KR970002411A

KR970002411A - Pixel electrode structure of liquid crystal display device

Info

Publication number: KR970002411A
Application number: KR1019950017710A
Authority: KR
Inventors: 최대영; 박진용
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-06-28
Filing date: 1995-06-28
Publication date: 1997-01-24

Abstract

본 발명은 액정표시소자에 있어서 박막 트랜지스터 부분을 게이트 라인상에 위치하도록 하므로써 화소전극의 개구율을 증대시킬 수 있는 액정표시소자의 화소전극구조에 관한 것이다. 이러한 본 발명 액정표시소자의 화소 전극구조는 투광성 절연기판과, 기판위에 형성된 게이트 라인과, 게이트 라인을 절연하기 위한 절연부재와, 게이트 라인상에 있는 절연부재 위에서 소정 길이만큼 형성된 도핑되지 않은 반도체 층과, 도핑되지 않은 반도체 위의 소정부위에 형성된 소오스, 드레인 영역과, 드레인 영역 위의 게이트 라인 이내에 그것의 대부분이 위치하며, 그 일부가 화소전극과의 전기적 연결을 위하여 뻗어 있는 드레인 금속 배선층과, 소오스 영역 위의 게이트 라인 이내에 위치하여 데이타 라인과 연결되는 소오스 금속 배선층으로 구성되는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pixel electrode structure of a liquid crystal display device capable of increasing the aperture ratio of a pixel electrode by placing a thin film transistor portion on a gate line in the liquid crystal display device. The pixel electrode structure of the liquid crystal display device of the present invention comprises a transmissive insulating substrate, a gate line formed on the substrate, an insulating member for insulating the gate line, and an undoped semiconductor layer formed over a predetermined length on the insulating member on the gate line. A source, drain region formed on a predetermined portion over the undoped semiconductor, a drain metal wiring layer, a portion of which is located within the gate line on the drain region, a portion of which extends for electrical connection with the pixel electrode; And a source metal wiring layer positioned within the gate line on the source region and connected to the data line.

Description

Pixel electrode structure of liquid crystal display device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 일실시예에 따른 액정표시소자용 화소전극구조의 평면도, 제4도는 본 발명의 다른 실시예에 따른 액정표시소자용 화소전극 구조의 평면도.3 is a plan view of a pixel electrode structure for a liquid crystal display device according to an embodiment of the present invention, and FIG. 4 is a plan view of a pixel electrode structure for a liquid crystal display device according to another embodiment of the present invention.

Claims

A translucent insulating substrate, a gate line formed on the substrate, an insulating member for insulating the gate line, an undoped semiconductor layer formed by a predetermined length over the insulating member on the gate line, and the undoped semiconductor layer A source region formed at a predetermined portion of the upper portion, a drain region formed at a predetermined portion on the undoped semiconductor layer, and a majority of the portions thereof are located within a gate line on the source region, and a portion of the source region is electrically connected to the pixel electrode. And a source metal wiring layer extending in order to form a source metal wiring layer and a drain metal wiring layer positioned within a gate line on the drain region and connected to a data line.

2. The liquid crystal display according to claim 1, wherein the gate line connected to the gate electrodes decreases stepwise at one end of the access portion toward the drain metal wiring so that its width is slightly wider than that of the amorphous semiconductor region. Pixel electrode structure of the device.

2. The pixel electrode structure of claim 1, wherein the drain electrode wiring is formed on the data line in the shape of an upper portion of the source region.

※ Note: The disclosure is based on the initial application.