KR970003716B1 - Method of a bipolar cmos - Google Patents

Method of a bipolar cmos Download PDF

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Publication number
KR970003716B1
KR970003716B1 KR89009335A KR890009335A KR970003716B1 KR 970003716 B1 KR970003716 B1 KR 970003716B1 KR 89009335 A KR89009335 A KR 89009335A KR 890009335 A KR890009335 A KR 890009335A KR 970003716 B1 KR970003716 B1 KR 970003716B1
Authority
KR
South Korea
Prior art keywords
forming
bipolar cmos
region
depositing
silicon nitride
Prior art date
Application number
KR89009335A
Other languages
Korean (ko)
Other versions
KR910001943A (en
Inventor
Chan-Hee Hong
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR89009335A priority Critical patent/KR970003716B1/en
Publication of KR910001943A publication Critical patent/KR910001943A/en
Application granted granted Critical
Publication of KR970003716B1 publication Critical patent/KR970003716B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A fabrication method of bipolar CMOS(complementary MOS) transistor is provided to improve an yield. The method comprises the steps of: forming a silicon nitride(12) on an N-well(11) and growing an isolating oxide(13); defining an active region(14,15) by selective etching the silicon nitride(12) and ion-implanting a P-type and N-type ions; forming a P region(17) and N region(18) after depositing an oxide layer(16) and removing the nitride(12); forming a polysilicon gate(19) and a sidewall spacer(21); and depositing a metal for electrode on the P and N regions(17,18). Thereby, it is possible to easily form the bipolar CMOS transistor.
KR89009335A 1989-06-30 1989-06-30 Method of a bipolar cmos KR970003716B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR89009335A KR970003716B1 (en) 1989-06-30 1989-06-30 Method of a bipolar cmos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR89009335A KR970003716B1 (en) 1989-06-30 1989-06-30 Method of a bipolar cmos

Publications (2)

Publication Number Publication Date
KR910001943A KR910001943A (en) 1991-01-31
KR970003716B1 true KR970003716B1 (en) 1997-03-21

Family

ID=19287729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR89009335A KR970003716B1 (en) 1989-06-30 1989-06-30 Method of a bipolar cmos

Country Status (1)

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KR (1) KR970003716B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100529193B1 (en) * 2002-12-06 2005-11-17 원철희 Gas range having frame used as table
KR20210118568A (en) 2020-03-23 2021-10-01 정재원 Portable Sink
KR102456424B1 (en) 2020-03-23 2022-10-18 정재원 Portable Sink
KR102422315B1 (en) 2020-08-07 2022-07-15 정재원 Portable Sink

Also Published As

Publication number Publication date
KR910001943A (en) 1991-01-31

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