KR950033621A - LCD Display - Google Patents

LCD Display Download PDF

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KR950033621A
KR950033621A KR1019950004422A KR19950004422A KR950033621A KR 950033621 A KR950033621 A KR 950033621A KR 1019950004422 A KR1019950004422 A KR 1019950004422A KR 19950004422 A KR19950004422 A KR 19950004422A KR 950033621 A KR950033621 A KR 950033621A
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liquid crystal
crystal display
video signal
display device
insulating substrate
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Korean (ko)
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마시히코 수즈키
키쿠오 오노
증이치 오오와다
히카루 이토
타츠오 카메이
쿠니유키 마츠나가
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카나이 쯔또무
가부시기가이샤 히다찌세이사구쇼
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Publication of KR950033621A publication Critical patent/KR950033621A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은, 박막 트랜지스터(TFT)등을 스위칭소자로서 사용한 엑티브.매트릭스 방식의 액정표시장치에 있어서, 외부입사광의 신호선에 의한 반사를 억제하는 것을 목적으로 한 것이며, 그 구성에 있어서 영상신호선(DL)과 제1의 투명유리기판(SUB1)과의 사이에, 영상신호선(DL)의 패턴을 따라서; 형반도체증(AS)와 게이트절연막(GI)을 형성하고, 또한 백라이트가 제2의 투명유리기판(SUB2)쪽에 배치되어 있는 구성으로 한 것을 특징으로 한 것이며, 이로써, 외광의 신호선에 의한 반사를 방지할 수 있어, 표시품질이 향상된다.The present invention aims to suppress reflection by signal lines of external incident light in an active-matrix liquid crystal display device using a thin film transistor (TFT) or the like as a switching element. ) Along the pattern of the video signal line DL between the first transparent glass substrate SUB1; The semiconductor device AS and gate insulating film GI are formed, and the backlight is disposed on the second transparent glass substrate SUB2. Thus, reflection of external light by the signal line is achieved. It can prevent, and display quality improves.

Description

액정표시장치LCD Display

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 실시예 1의 제2도의 1-1절단선에 있어서의 서로 인접하는 영상신호선(데이터라인)과 투명화소전극을 표시한 단면도, 제2도는 본 발명이 적용되는 액티브 매트릭스방식의 컬러액정표시장치의 액정표시부의 제1화소와 그 주변을 나타내는 요부평면도, 제3도는 제1도의 3-3절단선에 있어서의 제1화소의 TFT와 그 주변을 표시한 단면도.1 is a cross-sectional view showing adjacent video signal lines (data lines) and transparent pixel electrodes in the 1-1 cutting line of FIG. 2 of Embodiment 1 of the present invention, and FIG. 2 is an active matrix method to which the present invention is applied. Fig. 3 is a plan view showing main parts of the first pixel and its periphery of the liquid crystal display of the color liquid crystal display of Fig. 3, and Fig. 3 is a cross-sectional view showing the TFT and the periphery of the first pixel at the cut line 3-3 of Fig. 1;

Claims (16)

수평방향으로 뻗어있고, 또한 수직방향으로 복수개 배치된 주사신호선과, 수직방향으로 뻗어있고, 또한 수평방향으로 복수개 배치된 영상신호선과, 인접하는 2개의 상기 주사신호선과 인접하는 2개의 상기 영상신호선과의 교차 영역내에 각각 배치된 제1의 화소전극과 스위칭소자를 형성한 제1의 절연기판과, 상기 제1의 화소전극에 대향해서 제2의 화소전극을 형성한 제2의 절연기판을 소정의 간격을 사이에두고 맞포개고, 상기 양 기판간에 액정을 실링해서 이루어진 액정표시패널을 가진 액정표시장치에 있어서, 상기 영상신호선과 상기 제1의 절연기판과의 사이에, 반도체막이 상기 영상신호선을 따른 형상으로 패터닝되고, 또한, 백라이트가 상기 제2의 절연기판쪽에 배치되어 있는 것을 특징으로 하는 액정표시장치.A plurality of scan signal lines extending in a horizontal direction and arranged in a plurality of vertical directions, video signal lines extending in a vertical direction and arranged in a plurality of horizontal directions, and two video signal lines adjacent to two adjacent scan signal lines; A first insulating substrate formed with a first pixel electrode and a switching element disposed in an intersection region of the second substrate; and a second insulating substrate having a second pixel electrode formed opposite to the first pixel electrode. A liquid crystal display device having a liquid crystal display panel formed by overlapping spaced apart gaps and sealing liquid crystals between the two substrates, wherein a semiconductor film is formed along the video signal line between the video signal line and the first insulating substrate. A liquid crystal display device patterned in shape and further comprising a backlight disposed on the second insulating substrate side. 수평방향으로 뻗어있고, 또한 수직방향으로 복수개 배치된 주사신호선과, 수직방향으로 뻗어있고, 또한 수평방향으로 복수개 배치된 영상신호선과, 인접하는 2개의 상기 주사신호선과 인접하는 2개의 상기 영상신호선과의 교차 영역내에 각각 배치된 제1의 화소전극과 스위칭소자를 형성한 제1의 절연기판과, 상기 제1의 화소전극에 대향해서 제2의 화소전극을 형성한 제2의 절연기판을 소정의 간격을 사이에두고 맞포개고, 상기 양 기판간에 액정을 실링해서 이루어진 액정표시패널을 가진 액정표시장치에 있어서, 상기 영상신호선과 상기 제1의 절연기판과의 사이에, 반도체막이 상기 영상신호선을 따른 형상으로 패터닝되고, 상기 반도체막과 상기 제1의 절연기판과의 사이에, 절연막이 상기 영상신호선을 따른 형상으로 패터닝되고, 또한, 백라이트가 상기 제2의 절연기판쪽에 배치되어 있는 것을 특징으로 하는 액정표시장치.A plurality of scan signal lines extending in a horizontal direction and arranged in a plurality of vertical directions, video signal lines extending in a vertical direction and arranged in a plurality of horizontal directions, and two video signal lines adjacent to two adjacent scan signal lines; A first insulating substrate formed with a first pixel electrode and a switching element disposed in an intersection region of the second substrate; and a second insulating substrate having a second pixel electrode formed opposite to the first pixel electrode. A liquid crystal display device having a liquid crystal display panel formed by overlapping spaced apart gaps and sealing liquid crystals between the two substrates, wherein a semiconductor film is formed along the video signal line between the video signal line and the first insulating substrate. Patterned into a shape, an insulating film is patterned into a shape along the image signal line between the semiconductor film and the first insulating substrate, and further A liquid crystal display device characterized in that is disposed on the insulating substrate of the second. 수평방향으로 뻗어있고, 또한 수직방향으로 복수개 배치된 주사신호선과, 수직방향으로 뻗어있고, 또한 수평방향으로 복수개 배치된 영상신호선과, 인접하는 2개의 상기 주사신호선과 인접하는 2개의 상기 영상신호선과의 교차 영역내에 각각 배치된 제1의 화소전극과 스위칭소자를 형성한 제1의 절연기판과, 상기 제1의 화소전극에 대향해서 제2의 화소전극을 형성한 제2의 절연기판을 소정의 간격을 사이에두고 맞포개고, 상기 양 기판간에 액정을 실링해서 이루어진 액정표시패널을 가진 액정표시장치에 있어서, 상기 제2의 절연기판의 면위에 형성된 블랙매트릭스가 반도체막으로 이루어지고, 또한, 백라이트가 상기 제2의 절연기판쪽에 배치되어 있는 것을 특징으로 하는 액정표시장치.A plurality of scan signal lines extending in a horizontal direction and arranged in a plurality of vertical directions, video signal lines extending in a vertical direction and arranged in a plurality of horizontal directions, and two video signal lines adjacent to two adjacent scan signal lines; A first insulating substrate formed with a first pixel electrode and a switching element disposed in an intersection region of the second substrate; and a second insulating substrate having a second pixel electrode formed opposite to the first pixel electrode. In a liquid crystal display device having a liquid crystal display panel formed by overlapping the gaps and sealing a liquid crystal between the two substrates, a black matrix formed on the surface of the second insulating substrate is formed of a semiconductor film, and further includes a backlight. Is arranged on the second insulating substrate side. 제3항에 있어서, 상기 영상신호선과 상기 제1의 절연기판과의 사이에, 반도체막이 상기 영상신호선을 따른 형상으로 패터닝되어 있는 것을 특징으로 하는 액정표시장치.4. The liquid crystal display device according to claim 3, wherein a semiconductor film is patterned in a shape along the video signal line between the video signal line and the first insulating substrate. 제3항에 있어서, 상기 영상신호선과 상기 제1의 절연기판과의 사이에, 반도체막이 상기 영상신호선을 따른 형상으로 패터닝되고, 상기 반도체막과 상기 제1의 절연기판과의 사이에, 절연막이 상기 영상신호선을 따른 형상으로 패터닝되어 있는 것을 특징으로 하는 액정표시장치.4. The semiconductor device according to claim 3, wherein a semiconductor film is patterned in a shape along the video signal line between the video signal line and the first insulating substrate, and an insulating film is formed between the semiconductor film and the first insulating substrate. And a patterned pattern along the image signal line. 제1항, 제2항 또는 제3항에 있어서, 상기 반도체막, 상기 절연막의 폭이 상기 영상신호선의 폭과 동일하거나, 또는 상기 영상신호선의 폭보다 큰 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, 2 or 3, wherein the width of the semiconductor film and the insulating film is equal to the width of the video signal line or larger than the width of the video signal line. 제1항, 제2항 또는 제3항에 있어서, 상기 절연막의 폭≥상기 반도체막의 폭≥상기 영상신호선의 폭의 관계를 가진 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, 2 or 3, wherein the width of the insulating film is greater than the width of the semiconductor film is greater than the width of the video signal line. 제1항 또는 제2항에 있어서, 상기 반도체막, 상기 절연막이 상기 제1의 화소전극과 겹쳐지고 있지 않는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1 or 2, wherein the semiconductor film and the insulating film do not overlap with the first pixel electrode. 제1항, 제2항 또는 제3항에 있어서, 상기 스위칭소자가 박막트랜지스터인 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, 2 or 3, wherein the switching element is a thin film transistor. 제1항 또는 제2항에 있어서, 상기 반도체막이, 상기 박막트랜지스터의 채널영역으로 되는 반도체막과 동일형성공정에 있어서, 동일재료로 형성되어 있는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1 or 2, wherein the semiconductor film is formed of the same material in the same formation process as the semiconductor film serving as the channel region of the thin film transistor. 제1항, 제2항 또는 제3항에 있어서, 상기 반도체막이 비정질실리콘막인 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, 2 or 3, wherein the semiconductor film is an amorphous silicon film. 제1항, 제2항 또는 제3항에 있어서, 상기 반도체막의 패터닝형성이 상기 박막트랜지스터가 형성되어 있는 부분 이외에서 상기 영상신호선의 패터닝형상과 거의 동일한 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, 2 or 3, wherein the patterning formation of the semiconductor film is substantially the same as the patterning shape of the video signal line except for the portion where the thin film transistor is formed. 제1항, 제2항 또는 제3항에 있어서, 상기 절연막이, 상기 박막트랜지스터의 게이트절연막과 동일형성공정에 있어서, 동일재료로 형성되어 있는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, 2 or 3, wherein the insulating film is formed of the same material in the same formation process as the gate insulating film of the thin film transistor. 제1항, 제2항 또는 제3항에 있어서, 상기 반도체막과 상기 제1의 화소전극과의 사이의 부분의, 상기 양기판면과 수직방향에 대응하는 상기 제2의 절연기판면의 부분에 컬러필터가 형성되어 있는 것을 특징으로 하는 액정표시장치.4. The portion of the second insulating substrate surface according to claim 1, 2 or 3 corresponding to a direction perpendicular to the positive substrate surface of the portion between the semiconductor film and the first pixel electrode. A liquid crystal display device, characterized in that a color filter is formed. 제1항, 제2항 또는 제3항에 있어서, 상기 주사신호선과 상기 제1의 절연기판과의 사이에, 반사방지막이 상기 영상신호선을 따른 형상으로 패터닝되어 있는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, 2 or 3, wherein an antireflection film is patterned in a shape along the video signal line between the scan signal line and the first insulating substrate. 제1항, 제2항 또는 제3항에 있어서, 상기 박막트랜지스터가, 상기 제1의 절연기판상에 차례로, 게이트전극, 게이트절연막, 채널형성용 반도체층, 소스.드레인전극이 형성된 익스태기구조를 채택하고 있는 것을 특징으로 하는 액정표시장치.The structure of claim 1, 2, or 3, wherein the thin film transistor is formed with a gate electrode, a gate insulating film, a channel forming semiconductor layer, a source and a drain electrode sequentially formed on the first insulating substrate. And a liquid crystal display device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
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