KR970006270B1 - Impurity doping of semiconductor device - Google Patents

Impurity doping of semiconductor device Download PDF

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Publication number
KR970006270B1
KR970006270B1 KR94009712A KR19940009712A KR970006270B1 KR 970006270 B1 KR970006270 B1 KR 970006270B1 KR 94009712 A KR94009712 A KR 94009712A KR 19940009712 A KR19940009712 A KR 19940009712A KR 970006270 B1 KR970006270 B1 KR 970006270B1
Authority
KR
South Korea
Prior art keywords
heat treatment
temperature
doping
gas
impurity gas
Prior art date
Application number
KR94009712A
Other languages
Korean (ko)
Other versions
KR950034628A (en
Inventor
Sang-Bum Hu
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR94009712A priority Critical patent/KR970006270B1/en
Publication of KR950034628A publication Critical patent/KR950034628A/en
Application granted granted Critical
Publication of KR970006270B1 publication Critical patent/KR970006270B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A method of doping impurities for the purpose of uniformly distributing impurities in a polysilicon layer used as a conductive line in a semiconductor device includes the steps of loading a wafer on which a polysilicon layer 13 will be formed into a reaction chamber in which a predetermined temperature is maintained, and increasing the temperature up to a temperature for the first doping and heat treatment, injecting an impurity gas into the reaction chamber under the temperature for the first doping and heat treatment to carry out the first doping process, removing the impurity gas and performing the first heat treatment for a predetermined period of time under the ambient of N2 gas, decreasing the temperature below the temperature for the first doping and heat treatment, injecting an impurity gas into the reaction chamber to carry out the second doping process, removing the impurity gas and performing the second heat treatment for a predetermined period of time in the ambient of N2 gas, and doping and heat treatment are performed by a plurality number of times while gradually decreasing the temperature by a predetermined level and performing heat treatment for a predetermined period of time, to allow uniform concentration distribution to be made in the polysilicon layer 13.
KR94009712A 1994-05-03 1994-05-03 Impurity doping of semiconductor device KR970006270B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR94009712A KR970006270B1 (en) 1994-05-03 1994-05-03 Impurity doping of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94009712A KR970006270B1 (en) 1994-05-03 1994-05-03 Impurity doping of semiconductor device

Publications (2)

Publication Number Publication Date
KR950034628A KR950034628A (en) 1995-12-28
KR970006270B1 true KR970006270B1 (en) 1997-04-25

Family

ID=19382421

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94009712A KR970006270B1 (en) 1994-05-03 1994-05-03 Impurity doping of semiconductor device

Country Status (1)

Country Link
KR (1) KR970006270B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101293102B1 (en) 2006-11-09 2013-08-12 삼성전자주식회사 Apparatus for splitting signal and video apparatus thereof

Also Published As

Publication number Publication date
KR950034628A (en) 1995-12-28

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