KR950009937A - Alignment Mark Structure - Google Patents

Alignment Mark Structure Download PDF

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Publication number
KR950009937A
KR950009937A KR1019930018019A KR930018019A KR950009937A KR 950009937 A KR950009937 A KR 950009937A KR 1019930018019 A KR1019930018019 A KR 1019930018019A KR 930018019 A KR930018019 A KR 930018019A KR 950009937 A KR950009937 A KR 950009937A
Authority
KR
South Korea
Prior art keywords
alignment mark
pattern
alignment
wafer
narrow
Prior art date
Application number
KR1019930018019A
Other languages
Korean (ko)
Inventor
최용규
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019930018019A priority Critical patent/KR950009937A/en
Publication of KR950009937A publication Critical patent/KR950009937A/en

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Abstract

본 발명은 웨이퍼상에 형성되는 얼라인먼트마크에 좁은 도량형으로 패턴이 형성되므로써, 얼라인먼트마크 주위로 감광막의 스핀코팅이 균일하게 되어 각층간의 정렬특성을 향상시켜 광학적으로 정렬시 빛의 간섭에 의한 오정렬현상을 대폭 줄일 수 있는 것이다.According to the present invention, since the pattern is formed in the alignment mark formed on the wafer in a narrow metrology form, the spin coating of the photoresist film is uniform around the alignment mark, thereby improving the alignment characteristics between the layers, thereby improving misalignment caused by interference of light during optical alignment. It can be greatly reduced.

이를 위해, 본 발명은 웨이퍼(1)상에 형성되는 얼라인먼트마크(2)에 감광막(3)의 코팅시 균일하게 될수 있도록 좁은 도량형으로 패턴이 형성된 얼라인먼트마크의 구조이다.To this end, the present invention is a structure of an alignment mark in which a pattern is formed in a narrow metrology form so that the alignment mark 2 formed on the wafer 1 can be uniformly coated when the photosensitive film 3 is coated.

Description

얼라인먼트마크의 구조Alignment Mark Structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명을 나타낸 평면도,4 is a plan view showing the present invention,

제5도의 (a) 및 (b)는 제4도의 B-B선 단면도.(A) and (b) of FIG. 5 are sectional views taken along line B-B of FIG.

Claims (2)

웨이퍼(1)상에 형성되는 얼라인먼트마크(2)에 감광막(3)의 코팅시 균일하게 될수 있도록 좁은도량형으로 패턴이 형성된 것을 특징으로 하는 얼라인먼트마크의 구조.A structure of an alignment mark, characterized in that a pattern is formed in a narrow metrology pattern so that the alignment mark (2) formed on the wafer (1) can be uniformed upon coating of the photosensitive film (3). 제1항에 있어서, 상기 얼라인먼트마크(2)의 패턴이 1cm이하의 넓이를 갖도록 된 얼라인먼트마크의 구조.The structure of an alignment mark according to claim 1, wherein the pattern of the alignment mark (2) has an area of 1 cm or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930018019A 1993-09-08 1993-09-08 Alignment Mark Structure KR950009937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930018019A KR950009937A (en) 1993-09-08 1993-09-08 Alignment Mark Structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930018019A KR950009937A (en) 1993-09-08 1993-09-08 Alignment Mark Structure

Publications (1)

Publication Number Publication Date
KR950009937A true KR950009937A (en) 1995-04-26

Family

ID=66823818

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930018019A KR950009937A (en) 1993-09-08 1993-09-08 Alignment Mark Structure

Country Status (1)

Country Link
KR (1) KR950009937A (en)

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