KR950004426A - Cleaning Method of Chemical Vapor Deposition Membrane - Google Patents

Cleaning Method of Chemical Vapor Deposition Membrane Download PDF

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Publication number
KR950004426A
KR950004426A KR1019930014361A KR930014361A KR950004426A KR 950004426 A KR950004426 A KR 950004426A KR 1019930014361 A KR1019930014361 A KR 1019930014361A KR 930014361 A KR930014361 A KR 930014361A KR 950004426 A KR950004426 A KR 950004426A
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KR
South Korea
Prior art keywords
reaction chamber
vapor deposition
chemical vapor
cleaning
gas
Prior art date
Application number
KR1019930014361A
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Korean (ko)
Inventor
강영묵
진병주
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930014361A priority Critical patent/KR950004426A/en
Publication of KR950004426A publication Critical patent/KR950004426A/en

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  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 불필요한 부위에 형성된 막을 제거하기 위한 화학기상증착막의 크리닝 방법에 있어서, 플라즈마를 이용한 크리닝시 냉각수의 흐름을 차단하여 반응실 벽의 온도를 상승시키고, 반응실내의 가스배출 벨브를 최대한 열어주어 설정 압력을 O mTorr로 하는 단계와, 플라즈마 크리닝 공정후 SiH4가스를 반응실내로 유입시켜 NF3가스와 반응하게 하여 잔류 가스를 제거하는 단계를 포함하여 이루어짐으로써 본 발명은 반응실내의 진공도가 증진됨으로써 플라즈마 크리닝후 고진공을 위한 회복시간이 감소되어 장비가동 효율이 증대되고, 또한 오염입자 발생률이 감소됨으로써 수율증대의 효과를 얻을 수 있다.The present invention provides a method for cleaning a chemical vapor deposition membrane for removing a film formed on an unnecessary portion, by blocking the flow of cooling water during the cleaning using plasma to increase the temperature of the reaction chamber wall, open the gas discharge valve in the reaction chamber to the maximum The present invention comprises the step of setting the set pressure to O mTorr, and the step of introducing the SiH 4 gas into the reaction chamber after the plasma cleaning process to react with the NF 3 gas to remove the residual gas to improve the vacuum in the reaction chamber As a result, the recovery time for high vacuum after plasma cleaning is reduced, thereby increasing the operation efficiency of the equipment, and reducing the generation rate of contaminants, thereby increasing the yield.

Description

화학기상증착막의 크리닝 방법Cleaning Method of Chemical Vapor Deposition Membrane

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (3)

반도체 소자의 제조공정중 화학기상증착막 형성시 불필요한 부위에 형성된 막을 제거하기 위한 화학기상증착막의 크리닝 방법에 있어서, 플라즈마를 이용한 크리닝시 냉각수의 흐름을 차단하여 반응실 벽의 온도를 상승시키고, 반응실내의 가스배출 벨브를 최대한 열어주어 설정 압력을 0 mToor로 하는 단계와, 플라즈마 크리닝 공정후 SiH4가스를 반응실내로 유입시켜 NF3가스와 반응하게 하여 잔류 가스를 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 화학기상증착막의 크리닝 방법.In the method of cleaning a chemical vapor deposition film for removing a film formed on an unnecessary portion during the formation of a chemical vapor deposition film during the manufacturing process of a semiconductor device, the temperature of the reaction chamber wall is raised by blocking the flow of cooling water during the cleaning using plasma. Opening the gas discharge valve as much as possible to set the set pressure to 0 mToor, and introducing the SiH 4 gas into the reaction chamber after the plasma cleaning process to react with the NF 3 gas to remove residual gas. Cleaning method of chemical vapor deposition film to be. 제1항에 있어서, 상기 반응실 벽의 온도는 30℃ 이상인 것을 특징으로 하는 화학기상증착막의 크리닝 방법.The method of claim 1, wherein the temperature of the reaction chamber wall is 30 ℃ or more. 제1항에 있어서, 상기 화학기상증착막은 텅스텐(W)막인 것을 특징으로 하는 화학기상증착막의 크리닝 방법.The method of claim 1, wherein the chemical vapor deposition film is a tungsten (W) film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930014361A 1993-07-27 1993-07-27 Cleaning Method of Chemical Vapor Deposition Membrane KR950004426A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930014361A KR950004426A (en) 1993-07-27 1993-07-27 Cleaning Method of Chemical Vapor Deposition Membrane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930014361A KR950004426A (en) 1993-07-27 1993-07-27 Cleaning Method of Chemical Vapor Deposition Membrane

Publications (1)

Publication Number Publication Date
KR950004426A true KR950004426A (en) 1995-02-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930014361A KR950004426A (en) 1993-07-27 1993-07-27 Cleaning Method of Chemical Vapor Deposition Membrane

Country Status (1)

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KR (1) KR950004426A (en)

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