KR960039191A - Novellus device - Google Patents

Novellus device Download PDF

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Publication number
KR960039191A
KR960039191A KR1019950007980A KR19950007980A KR960039191A KR 960039191 A KR960039191 A KR 960039191A KR 1019950007980 A KR1019950007980 A KR 1019950007980A KR 19950007980 A KR19950007980 A KR 19950007980A KR 960039191 A KR960039191 A KR 960039191A
Authority
KR
South Korea
Prior art keywords
line
novellus
supplying
supply
nitride
Prior art date
Application number
KR1019950007980A
Other languages
Korean (ko)
Other versions
KR0167240B1 (en
Inventor
백덕기
Original Assignee
문정환
엘지반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체 주식회사 filed Critical 문정환
Priority to KR1019950007980A priority Critical patent/KR0167240B1/en
Publication of KR960039191A publication Critical patent/KR960039191A/en
Application granted granted Critical
Publication of KR0167240B1 publication Critical patent/KR0167240B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 반도체 웨이퍼에 보호막을 증착시키기 위하여 나이트라이드(Nitride)공정과 옥사이드(Oxide)공정을 동시할 수 있는 노벨러스(Novellus)장치에 관한 것으로, N2를 공급하기 위한 A1라인과 N2O를 공급하기 위한 B1라인을 포함하여서 구성되어 공정가스를 챔버(100)에 공급하는 노벨러스장치에 있어서, 상기 A1라인과 B1라인을 연결하는 공급라인(200)을 설치하고, 상기 공급라인(200)에 매뉴얼 밸브(210)를 설치하여 B1라인의 N2O가 소진될시 공급라인에 설치되어 있는 매뉴얼 밸브를 열어 A1라인의 N2를 B1라인에 공급함으로써 장비가 다운되지 않고 나이트라이드 공정을 진행할 수 있도록 한 것이다.The present invention is a nitride (Nitride) step and the oxide (Oxide) relates to a Novellus (Novellus) apparatus capable of simultaneous processes, A1 line and the N 2 O for supplying N 2 to deposit a protective film on the semiconductor wafer In the Novellus apparatus including a B1 line for supplying and supplying a process gas to the chamber 100, a supply line 200 for connecting the A1 line and the B1 line is installed, and in the supply line 200. When the manual valve 210 is installed and the N 2 O of the B1 line is exhausted, the manual valve installed in the supply line is opened and the N 2 of the A1 line is supplied to the B1 line to proceed the nitride process without down. It would be.

Description

노벨러스장치Novellus device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명 노벨러스 장치의 구성을 보인 배관도.2 is a piping diagram showing the configuration of the Novellus device of the present invention.

Claims (1)

N2를 공급하기 위한 A1라인과 N2O를 공급하기 위한 B1라인을 포함하여서 구성되어 공정가스를 챔버에 공급하는 노벨러스장치에 있어서, 상기 A1라인과 B1라인을 연결하는 공급라인을 설치하고, 상기 공급라인에 매뉴얼 밸브를 설치하여 B1라인의 N2O가 소진될시 A1라인에서 N2를 공급할 수 있도록 구성된 것을 특징으로 하는 노벨러스 장치.In the Novellus apparatus including an A1 line for supplying N 2 and a B1 line for supplying N 2 O to supply a process gas to the chamber, a supply line connecting the A1 line and the B1 line is installed. Novellus device characterized in that the manual valve is installed in the supply line is configured to supply N 2 in the A1 line when the N 2 O of the B1 line is exhausted. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950007980A 1995-04-06 1995-04-06 Apparatus for supplying gas in deposition equipment of semiconductor insulating film KR0167240B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950007980A KR0167240B1 (en) 1995-04-06 1995-04-06 Apparatus for supplying gas in deposition equipment of semiconductor insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950007980A KR0167240B1 (en) 1995-04-06 1995-04-06 Apparatus for supplying gas in deposition equipment of semiconductor insulating film

Publications (2)

Publication Number Publication Date
KR960039191A true KR960039191A (en) 1996-11-21
KR0167240B1 KR0167240B1 (en) 1999-02-01

Family

ID=19411631

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950007980A KR0167240B1 (en) 1995-04-06 1995-04-06 Apparatus for supplying gas in deposition equipment of semiconductor insulating film

Country Status (1)

Country Link
KR (1) KR0167240B1 (en)

Also Published As

Publication number Publication date
KR0167240B1 (en) 1999-02-01

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