contact hole by controlling the light intensity distribution by using a mask pattern for blocking light that is a light blocking material in the center of the contact hole on the mask.

본 발명에 의하면 웨이퍼 기판상의 단차 지역에서 비교적 균일한 크기의 콘택트 홀 또는 스페이스 패턴을 형성할 수 있다.According to the present invention, contact holes or space patterns of relatively uniform size can be formed in stepped areas on the wafer substrate.

Description

미세 패턴 형성 방법How to form a fine pattern

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도는 본 발명에 따라서 마스크상에 그려진 콘텍트 홀(Contact hole)의 완성된 평면도를 도시한 것이다.2A shows a completed plan view of a contact hole drawn on a mask in accordance with the present invention.

제2B도는 제2A도를 사용했을 때의 광강도의 분포를 도시한 그래프이다.FIG. 2B is a graph showing the distribution of light intensities when FIG. 2A is used.

제2C도는 제2A도를 사용했을 때의 감광액(24)에 형성되는 접촉 홀(Contact hole)의 측면 경사를 도시한 것이다.FIG. 2C shows the side slope of the contact hole formed in the photosensitive liquid 24 when FIG. 2A is used.

제2D도는 제2A도를 사용했을 때의 단차 지역의 감광액(26)상에 형성되는 접촉 홀의 단면도를 도시한 것이다.FIG. 2D shows a cross-sectional view of the contact hole formed on the photosensitive liquid 26 in the stepped area when using FIG. 2A.

Claims (1)

마스크상에 콘택트 홀을 형성하는 방법에 있어서, 사이 마스크상의 콘택트 홀의 중심부에 광 차단 물질인 마스크 패턴을 사용함으로서 광강도 분포를 조절하여 콘택트 홀을 형성하는 것을 특징으로 하는 미세 패턴 형성 방법.A method for forming a contact hole on a mask, wherein the contact hole is formed by adjusting a light intensity distribution by using a mask pattern, which is a light blocking material, in a central portion of the contact hole on a mask. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031120A 1995-09-21 1995-09-21 How to form a fine pattern KR970016479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031120A KR970016479A (en) 1995-09-21 1995-09-21 How to form a fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031120A KR970016479A (en) 1995-09-21 1995-09-21 How to form a fine pattern

Publications (1)

Publication Number Publication Date
KR970016479A true KR970016479A (en) 1997-04-28

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ID=66616250

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031120A KR970016479A (en) 1995-09-21 1995-09-21 How to form a fine pattern

Country Status (1)

Country Link
KR (1) KR970016479A (en)

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