KR950027914A - Method for preventing contamination of chemical vapor deposition film - Google Patents

Method for preventing contamination of chemical vapor deposition film Download PDF

Info

Publication number
KR950027914A
KR950027914A KR1019940005518A KR19940005518A KR950027914A KR 950027914 A KR950027914 A KR 950027914A KR 1019940005518 A KR1019940005518 A KR 1019940005518A KR 19940005518 A KR19940005518 A KR 19940005518A KR 950027914 A KR950027914 A KR 950027914A
Authority
KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
reaction chamber
preventing contamination
deposition film
Prior art date
Application number
KR1019940005518A
Other languages
Korean (ko)
Inventor
김준업
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019940005518A priority Critical patent/KR950027914A/en
Publication of KR950027914A publication Critical patent/KR950027914A/en

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 화학기상증착 장비를 이용한 박막 형성시 반응실벽 등 기판외의 원하지 않는 부위에 형성된 막을 제거학 위한 화학기상증착막의 오염방지 방법에 관한 것으로 냉각수의 흐름을 차단하여 반응실 벽의 온도를 40℃이상 상승시키는 단계; 반응실의 가스 밸브를 최대한 열어주어 0mTorr로 하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 반응실 내의 진공도가 증진됨으로써 화학기상증착막의 오염을 막고, 플라즈마 크리닝 후 고진공을 위한 회복 시간이 감소되어 장비가동 효율이 증대되는 효과를 얻을 수 있다.The present invention relates to a method for preventing contamination of chemical vapor deposition membranes for removing films formed on unwanted portions of the substrate, such as reaction chamber walls, when forming thin films using chemical vapor deposition equipment. Elevating step; By opening the gas valve of the reaction chamber to the maximum to 0mTorr characterized in that the present invention is to improve the vacuum in the reaction chamber to prevent contamination of the chemical vapor deposition membrane, the recovery time for high vacuum after plasma cleaning is reduced The effect of increasing the efficiency of equipment operation can be obtained.

Description

화학기상 증착막의 오염방지 방법Method for preventing contamination of chemical vapor deposition film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

화학기상증착 장비를 이용한 박막 형성시 반응실벽 등기판외의 원하지 않는 부위에 형성된 막을 제거하기 위한 플라즈마를 이용한 화학기상증착막의 오염방지 방법에 있어서, 냉각수의 흐름을 차단하여 반응실 벽의 온도를 40℃이상 상승시키는 단계; 반응실의 가스 밸브를 최대한 열어 주어 0mTorr로 하는 단계를 포함하여 이루어지는 것을 특징으로 하는 화학기상증착막의 오염방지 방법In the method of preventing contamination of chemical vapor deposition membrane using plasma to remove the film formed on the reaction chamber wall substrate other than the unwanted part during thin film formation using chemical vapor deposition equipment, the temperature of the reaction chamber wall is blocked by blocking the flow of cooling water. Elevating step; Method of preventing chemical vapor deposition membrane comprising the step of opening the gas valve of the reaction chamber to the maximum 0mTorr 제1항에 있어서, 플라즈마 크리닝 공정 후 SiH4가스를 반응실 내로 주입하여 잔류가스를 제거하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 화학기상증착막의 오염방지 방법The method of claim 1, further comprising removing the residual gas by injecting SiH 4 gas into the reaction chamber after the plasma cleaning process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940005518A 1994-03-18 1994-03-18 Method for preventing contamination of chemical vapor deposition film KR950027914A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940005518A KR950027914A (en) 1994-03-18 1994-03-18 Method for preventing contamination of chemical vapor deposition film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940005518A KR950027914A (en) 1994-03-18 1994-03-18 Method for preventing contamination of chemical vapor deposition film

Publications (1)

Publication Number Publication Date
KR950027914A true KR950027914A (en) 1995-10-18

Family

ID=66689759

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940005518A KR950027914A (en) 1994-03-18 1994-03-18 Method for preventing contamination of chemical vapor deposition film

Country Status (1)

Country Link
KR (1) KR950027914A (en)

Similar Documents

Publication Publication Date Title
EP0047002B1 (en) Plasma etching apparatus
KR970008333A (en) Method for cleaning residues from chemical vapor deposition (CVD) apparatus
KR102481860B1 (en) Technique to prevent aluminum fluoride build up on the heater
US5861065A (en) Nitrogen trifluoride-oxygen thermal cleaning process
KR0175688B1 (en) Plasma ashing method with oxygen pretreatment
KR20070068556A (en) Cleaning method of apparatus for depositing al-containing metal film and al-containing metal nitride film
KR910005405A (en) Improved Cleaning Process for Removing Stacks from Susceptors in Chemical Vapor Deposition Devices
KR960039224A (en) High-speed ashing method
KR20130105308A (en) Deposition chamber cleaning using in situ activation of molecular fluorine
KR100769514B1 (en) Method of manufacturing semiconductor devices
KR950027914A (en) Method for preventing contamination of chemical vapor deposition film
JP2002060951A (en) Gas reaction to eliminate contaminant in cvd chamber
JP2013541187A (en) Cleaning chemical vapor deposition chambers using molecular fluorine.
KR950004426A (en) Cleaning Method of Chemical Vapor Deposition Membrane
US20100024845A1 (en) Process and apparatus for degreasing objects or materials by means of oxidative free radicals
KR960702185A (en) Stripping, passivation and CORROSION INHIBITION OF SEMICONDUCTOR SUBSTRATES
JPH09148255A (en) Cleaning method in reaction container
KR20060002807A (en) Method for cleaning heat treatment apparatus
JP2002060950A (en) Method for improving chemical vapor deposition processing
JP2001168033A (en) Semiconductor manufacturing device
JPS6128371B2 (en)
KR960006688B1 (en) Pollution source eleminating method of lpcvd reaction chamber
KR20020074390A (en) Method for etching carbon thin film and etching apparatus
KR19990053265A (en) Low Pressure Chemical Vapor Deposition of Semiconductors
JPH07106301A (en) Plasma processing unit

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination