KR960039128A - Semiconductor atmospheric chemical vapor deposition system - Google Patents

Semiconductor atmospheric chemical vapor deposition system Download PDF

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Publication number
KR960039128A
KR960039128A KR1019950009320A KR19950009320A KR960039128A KR 960039128 A KR960039128 A KR 960039128A KR 1019950009320 A KR1019950009320 A KR 1019950009320A KR 19950009320 A KR19950009320 A KR 19950009320A KR 960039128 A KR960039128 A KR 960039128A
Authority
KR
South Korea
Prior art keywords
gas
supply line
purge
line
vapor deposition
Prior art date
Application number
KR1019950009320A
Other languages
Korean (ko)
Other versions
KR0156640B1 (en
Inventor
박해수
Original Assignee
문정환
엘지반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체 주식회사 filed Critical 문정환
Priority to KR1019950009320A priority Critical patent/KR0156640B1/en
Publication of KR960039128A publication Critical patent/KR960039128A/en
Application granted granted Critical
Publication of KR0156640B1 publication Critical patent/KR0156640B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

본 발명은 휘발성 가스의 공급한 다음 퍼지할 때 가스라인이 오염되는 것을 방지하도록 한 반도체 소자의 제조장치에 관한 것으로, 다수의 밸브를 가진 실린더의 가슬 반응로에 공급하도록 연결된 가스공급라인과 퍼지용 N2공급라인을 가진 기존의 상압화학 기상증착 장치에서, 반응로측에 연결된 가스공급라인에 연결된 휘발성 가스버닝용 세정기와 진공펌프를 추가로 설치하여 진공으로 가스라인의 잔류분을 퍼지하여 제거하도록 구성하고, 퍼지용 N2공급시간을 조절하는 시간조절부를 가스공급라인과 퍼지용 N2공급라인의 개폐용 밸브에 접속시켜 구성한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an apparatus for manufacturing a semiconductor device which prevents contamination of a gas line when a volatile gas is supplied and then purged. In the existing atmospheric pressure chemical vapor deposition apparatus having an N 2 supply line, an additional volatile gas burning scrubber and a vacuum pump connected to the gas supply line connected to the reactor side are installed to purge and remove the residue of the gas line by vacuum. And a time control unit for adjusting the purge N 2 supply time to the gas supply line and the opening / closing valve of the purge N 2 supply line.

Description

반도체 상압화학 기상증착 장치Semiconductor atmospheric chemical vapor deposition system

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 반도체 소자 제조장치 계통도, 제2도는 본 발명의 반도체 소자 제조장치 계통도.1 is a schematic diagram of a conventional semiconductor device manufacturing apparatus, and FIG. 2 is a schematic diagram of a semiconductor device manufacturing apparatus according to the present invention.

Claims (2)

다수의 밸브를 가진 실린더의 가스를 반응로에 공급하도록 연결된 가스공급라인과 퍼지용 N2공급라인을 가진 기존의 반도체 소자의 제조를 위한 상압화학 기상증착 장치에 있어서, 반응로측에 연결된 가스공급라인에 연결된 휘발성가스버닝용 세정기와 진공펌프를 추가로 설치하여 진공으로 가스라인의 잔류분을 퍼지하여 제거하도록 구성한 것을 특징으로 하는 반도체 소자의 제조장치.In the atmospheric pressure chemical vapor deposition apparatus for manufacturing a conventional semiconductor device having a gas supply line connected to supply a gas of a cylinder having a plurality of valves to the reactor and a N 2 supply line for purging, the gas supply connected to the reactor side A device for manufacturing a semiconductor device, characterized in that the volatile gas burning scrubber connected to the line and a vacuum pump are additionally installed to purge and remove residuals of the gas line by vacuum. 제1항에 있어서, 상기 퍼지용 N2공급시간을 조절하는 시간조절부를 가스공급라인과 퍼지용 N2공급라인의 개폐용 밸브에 접속시켜 구성한 것을 특징으로 하는 반도체 소자의 제조장치.The apparatus for manufacturing a semiconductor device according to claim 1, wherein the time control unit for adjusting the purge N 2 supply time is connected to a gas supply line and an opening / closing valve of the purge N 2 supply line. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019950009320A 1995-04-20 1995-04-20 Atmosphere chemical vapor deposition apparatus of semiconductor KR0156640B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950009320A KR0156640B1 (en) 1995-04-20 1995-04-20 Atmosphere chemical vapor deposition apparatus of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950009320A KR0156640B1 (en) 1995-04-20 1995-04-20 Atmosphere chemical vapor deposition apparatus of semiconductor

Publications (2)

Publication Number Publication Date
KR960039128A true KR960039128A (en) 1996-11-21
KR0156640B1 KR0156640B1 (en) 1998-12-01

Family

ID=19412572

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950009320A KR0156640B1 (en) 1995-04-20 1995-04-20 Atmosphere chemical vapor deposition apparatus of semiconductor

Country Status (1)

Country Link
KR (1) KR0156640B1 (en)

Also Published As

Publication number Publication date
KR0156640B1 (en) 1998-12-01

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