KR970007823B1 - Forming method of tungsten plug - Google Patents
Forming method of tungsten plug Download PDFInfo
- Publication number
- KR970007823B1 KR970007823B1 KR93024236A KR930024236A KR970007823B1 KR 970007823 B1 KR970007823 B1 KR 970007823B1 KR 93024236 A KR93024236 A KR 93024236A KR 930024236 A KR930024236 A KR 930024236A KR 970007823 B1 KR970007823 B1 KR 970007823B1
- Authority
- KR
- South Korea
- Prior art keywords
- contact hole
- layer
- depositing
- filled
- forming method
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title 1
- 229910052721 tungsten Inorganic materials 0.000 title 1
- 239000010937 tungsten Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A forming method of W-plug is provided to prevent plug loss using etching barrier layer having different etching selectivity. The method comprises the steps of: forming a first contact hole(4) and a second contact hole(5) on a interlayer insulator(3) being the width of the first contact hole(4) is smaller than that of the second contact hole(5); depositing a first W(7) having the thickness being filled the narrow first contact hole(4); depositing etching barrier layer(8) on the first W layer(7); depositing a second W layer(9) having thickness being filled the wider second contact hole(5); performing an etch-back using the etching barrier layer(8) as stopper; and removing the remained W layer(7) to W plugs filled the first and second contact holes(4, 5). Thereby, it is possible to prevent the loss of contact plugs having different width.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93024236A KR970007823B1 (en) | 1993-11-15 | 1993-11-15 | Forming method of tungsten plug |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93024236A KR970007823B1 (en) | 1993-11-15 | 1993-11-15 | Forming method of tungsten plug |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950015592A KR950015592A (en) | 1995-06-17 |
KR970007823B1 true KR970007823B1 (en) | 1997-05-17 |
Family
ID=19368082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93024236A KR970007823B1 (en) | 1993-11-15 | 1993-11-15 | Forming method of tungsten plug |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970007823B1 (en) |
-
1993
- 1993-11-15 KR KR93024236A patent/KR970007823B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950015592A (en) | 1995-06-17 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20100726 Year of fee payment: 14 |
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LAPS | Lapse due to unpaid annual fee |