KR980005403A - Plasma processing apparatus of semiconductor element - Google Patents

Plasma processing apparatus of semiconductor element Download PDF

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Publication number
KR980005403A
KR980005403A KR1019960023903A KR19960023903A KR980005403A KR 980005403 A KR980005403 A KR 980005403A KR 1019960023903 A KR1019960023903 A KR 1019960023903A KR 19960023903 A KR19960023903 A KR 19960023903A KR 980005403 A KR980005403 A KR 980005403A
Authority
KR
South Korea
Prior art keywords
processing apparatus
plasma processing
chamber
semiconductor element
semiconductor device
Prior art date
Application number
KR1019960023903A
Other languages
Korean (ko)
Inventor
이상면
박종호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960023903A priority Critical patent/KR980005403A/en
Publication of KR980005403A publication Critical patent/KR980005403A/en

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Abstract

본 발명에 의한 반도체 소자의 플라즈마 처리 장치는 챔버 내부의 가스를 펌핑 아웃하는 배기라인과 상기 챔버가 연결되는 부분에 전압을 인가함으로써, 종래와 같이 플라즈마 공정후 상기 챔버내에 남아있는 파티클이 웨이퍼 표면에 부착되는 현상을 방지할 수 있다.In the plasma processing apparatus of the semiconductor device according to the present invention, by applying a voltage to an exhaust line for pumping out the gas inside the chamber and a portion where the chamber is connected, particles remaining in the chamber after the plasma process, as in the prior art, are applied to the wafer surface. The phenomenon of sticking can be prevented.

Description

반도체 소자의 플라즈마 처리 장치.Plasma processing apparatus of a semiconductor element.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 의한 반도체 소자의 플라즈마 처리 장치를 나타낸 블럭도이다.1 is a block diagram showing a plasma processing apparatus of a semiconductor device according to the present invention.

Claims (1)

반도체 소자에 플라즈마(Plasma) 처리 공정을 실시하는 챔버(Chamber)와 배기 라인이 접속하는 부분에 전압원을 연결함으로써, 상기 전압원으로부터 인가된 전압에 의해 상기 챔버내의 가스 및 파티클(Particle)을 상기 배기라인으로 펌핑 아웃(Pumping Out)하는 것을 특징으로 하는 반도체 소자의 플라즈마 처리 장치.By connecting a voltage source to a portion where the chamber and the exhaust line, which perform a plasma treatment process, are connected to the semiconductor device, the gas and particles in the chamber are discharged by the voltage applied from the voltage source. A plasma processing apparatus for a semiconductor device, characterized in that the pumping out (Pumping Out). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023903A 1996-06-26 1996-06-26 Plasma processing apparatus of semiconductor element KR980005403A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023903A KR980005403A (en) 1996-06-26 1996-06-26 Plasma processing apparatus of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023903A KR980005403A (en) 1996-06-26 1996-06-26 Plasma processing apparatus of semiconductor element

Publications (1)

Publication Number Publication Date
KR980005403A true KR980005403A (en) 1998-03-30

Family

ID=66288425

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960023903A KR980005403A (en) 1996-06-26 1996-06-26 Plasma processing apparatus of semiconductor element

Country Status (1)

Country Link
KR (1) KR980005403A (en)

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