KR950004426A - Cleaning Method of Chemical Vapor Deposition Membrane - Google Patents
Cleaning Method of Chemical Vapor Deposition Membrane Download PDFInfo
- Publication number
- KR950004426A KR950004426A KR1019930014361A KR930014361A KR950004426A KR 950004426 A KR950004426 A KR 950004426A KR 1019930014361 A KR1019930014361 A KR 1019930014361A KR 930014361 A KR930014361 A KR 930014361A KR 950004426 A KR950004426 A KR 950004426A
- Authority
- KR
- South Korea
- Prior art keywords
- reaction chamber
- vapor deposition
- chemical vapor
- cleaning
- gas
- Prior art date
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- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 불필요한 부위에 형성된 막을 제거하기 위한 화학기상증착막의 크리닝 방법에 있어서, 플라즈마를 이용한 크리닝시 냉각수의 흐름을 차단하여 반응실 벽의 온도를 상승시키고, 반응실내의 가스배출 벨브를 최대한 열어주어 설정 압력을 O mTorr로 하는 단계와, 플라즈마 크리닝 공정후 SiH4가스를 반응실내로 유입시켜 NF3가스와 반응하게 하여 잔류 가스를 제거하는 단계를 포함하여 이루어짐으로써 본 발명은 반응실내의 진공도가 증진됨으로써 플라즈마 크리닝후 고진공을 위한 회복시간이 감소되어 장비가동 효율이 증대되고, 또한 오염입자 발생률이 감소됨으로써 수율증대의 효과를 얻을 수 있다.The present invention provides a method for cleaning a chemical vapor deposition membrane for removing a film formed on an unnecessary portion, by blocking the flow of cooling water during the cleaning using plasma to increase the temperature of the reaction chamber wall, open the gas discharge valve in the reaction chamber to the maximum The present invention comprises the step of setting the set pressure to O mTorr, and the step of introducing the SiH 4 gas into the reaction chamber after the plasma cleaning process to react with the NF 3 gas to remove the residual gas to improve the vacuum in the reaction chamber As a result, the recovery time for high vacuum after plasma cleaning is reduced, thereby increasing the operation efficiency of the equipment, and reducing the generation rate of contaminants, thereby increasing the yield.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930014361A KR950004426A (en) | 1993-07-27 | 1993-07-27 | Cleaning Method of Chemical Vapor Deposition Membrane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930014361A KR950004426A (en) | 1993-07-27 | 1993-07-27 | Cleaning Method of Chemical Vapor Deposition Membrane |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950004426A true KR950004426A (en) | 1995-02-18 |
Family
ID=67142927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930014361A KR950004426A (en) | 1993-07-27 | 1993-07-27 | Cleaning Method of Chemical Vapor Deposition Membrane |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950004426A (en) |
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1993
- 1993-07-27 KR KR1019930014361A patent/KR950004426A/en not_active Application Discontinuation
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