KR970008474A

KR970008474A - Semiconductor Device Separation Method

Info

Publication number: KR970008474A
Application number: KR1019950020157A
Authority: KR
Inventors: 박성욱
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-07-10
Filing date: 1995-07-10
Publication date: 1997-02-24

Abstract

본 발명은 트렌치를 형성하고, 트렌치 측벽에 절연막 스페이서를 형성한 후, 노출된 반도체 기판상에 선택적 증착 공정을 수행한 다음, 전체 구조 상부를 CMP(Chemical Mechanical Polishing)하여 절연막 스페이서에 의하여 소자분리가 이루어지는 것을 특징으로 하는 반도체 소자 분리 방법에 관한 것으로, 소자 분리 폭이 포토리소그래피에 의해서 결정되는 것이 아니고 절연막 두께에 의해서 결정되므로, 포토리소그래피 공정의 해상도 한계 이하의 폭으로 소자분리막을 형성할 수 있어 반도체 소자의 고집적화를 이루는 효과가 있다.According to the present invention, a trench is formed, an insulating film spacer is formed on the sidewalls of the trench, and a selective deposition process is performed on the exposed semiconductor substrate. The semiconductor device isolation method is characterized in that the device isolation width is not determined by photolithography but is determined by the thickness of the insulating film, so that the device isolation film can be formed with a width below the resolution limit of the photolithography process. There is an effect of achieving high integration of the device.

Description

Semiconductor Device Separation Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1C도 내지 제1D도는 본 발명의 일실시예에 따른 소자분리막 형성 공정도.1C to 1D are process diagrams for forming a device isolation film according to an embodiment of the present invention.

Claims

A semiconductor device isolation method; Etching the semiconductor substrate in the region including the predetermined device isolation region to a predetermined depth to form a trench; Forming an insulating layer spacer for device isolation on the sidewalls of the trench; Forming a semiconductor film on the exposed semiconductor substrate by a selective deposition process; And etching the semiconductor film and the semiconductor substrate with a predetermined thickness until the insulating film spacer is planarized by a chemical mechanical polishing (CMP) method, thereby separating the device by the insulating film spacer. .

The method of claim 1; And a device isolation depth is determined by the trench depth where the semiconductor substrate is etched.

The method of claim 1; And a device isolation width is determined by the insulation spacer width.

※ Note: The disclosure is based on the initial application.