KR960042170A - Liquid Crystal Display and Manufacturing Method Thereof - Google Patents

Liquid Crystal Display and Manufacturing Method Thereof Download PDF

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Publication number
KR960042170A
KR960042170A KR1019950014248A KR19950014248A KR960042170A KR 960042170 A KR960042170 A KR 960042170A KR 1019950014248 A KR1019950014248 A KR 1019950014248A KR 19950014248 A KR19950014248 A KR 19950014248A KR 960042170 A KR960042170 A KR 960042170A
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KR
South Korea
Prior art keywords
gate
liquid crystal
data line
crystal display
forming
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Application number
KR1019950014248A
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Korean (ko)
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KR0163899B1 (en
Inventor
정종인
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김광호
삼성전자 주식회사
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Priority to KR1019950014248A priority Critical patent/KR0163899B1/en
Publication of KR960042170A publication Critical patent/KR960042170A/en
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Publication of KR0163899B1 publication Critical patent/KR0163899B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 액정 표시 장치 및 그 제조 방법에 관한 것으로서 특히. 데이타 라인과 게이트 캐패시턴스 링이 겹치도록 형성하고, 아몰퍼스 실리콘을 데이타 라인 하부에 형성하여 광 산란에 의한 누설 전류를 감소시키는 위하여, 화소부와, 데이타 라인과, 게이트 라인과 게이트 캐패시턴스링을 포함하는 게이트 라인 배선과, 상기 데이타 라인과 상기 게이트 라인의 교차부에 형성되어 있는 스위칭 소자를 포함하는 하부 기판과; 칼라 필터와, 블랙매트릭스와, 공통 전극을 포함하는 상부 기판과; 상기 하부 기관과 상기 상부기판 사이에 채워져 있는 액정으로 이루어진 액정 표시 장치에 있어서, 상기 데이타 라인은 상기 캐패시턴스 일과 겹치도록 형성하고, 상기 데이타 라인의 하부에는 아몰퍼스 실리콘층을 형성하는 것을 특징으로 한다.This invention relates to a liquid crystal display device and its manufacturing method especially. A gate including a pixel portion, a data line, a gate line, and a gate capacitance ring to form a data line and a gate capacitance ring to overlap and to form an amorphous silicon under the data line to reduce leakage current due to light scattering. A lower substrate including a line wiring and a switching element formed at an intersection of the data line and the gate line; An upper substrate comprising a color filter, a black matrix, and a common electrode; A liquid crystal display device comprising a liquid crystal filled between the lower engine and the upper substrate, wherein the data line is formed to overlap the capacitance work, and an amorphous silicon layer is formed below the data line.

Description

액정 표시 장치 및 그 제조 방법Liquid Crystal Display and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 액정 표시 장의 본 발명의 실시예에 따른 데이타 라인을 보인 저단면도이고, 제3도는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인을 보인 저면도이고, 제3－1도는 상기 제3도의 B－B´의 부분 확대도이고, 제4도의(가)－(라)는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인의 제조 공정의 순서를 나타낸 단면도이다.2 is a bottom cross-sectional view showing a data line according to an exemplary embodiment of the present invention in a liquid crystal display field, and FIG. 3 is a bottom view showing a data line according to an exemplary embodiment of the present invention of a liquid crystal display, and FIG. 3B is a partially enlarged view of B-B ', and FIG. 4A is a cross-sectional view showing a procedure of a data line manufacturing process according to an embodiment of the present invention of a liquid crystal display device.

Claims (4)

화소부와, 상기 화소부에 화상 정보 신호를 전달하는 데이타 라인과, 상기 화소부에 구동 신호를 전달하는 게이트 라인과 상기 화소부의 둘레에 형성되어 있는 게이트 캐패시턴스링을 포함하는 게이트 라인 배선과, 상기 데이타 라인과 상기 게이트 라인의 교차부에 형성되어 있는 스위칭 소자를 포함하는 하부 기판과; 칼라 필터와, 블랙 매트리스와, 공통 전극을 포함하는 상부 기판과; 상기 하부 기판과 상기 상부 기판 사이에 채워져 있는 액정으로 이루어진 액정 표시 장치에 있어서, 상기 데이타 라인은 상기 캐패시턴스 링과 겹치도록 형성되어 있으며, 상기 데이타 라인의 하부에는 야몰퍼스 실리콘층이 형성되어 있는 것을 특징으로 하는 액정 표시 장치.A gate line wiring including a pixel portion, a data line transferring an image information signal to the pixel portion, a gate line transferring a driving signal to the pixel portion, and a gate capacitance ring formed around the pixel portion; A lower substrate including a switching element formed at an intersection of the data line and the gate line; An upper substrate comprising a color filter, a black mattress, and a common electrode; A liquid crystal display device comprising a liquid crystal filled between the lower substrate and the upper substrate, wherein the data line is formed to overlap the capacitance ring, and a silicon silicon layer is formed below the data line. Liquid crystal display device. 제1항에 있어서, 상기 게이트 라인 배선은 크롬, 알루미늄, 탄탈륨 중 어느 하나인 것을 특징으로 하는 액정 표시 장치.The liquid crystal display of claim 1, wherein the gate line wiring is any one of chromium, aluminum, and tantalum. 제1항에 있어서, 상기 아몰퍼스 실리콘막이 두께는 1500A 이상인 것을 특징으로 하는 액정 표시 장치.The liquid crystal display device according to claim 1, wherein the amorphous silicon film has a thickness of 1500 A or more. 기판위에 게이트 메탈을 적층한 후 게이트 전극 패턴 형성시 게이트 캐패시턴스 링을 형성하는 단계와, 상기 게이트 캐패시턴스 링의 상부에 절연막을 형성하는 단계와, 상기 절연막의 상부에 아몰퍼스 실리콘막을 형성하는 단계와, 상기 아몰퍼스 실리콘막의 상부에 소스/드레인 메탈을 상기 게이트 캐패시턴스 링과 오버랩되게 형성하는 단계를 포함하는 것을 특징으로 하는 액정 표시 장치의 제조 방법.Forming a gate capacitance ring upon forming a gate electrode pattern after laminating a gate metal on a substrate, forming an insulating film on the gate capacitance ring, forming an amorphous silicon film on the insulating film, and And forming a source / drain metal on the amorphous silicon film so as to overlap with the gate capacitance ring. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950014248A 1995-05-31 1995-05-31 Liquid crystal display device and its manufacturing method KR0163899B1 (en)

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KR1019950014248A KR0163899B1 (en) 1995-05-31 1995-05-31 Liquid crystal display device and its manufacturing method

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KR960042170A true KR960042170A (en) 1996-12-21
KR0163899B1 KR0163899B1 (en) 1999-01-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100552298B1 (en) * 1998-09-24 2006-06-07 삼성전자주식회사 Liquid crystal display device and substrate manufacturing method for liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100552298B1 (en) * 1998-09-24 2006-06-07 삼성전자주식회사 Liquid crystal display device and substrate manufacturing method for liquid crystal display device

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KR0163899B1 (en) 1999-01-15

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