KR20000014689A - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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Publication number
KR20000014689A
KR20000014689A KR1019980034233A KR19980034233A KR20000014689A KR 20000014689 A KR20000014689 A KR 20000014689A KR 1019980034233 A KR1019980034233 A KR 1019980034233A KR 19980034233 A KR19980034233 A KR 19980034233A KR 20000014689 A KR20000014689 A KR 20000014689A
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South Korea
Prior art keywords
line
storage capacitor
gate line
liquid crystal
crystal display
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KR1019980034233A
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Korean (ko)
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김영훈
이두희
이한승
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김영환
현대전자산업 주식회사
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Priority to KR1019980034233A priority Critical patent/KR20000014689A/en
Publication of KR20000014689A publication Critical patent/KR20000014689A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE: A liquid crystal display(LCD) device is provided to improve an optical efficiency and an aperture by forming a transparent film as a storage electrode and by arranging a storage capacitor bus line on an optical isolation region. CONSTITUTION: An LCD device having a gate line, a data line arranged in a matrix shape, a thin film transistor (TFT) formed in a cross part of the gate line and the data line, and a pixel electrode arranged in a space formed by the gate and the data line is comprises a storage capacitor bus line arranged with the gate line in parallel, and a transparent storage electrode connected and arranged with the storage capacitor in bottom of the storage capacitor bus line and overlapped with a part of the pixel electrode. The storage capacitor bus line and the gate line are formed using a MoW film.

Description

액정 표시 소자Liquid crystal display element

본 발명은 액정 표시 소자에 관한 것으로, 특히 개구율을 향상시킬 수 있는 액정 표시 소자에 관한 것이다.TECHNICAL FIELD This invention relates to a liquid crystal display element. Specifically, It is related with the liquid crystal display element which can improve an aperture ratio.

일반적으로, 액정 표시 소자는 텔레비전 또는 그래픽 디스플레이 등의 표시 소자로서 사용된다. 특히 액티브 매트릭스형 액정 표시 소자는 고속 응답성을 지니고, 높은 화소 개수를 갖는데 적당할 뿐만 아니라, 디스플레이 화면의 고화질화, 대형화, 컬러 화면화 등을 실현하는데 적합하다. 이러한 액정 표시 소자의 스위칭 소자로서, 급준한 온오프 특성을 지니는 박막 트랜지스터(Thin Film Transistor ; TFT)가 주로 사용된다.Generally, liquid crystal display elements are used as display elements, such as a television or a graphic display. In particular, the active matrix liquid crystal display device has high speed response, is suitable for having a high number of pixels, and is suitable for realizing high quality, large size, color screen, and the like of a display screen. As a switching element of such a liquid crystal display element, a thin film transistor (TFT) having steep on-off characteristics is mainly used.

도 1은 상기한 종래의 액정 표시 소자를 나타낸 평면도이다.1 is a plan view showing a conventional liquid crystal display device.

도 1을 참조하면, 유리기판과 같은 투명한 절연기판(미도시) 상에 게이트 라인(20)과 데이터 라인(70)이 매트릭스 형태로 배열되고, 게이트 라인(20)과 데이터 라인(70)이 교차하는 부분에 게이트 라인(20) 및 데이터 라인(70)에 연결된 박막 트랜지스터(100)가 배열된다. 게이트 라인(20)과 나란하게 스토리지 전극(20a)이 배열되어, 이후 설명할 화소전극(80)과 스토리지 캐패시터를 이룬다. 게이트 라인(20) 및 데이터 라인(70)에 의해 형성된 공간에 게이트 라인(20) 및 데이터 라인(70)과 소정부분 이격됨과 더불어 박막 트랜지스터(100)의 소오스(70b)와 연결되어 화소전극(80)이 배열된다.Referring to FIG. 1, a gate line 20 and a data line 70 are arranged in a matrix on a transparent insulating substrate (not shown) such as a glass substrate, and the gate line 20 and the data line 70 intersect with each other. The thin film transistor 100 connected to the gate line 20 and the data line 70 is arranged at a portion thereof. The storage electrode 20a is arranged in parallel with the gate line 20 to form a storage capacitor with the pixel electrode 80 to be described later. In the space formed by the gate line 20 and the data line 70, the predetermined portion is spaced apart from the gate line 20 and the data line 70, and is connected to the source 70b of the thin film transistor 100 so as to connect the pixel electrode 80. ) Is arranged.

상기한 종래의 액정 표시 소자에서는 불투명 금속으로 이루어진 스토리지 전극(20a)에 의해 백라이트(미도시)로부터 입사되는 광이 차단되기 때문에, 개구율이감소될 뿐만 아니라 광효율이 감소된다.In the above-mentioned conventional liquid crystal display device, since light incident from a backlight (not shown) is blocked by the storage electrode 20a made of an opaque metal, not only the aperture ratio is reduced but also the light efficiency is reduced.

따라서, 본 발명은 상기한 종래의 문제점을 해결하기 위한 것으로서, 광효율을 극대화하고 개구율을 향상시킬 수 있는 액정 표시 소자를 제공함에 그 목적 이 있다.Accordingly, an object of the present invention is to provide a liquid crystal display device capable of maximizing light efficiency and improving aperture ratio.

도 1은 종래의 액정 표시 소자를 나타낸 평면도.1 is a plan view showing a conventional liquid crystal display device.

도 2는 본 발명의 실시예에 따른 액정 표시 소자를 나타낸 평면도.2 is a plan view showing a liquid crystal display device according to an embodiment of the present invention.

도 3은 본 발명의 실시예에 따른 액정 표시 소자의 제조방법을 설명하기 위한 도 2의 Ⅲ-Ⅲ' 선에 따른 단면도.3 is a cross-sectional view taken along line III-III ′ of FIG. 2 for explaining a method of manufacturing a liquid crystal display device according to an exemplary embodiment of the present invention.

〔도면의 주요 부분에 대한 부호의 설명〕[Description of Code for Major Parts of Drawing]

10 : 절연기판 11, 12 : 게이트 절연막10: insulating substrate 11, 12: gate insulating film

20 : 게이트 라인 70 : 데이터 라인20: gate line 70: data line

70a : 드레인 70b : 소오스70a: Drain 70b: Source

80 : 화소전극 200 : 스토리지 전극80 pixel electrode 200 storage electrode

210 : 스토리지 캐패시터 버스라인210: storage capacitor busline

B : 광차단영역B: light blocking area

상기 목적을 달성하기 위한 본 발명에 따른 액정 표시 소자는 게이트 라인; 게이트 라인과 매트릭스 형태로 배열된 데이터 라인; 게이트 라인과 데이터 라인의 교차부분에 형성된 박막 트랜지스터; 게이트 라인 및 데이터 라인에 의해 형성된 공간에 배치된 화소전극; 게이트 라인과 소정 부분 이격되고 게이트 라인과 나란하게 배치된 스토리지 캐패시터 버스라인; 및, 스토리지 캐패시터 버스라인의 하부에서 스토리지 캐피시터와 소정 부분 연결되어 배치됨과 더불어 화소전극의 일부와 오버랩된 투명한 스토리지 전극을 포함한다.Liquid crystal display device according to the present invention for achieving the above object is a gate line; A data line arranged in a matrix form with the gate line; A thin film transistor formed at an intersection of the gate line and the data line; A pixel electrode disposed in a space formed by the gate line and the data line; A storage capacitor busline spaced apart from the gate line and disposed parallel to the gate line; And a transparent storage electrode disposed under the storage capacitor bus line and connected to the storage capacitor in a predetermined portion and overlapping a portion of the pixel electrode.

또한, 스토리지 캐패시터 버스라인은 광차단영역 내에 배치되고, 스토리지 캐패시터 버스라인은 게이트 라인과 동일한 물질, 바람직하게 MoW막으로 이루어지고, 스토리지 전극은 ITO막으로 이루어진다.In addition, the storage capacitor bus line is disposed in the light blocking region, the storage capacitor bus line is made of the same material as the gate line, preferably a MoW film, and the storage electrode is made of an ITO film.

이하, 첨부된 도면을 참조하여 본 발명의 실시예를 설명한다.Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.

도 2는 본 발명의 실시예에 따른 액정 표시 소자를 나타낸 평면도이고, 도 3은 도 2의 Ⅲ-Ⅲ' 선에 따른 단면도로서, 도 2 및 도 3에서 도 1에서와 동일한 구성에 대해서는 동일한 도면 부호를 부여한다.2 is a plan view illustrating a liquid crystal display device according to an exemplary embodiment of the present invention, and FIG. 3 is a cross-sectional view taken along line III-III 'of FIG. 2, and the same configuration as in FIG. 1 in FIGS. 2 and 3 is the same. Give a sign.

도 2를 참조하면, 유리기판과 같은 투명한 절연기판(미도시) 상에 게이트 라인(20)과 데이터 라인(70)이 매트릭스 형태로 배열된다. 게이트 라인(20) 주변의 블랙 매트릭스에 의해 차단되는 광차단영역(B) 내에 게이트 라인(20)과 소정 부분 이격되고 게이트 라인(20)과 나란한 스토리지 캐패시터 버스라인(210)이 배열된다. 여기서, 스토리지 캐패시터 버스라인(210)은 게이트 라인(20)과 동일한 물질, 예컨대 MoW막과 같은 불투명 금속막으로 이루어진다. 또한, 스토리지 캐패시터 버스라인(210)의 하부에는 스토리지 캐패시터 버스라인(210)과 연결되어 화소영역의 일부와 오버랩된 스토리지 전극(200)이 배치됨으로써, 이후 설명할 화소전극과 스토리지 캐패시터를 이룬다. 여기서, 스토리지 전극(200)은 ITO막과 같은 투명 금속막으로 이루어진다. 게이트 라인(20)과 데이터 라인(70)이 교차하는 부분에 게이트 라인(20) 및 데이터 라인(70)에 연결된 박막 트랜지스터(100)가 배열된다. 또한, 게이트 라인(20) 및 데이터 라인(70)에 의해 형성된 공간에 게이트 라인(20) 및 데이터 라인(70)과 소정부분 이격됨과 더불어 박막 트랜지스터(100)의 소오스(70b)와 연결되어 화소전극(80)이 배열된다.Referring to FIG. 2, the gate line 20 and the data line 70 are arranged in a matrix form on a transparent insulating substrate (not shown) such as a glass substrate. In the light blocking region B, which is blocked by the black matrix around the gate line 20, a storage capacitor bus line 210 spaced apart from the gate line 20 and parallel to the gate line 20 is arranged. Here, the storage capacitor bus line 210 is made of the same material as the gate line 20, for example, an opaque metal film such as a MoW film. In addition, a storage electrode 200 connected to the storage capacitor bus line 210 and overlapped with a portion of the pixel area is disposed below the storage capacitor bus line 210 to form a storage capacitor with the pixel electrode to be described later. Here, the storage electrode 200 is made of a transparent metal film such as an ITO film. The thin film transistor 100 connected to the gate line 20 and the data line 70 is arranged at the intersection of the gate line 20 and the data line 70. In addition, the predetermined spaced apart from the gate line 20 and the data line 70 in the space formed by the gate line 20 and the data line 70, and connected to the source 70b of the thin film transistor 100 to the pixel electrode 80 is arranged.

도 3을 참조하여 상기한 액정 표시 소자의 제조방법을 설명한다.A method of manufacturing the above liquid crystal display element will be described with reference to FIG. 3.

도 3을 참조하면, 유리기판과 같은 투명한 절연기판(10) 상에 투명 금속막, 예컨대 ITO막을 증착하고 패터닝하여, 스토리지 전극(200)을 형성한다. 그런 다음, 기판 전면에 불투명 금속막, 예컨대 MoW막을 증착하고, 패터닝하여 블랙 매트릭스에 의해 차단되는 영역(B)의 기판(10) 상에 게이트 라인(20)을 형성함과 동시에 게이트 라인(20)과 이격되고 광차단영역(B)내의 스토리지 전극(200)과 콘택하는 스토리지 캐패시터 버스라인(210)을 형성한다. 그러 다음 기판 전면에 이중막으로 이루어진 게이트 절연막(11, 12)을 형성하고, 도 3에 도시되지는 않았지만, 박막 트랜지스터(100; 도 2참조)를 형성하고, 게이트 절연막(12) 상에 스토리지 전극(200)과 오버랩하면서 박막 트랜지스터(100)와 연결되도록 화소전극(20)을 형성한다.Referring to FIG. 3, a storage metal 200 is formed by depositing and patterning a transparent metal film, such as an ITO film, on a transparent insulating substrate 10 such as a glass substrate. Then, an opaque metal film, such as a MoW film, is deposited on the entire surface of the substrate and patterned to form the gate line 20 on the substrate 10 in the region B, which is blocked by the black matrix. The storage capacitor bus line 210 is formed to be spaced apart from and in contact with the storage electrode 200 in the light blocking region B. Then, gate insulating films 11 and 12 formed of double layers are formed on the entire surface of the substrate, and although not shown in FIG. The pixel electrode 20 is formed to overlap the 200 and be connected to the thin film transistor 100.

상기한 본 발명에 의하면, 스토리지 전극이 투명한 ITO막으로 이루어지고, 스토리지 캐패시터 버스라인은 광차단영역에 배열되기 때문에, 개구율이 향상될 뿐만 아니라 광효율이 향상된다. 또한, ITO막으로 이루어진 스토리지 전극이 MoW막으로 이루어진 스토리지 캐패시터 버스라인과 콘택되므로 ITO막의 사용으로 인한 신호지연이 방지된다.According to the present invention described above, since the storage electrode is made of a transparent ITO film and the storage capacitor busline is arranged in the light blocking region, not only the aperture ratio is improved but also the light efficiency is improved. In addition, since the storage electrode made of the ITO film contacts the storage capacitor bus line made of the MoW film, signal delay due to the use of the ITO film is prevented.

또한, 본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 요지를 벗어나지 않는 범위내에서 다양하게 변형시켜 실시할 수 있다.In addition, this invention is not limited to the said Example, It can variously deform and implement within the range which does not deviate from the technical summary of this invention.

Claims (5)

게이트 라인; 상기 게이트 라인과 매트릭스 형태로 배열된 데이터 라인; 상기 게이트 라인과 데이터 라인의 교차부분에 형성된 박막 트랜지스터; 및, 상기 게이트 라인 및 데이터 라인에 의해 형성된 공간에 배치된 화소전극에 있어서,Gate lines; Data lines arranged in a matrix form with the gate lines; A thin film transistor formed at an intersection of the gate line and the data line; And a pixel electrode disposed in a space formed by the gate line and the data line. 상기 게이트 라인과 소정 부분 이격되고 상기 게이트 라인과 나란하게 배치된 스토리지 캐패시터 버스라인; 및,A storage capacitor bus line spaced apart from the gate line and disposed in parallel with the gate line; And, 상기 스토리지 캐패시터 버스라인의 하부에서 상기 스토리지 캐피시터와 소정 부분 연결되어 배치됨과 더불어 상기 화소전극의 일부와 오버랩된 투명한 스토리지 전극을 포함하는 것을 특징으로 하는 액정 표시 소자.And a transparent storage electrode disposed below and connected to the storage capacitor at a portion below the storage capacitor bus line and overlapping a portion of the pixel electrode. 제 1 항에 있어서, 상기 스토리지 캐패시터 버스라인은 광차단영역 내에 배치된 것을 특징으로 하는 액정 표시 소자.The liquid crystal display of claim 1, wherein the storage capacitor bus line is disposed in a light blocking area. 제 1 항 또는 제 2 항에 있어서, 상기 스토리지 캐패시터 버스라인은 상기 게이트 라인과 동일한 물질로 이루어진 것을 특징으로 하는 액정 표시 소자.The liquid crystal display device of claim 1, wherein the storage capacitor bus line is made of the same material as the gate line. 제 3 항에 있어서, 상기 스토리지 캐패시터 버스라인과 상기 게이트 라인은 MoW막으로 이루어진 것을 특징으로 하는 액정 표시 소자.The liquid crystal display of claim 3, wherein the storage capacitor bus line and the gate line are formed of a MoW film. 제 1 항에 있어서, 상기 스토리지 전극은 ITO막으로 이루어진 것을 특징으로 하는 액정 표시 소자.The liquid crystal display of claim 1, wherein the storage electrode is made of an ITO film.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100426185B1 (en) * 2000-12-22 2004-04-06 엘지.필립스 엘시디 주식회사 Liquid crystal display and fabricating method thereof and method of compensating picture quality the same
KR100767357B1 (en) * 2000-09-22 2007-10-17 삼성전자주식회사 thin film transistor array panel for liquid crystal display and manufacturing method thereof
US7535520B2 (en) 2005-11-07 2009-05-19 Samsung Electronics, Co., Ltd. Thin film transistor array panel for liquid crystal display

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JPH0540271A (en) * 1991-08-06 1993-02-19 Nec Corp Active matrix type liquid crystal display element array
JPH05265035A (en) * 1992-03-18 1993-10-15 Sanyo Electric Co Ltd Liquid crystal display device
KR970022448A (en) * 1995-10-20 1997-05-28 구자홍 Structure and Manufacturing Method of Liquid Crystal Display
KR19980010550U (en) * 1996-08-08 1998-05-15 박춘길 Bicycle forward drive
KR19990052415A (en) * 1997-12-22 1999-07-05 김영환 LCD and its repair method

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Publication number Priority date Publication date Assignee Title
JPH0540271A (en) * 1991-08-06 1993-02-19 Nec Corp Active matrix type liquid crystal display element array
JPH05265035A (en) * 1992-03-18 1993-10-15 Sanyo Electric Co Ltd Liquid crystal display device
KR970022448A (en) * 1995-10-20 1997-05-28 구자홍 Structure and Manufacturing Method of Liquid Crystal Display
KR19980010550U (en) * 1996-08-08 1998-05-15 박춘길 Bicycle forward drive
KR19990052415A (en) * 1997-12-22 1999-07-05 김영환 LCD and its repair method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100767357B1 (en) * 2000-09-22 2007-10-17 삼성전자주식회사 thin film transistor array panel for liquid crystal display and manufacturing method thereof
KR100426185B1 (en) * 2000-12-22 2004-04-06 엘지.필립스 엘시디 주식회사 Liquid crystal display and fabricating method thereof and method of compensating picture quality the same
US7535520B2 (en) 2005-11-07 2009-05-19 Samsung Electronics, Co., Ltd. Thin film transistor array panel for liquid crystal display

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