KR960000138Y1 - By product eliminating apparatus of lpcvd system - Google Patents
By product eliminating apparatus of lpcvd system Download PDFInfo
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- KR960000138Y1 KR960000138Y1 KR2019930007995U KR930007995U KR960000138Y1 KR 960000138 Y1 KR960000138 Y1 KR 960000138Y1 KR 2019930007995 U KR2019930007995 U KR 2019930007995U KR 930007995 U KR930007995 U KR 930007995U KR 960000138 Y1 KR960000138 Y1 KR 960000138Y1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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Abstract
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Description
제 1 도는 일반적인 저압화학기상증착 시스템의 계통도1 is a schematic diagram of a general low pressure chemical vapor deposition system.
제 2 도는 본 고안의 부산물 제거장치가 적용된 저압화학기상증착 시스템의 계통도2 is a schematic diagram of a low pressure chemical vapor deposition system to which the byproduct removal device of the present invention is applied.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
3 : 공정실 4 : 진공배관3: process room 4: vacuum piping
5 : 진공펌프 21: 히팅챔버5: vacuum pump 21: heating chamber
22 : 히팅코일 23 : 콜드트랩(Cold Trap)22: heating coil 23: cold trap
본 고안은 저압화학기상증착 시스템(LPCVD System)의 부산물 제거장치에 관함 것으로, 특히 질화규소필름(Si3N4Film)증착공정시 발생되는 부산물(NH4CL)을 분해 하여 제거함으로써 공정안정화 및 장비가동율향상에 기여하도록 한 저압화학기상증착 시스템의 부산물 제거장치에 관한 것이다.The present invention relates to a by-product removal device of LPCVD system, in particular, process stabilization and equipment by decomposing and removing by-products (NH 4 CL) generated during the deposition process of silicon nitride film (Si 3 N 4 Film). The present invention relates to an apparatus for removing by-products of a low pressure chemical vapor deposition system that contributes to an improvement in operation rate.
일반적으로 저압화학기상증착 시스템은 제 1 도에 도시한 바와같이, 웨이퍼가 수납되는 석영튜브(1) 및 이 석영튜브(1)를 감싸도록 설치되어 공정온도(약 800℃)를 유지시켜 주는 히팅코일(2)을 가지는 공정실(3)과, 상기 공정실(3)의 진공도를 유지시켜 주는 진공배관(4) 및 그 단부에 연결된 진공펌프(5)와, 상기 진공배관(4)의 도중에 착설되어 공정실(3)과 진공펌프(5)를 요구되는 시점에 격리시켜 주는 게이트 밸브(6)와. 상기 공정실(3)의 진공도를 감지하는 압력감지기(Capacitance Mano Meter)(7)와, 상기 공정실(3)에 공정가스를 공급하기 위한 공정성가스 공급라인계(8) 및 진공펌프 배기관 (9)과 메인 배기덕트 사이에 연결되어 배기되는 가스의 유해성분을 걸러내는 가스 스크러버(Gas Scrubber)(10)로 크게 구성되 있으며, 상기 공정가스 공급라인계(8)는 하부의 가스저장 실린더(11)(11')와 공정실(3)을 연결하는 가스공급배관(12) 및 그 가스 공급배관(12)의 도중에 장착되어 공정시 요구되는 가스흐름량을 정밀조절하여 공정실(3)에 공급하는 유량조절밸브(13)(13')로 구성되어 있고, 상기 가스공급배관(12)에는 수개의 공압밸브(14)들이 착설되어 있다.In general, a low pressure chemical vapor deposition system, as shown in FIG. 1, is installed to surround a quartz tube (1) in which a wafer is stored and the quartz tube (1) to maintain a process temperature (about 800 ° C.) The process chamber 3 which has the coil 2, the vacuum piping 4 which maintains the vacuum degree of the said process chamber 3, the vacuum pump 5 connected to the edge part, and the vacuum piping 4 in the middle A gate valve 6 which is installed and isolates the process chamber 3 and the vacuum pump 5 at the required time. Capacity Mano Meter (7) for detecting the vacuum degree of the process chamber (3), process gas supply line system (8) and vacuum pump exhaust pipe (9) for supplying process gas to the process chamber (3) ) Is largely composed of a gas scrubber 10 connected between the main exhaust duct and the exhaust gas to filter out harmful components of the exhaust gas, and the process gas supply line system 8 includes a lower gas storage cylinder 11. 11 'and the gas supply pipe 12 connecting the process chamber 3 and the gas supply pipe 12 are mounted in the middle of the gas supply pipe 12 to precisely control the amount of gas flow required for the process to supply the process chamber 3 It consists of the flow control valves 13 and 13 ', and several pneumatic valves 14 are installed in the gas supply pipe 12.
도면중 미설명 부호 15는 공정실 도어를 보인 것이고, 16은 퍼지용 질소라인을 보인 것이다.In the figure, reference numeral 15 denotes a process chamber door, and 16 denotes a purge nitrogen line.
이하, 상기와 같이 구성된 일반적인 저압화학기상증착 시스템의 동작을 설명한다.Hereinafter, the operation of the general low pressure chemical vapor deposition system configured as described above.
먼저, 게이트밸브(6)를 닫은 상태에서 공정실(3) 내부로 질소가스를 주입하여 대기압 분위기를 조정한 후 도어(15)를 열고 웨이퍼를 로딩한다.First, nitrogen gas is injected into the process chamber 3 while the gate valve 6 is closed to adjust the atmospheric pressure atmosphere, and then the door 15 is opened to load the wafer.
이와 같은 상태에서 게이트밸브(6)를 개방하면 진공펌프(5)의 펌핑동작에 의해 공정실(3)은 진공상태가 된다.When the gate valve 6 is opened in this state, the process chamber 3 is in a vacuum state by the pumping operation of the vacuum pump 5.
공정실(3)의 진공상태가 배이스 베큠(5x10-3 Torr이하) 상태가 되고, 온도가 800℃±1℃가 되면, 게이트밸브(6)롤 닫고 약 5분간 누수점검을 한다(이때 누수레이트가 10mTorr/min 이내로 되어야 한다) 누수레이트가 정상이면 게이트밸브(6)를 개방하여 메이스진공 상태가 되도록 재 펌핑한다.When the vacuum of the process chamber 3 becomes a basin vacuum (5x10-3 Torr or less) and the temperature reaches 800 ° C ± 1 ° C, the gate valve 6 is closed and the leak check is performed for about 5 minutes (at this time, the leak rate). Should be within 10 mTorr / min) If the leak rate is normal, open the gate valve (6) and re-pump to the mace vacuum.
이어서, 가스공급배관(12)의 각 공압밸브(14)들을 조작하여 NH3가스와 SiH2CI2가스를 유량조절벨브(13)(13')를 통해 공정실(3)로 주입시킨다.Subsequently, the pneumatic valves 14 of the gas supply pipe 12 are operated to inject NH 3 gas and SiH 2 CI 2 gas into the process chamber 3 through the flow control valves 13 and 13 ′.
이와같은 동작으로 공정실에서는 3SiH2CI2+6NH3→Si3N4+2NH4CL+4HCI ↑ +6H2↑ 의 화학반응이 일어나면서 소정증착 공정이 이루어지는바, 상기식의 반응물중 Si3N4물질은 웨이퍼에 증착되고, 그 나머지 부산물은 진공펌프(5)의 펌핑작용에 의해 빠져 나가계 되는네. 여기서.HCI, H₂는 기체로서 펌프(5)내부로 유입되었다가 걸러진 후 메인배기 덕트로 배기된다.In the same operation process chamber 3SiH 2 CI 2 + 6NH 3 → Si 3 N 4 + 2NH 4 CL + 4HCI ↑ + 6H The reaction of 2 ↑ up while Si 3 of a predetermined deposition process is made bar, a reaction product of the formula N 4 material is deposited on the wafer and the remaining by-products are drawn off by the pumping action of the vacuum pump (5). Wherein .HCI, H ₂ are then was introduced into the pump 5 as filtered gas is discharged to the main discharge duct.
그러나, NH4CL은 분말형태로 펌프(5)쪽으로 나오면서 상대적으로 온도가 낮은 배관(4)내벽, 게이트밸브(6)내부 및 압력감지기(7) 내부등에 증착되고, 증착되지 않은 나머지는 펌프(5) 내부로 유입되게 잔류하게 된다.However, NH 4 CL is deposited on the inner wall of the pipe 4, inside the gate valve 6, inside the pressure sensor 7, etc., as the powder comes out to the pump 5 in the form of powder, and the remaining undeposited pump ( 5) It remains to flow into the inside.
공정이 완료되면, 공정가스공급이 중장되면서 질소가스가 흘러 가스라인올 퍼지(Purge)한다.When the process is completed, purge the gas line all the nitrogen gas flow while the process gas supply is heavy.
퍼지타임이 끝나면, 게이트 밸브(6)를 닫고 공정실(3) 내부롤 대기압 상태로 형성한 후, 공정실 도어(15)를열고, 공정완료된 웨이퍼롤 언로딩 시키는 것으로 1사이클의 공정을 완료하는 것이다.At the end of the purge time, the gate valve 6 is closed and the process chamber 3 is formed at atmospheric pressure. Then, the process chamber door 15 is opened and the finished wafer roll is unloaded. will be.
그러나, 상기한 바와같은 일반적인 저압화학 기상증착 시스템에 있어서는 진공배관(4), 게이트밸브(6)의 내부, 압력감지기(7) 및 펌프(5) 내부에 분말상태의 공정부산물이 증착되거나 잔류하게 됨에 따라 1) 공정실의 진공상태가 나빠지고, 2)게이트밸브(6)의 오픈/클로우즈 동작상태가 불량해지며, 3) 압력감지기(7)의 진공도 감지능력이 떨어질 뿐만 아니라 4) 펌프(5)의 오염으로 인해 펌프분해검사(Over haul) 주기가 짧아짐과 아울러 펌핑능력이 저하되는 문제가 있었다.However, in the general low pressure chemical vapor deposition system described above, powdery process byproducts are deposited or remain in the vacuum pipe 4, the gate valve 6, the pressure sensor 7, and the pump 5. As a result, 1) the vacuum of the process chamber is deteriorated, 2) the open / close operation of the gate valve 6 becomes poor, 3) the vacuum sensor of the pressure sensor 7 is not only degraded, but 4) the pump ( Due to the contamination of 5), the pump overhaul cycle was shortened and the pumping capacity was reduced.
또, 각 오염된 파트의 주기적인 세척 및 압력감지기(7)의 빈번함 교체등으로 인하여 장비의 보수유지 비용이 높아지고, 장비 가동율이 저하되는 단점이 있었다.In addition, due to the periodic cleaning of each contaminated part and the frequent replacement of the pressure sensor (7), the maintenance cost of the equipment is high, and the operation rate of the equipment is lowered.
이를 감안하여 안출한 본 고안 주목적은 공정시 발생되는 공정부산물인 NH4CI를 열분해 하여 기체 상태로 전, 배출시킴과 아울러 열분해되지 않은 나머지 NH4CI를 냉각포집 시킴으로써 공정부산물을 완전제거 할수있도록 한 저압화학기상증착 시스템의 부산물 제거장치를 제공함에 있다.In view of this, the main object of the present invention is low pressure chemical to completely remove process by-products by pyrolysing NH 4 CI, which is a process by-product generated during the process, to be transferred and discharged to a gaseous state, and by cooling and collecting the remaining NH 4 CI that is not pyrolyzed. The present invention provides an apparatus for removing by-products of a vapor deposition system.
본 고안의 다른 목적은 공정부산물을 완선제거함으로써 공정부산물이 여러 부품의 내벽에 증착되거나 진공펌프내에 잔류하지 않게함으로써 각 부품의 세척주기를 연장하고, 교체주기를 연장시키는 등 장비의 보수유지 비용을 낮춤과 아울러 장비 가동율의 향상을 기한 수 있도록 한 저압화학기상증착 시스템의 부산물 제거장치를 제공하는데 있다.Another object of the present invention is to eliminate the process by-products so that the process by-products are not deposited on the inner wall of the various parts or remain in the vacuum pump, thereby extending the cleaning period of each part and extending the replacement period. It is to provide a by-product removal device of a low pressure chemical vapor deposition system that allows lowering and improving equipment utilization rate.
상기와 같은 본 고안의 목적을 달성하기 위하여 저압화학기상증착 시스템의 공정실과 진공펌프롤 연결하는 진공배관의 도중에 공정시 발생되는 공정부산물을 열분해하여 기체화 시키기 의한 히팅챔버 및 히팅코일을 가지는 부산물 열분해 수단올 설치함과 아울러 그 부산물 열분해 수단의 후방부에 히팅챔버에서 분해되지 않은 부산물을 포집하기 위한 콜드트랩을 설치하여 공정부산물을 완전 제거하도록 구성함을 특징으로 하는 저압화학기상증착 시스템의 부산물 제거장치가 제공된다.In order to achieve the object of the present invention as described above, by-product pyrolysis having a heating chamber and a heating coil by pyrolyzing and evaporating the process by-products generated during the process in the middle of the vacuum pipe connecting the process chamber of the low pressure chemical vapor deposition system and the vacuum pump roll. By-product removal and by-product removal of the low pressure chemical vapor deposition system, characterized in that the cold trap for collecting the undecomposed by-products in the heating chamber at the rear of the by-product pyrolysis means to completely remove the process by-products An apparatus is provided.
상기와 같이 된 본 고안 장치에 의하면, 공정시 발생되는 공정부산물(NH4CL)이 일부는 기체화되어 배기되고, 기체화되지않은 부산물은 콜드 트랩에 의해 포집되어 완전 제거되므로 진공배관 내벽에 부산물이 증착되는 양이 현저하게 격감되는 등 여러부품의 부산물 증착량이 줄어들게 되어 공정실의 진공상태가 좋아질 뿐만 아니라 게이트밸브 및 압력감지기의 사용수명을 연장할 수 있으며, 이에 따라 공정의 안경화, 장비의 보수유지비용절감 및 장비 가동율을 향상시킬수 있다는 효과가 있고, 또 펌프의 내부오염이 현격히 감소하게 되므로 펌프의 분해 검사주기가 길어지며 펌핑능력이 향상되는 등의 효과를 기대할 수 있다.According to the device of the present invention as described above, part of the process by-product (NH 4 CL) generated during the process is gasified and exhausted, and by-products that are not vaporized are collected by the cold trap and completely removed, so that the by-products on the inner wall of the vacuum pipe are removed. The amount of by-product deposition of various parts is reduced such that the amount of deposition is significantly reduced, which not only improves the vacuum state of the process chamber but also extends the service life of the gate valve and the pressure sensor. It is effective in reducing maintenance cost and improving equipment operation rate. Also, since the internal pollution of the pump is greatly reduced, the overhaul period of the pump is long and the pumping capacity can be improved.
이하, 본 고안에 의함 저압화학기상증착 시스템의 부산물 제거장치를 첨부도면에 의거하여 보다 상세히 설명한다.Hereinafter, the by-product removing device of the low pressure chemical vapor deposition system according to the present invention will be described in more detail based on the accompanying drawings.
제 2 도는 본 고안 장치가 적용된 저압화한기상증착 시스템의 계통도로서 이에 도시한 바와같이 ; 본 고안 저압화학기상증착 시스템의 부산물 제거장치는 공정실(3)과 진공펌프(5)를 연결하는 진공배관(4)의 도중에 공정시발생되는 공정부산물인 NH4CL을 열분해하여 기체화시키기 위한 히팅챔버(21) 및 히팅코일(22)을 가지는 부산물 열분해 수단과, 상기 히팅챔버(21)에서 열분해 되지 않는 부산물을 포집함과 아울러 배기온도를 낮추는콜드트랩(cold trap)(23)을 설치하여 공정부산물을 완전제거하도록 구성한 것으로, 그외 저압화학기상증착 시스템 구성하는 기본 구조는 종래와 같으므로 동일한 부분에 대해서는 동일부호를 부여하고 여기서는 상세한 설명을 생략한다.2 is a schematic diagram of a low pressure vapor deposition system to which the device of the present invention is applied; The by-product removal device of the low pressure chemical vapor deposition system of the present invention is used to pyrolyze and gasify NH 4 CL, a process by-product generated during the process, in the middle of the vacuum pipe 4 connecting the process chamber 3 and the vacuum pump 5. By-product pyrolysis means having a heating chamber 21 and the heating coil 22, and a cold trap (23) for collecting the by-products that do not pyrolyze in the heating chamber 21 and lowers the exhaust temperature Since the process by-products are completely removed, the basic structure of the low pressure chemical vapor deposition system is the same as in the related art, and the same reference numerals are used for the same parts, and detailed description thereof will be omitted.
이하에서는 본 고안 장치의 동작을 저압화학기상증착 시스템에 연관하여 설명한다.Hereinafter, the operation of the device of the present invention will be described in connection with a low pressure chemical vapor deposition system.
기본동작, 즉 게이트밸브(6)를 닫은 상태에서 공정실(3) 내부로 질소가스를 주입하여 대기압 분위기로 조성한 후 도어(15)를 열고 웨이퍼를 로딩한다.After the basic operation, that is, the nitrogen gas is injected into the process chamber 3 while the gate valve 6 is closed to form an atmospheric pressure atmosphere, the door 15 is opened and the wafer is loaded.
이와같은 상태에서 게이트밸브(6)를 개방하면 진공펌프(5)의 펌핑동작에 의해 공정실(3)은 진공상대가 된다.When the gate valve 6 is opened in such a state, the process chamber 3 becomes a vacuum partner by the pumping operation of the vacuum pump 5.
공정실(3) 진공상태가 베이스 베큠(5×10-3Torro이하) 상태가 되고, 온도가 800℃±1℃가 되면, 게이트밸브 (6)를 닫고 약 5분간 누수점검을 한다 (이때 누수레이트가 10mTorr/min 이내로 되어야 한다) 누수레이트가 정상이면 게이트밸브(6)를 개방하여 배이스진공상태가 되도록 재 펌핑한다.When the vacuum in the process chamber (3) becomes the base vacuum (5 × 10 -3 Torro or less) and the temperature reaches 800 ° C ± 1 ° C, close the gate valve 6 and check for leaks for about 5 minutes (at this time, leak The rate should be within 10 mTorr / min.) If the leak rate is normal, open the gate valve (6) and re-pump so that it is in basal vacuum.
이어서, 가스공급배관(12)의 각 공압밸브(14)들을 조작하여 NH3가스와 SiH2CI2가스를 유량조정밸브(13)(13')를 통해 공정실(3)로 주입시킨다.Subsequently, the pneumatic valves 14 of the gas supply pipe 12 are operated to inject NH 3 gas and SiH 2 CI 2 gas into the process chamber 3 through the flow control valves 13 and 13 ′.
이와같은 동작으로 공정실에서는 3SiH2CI2+6NH3→Si3N4+2NH4CL+4HCI ↑ +6H2↑ 의 화학반응이 일어나면서 소정증착 공정이 이루어지는바, 상기식의 반응물중 Si3N4물질은 웨이퍼에 증착되고, 그 나머지 부산물은 진공펌프(5)의 펌핑작용에 의해 빠져 나가가는 기본 동작은 종래와 같으나, 배기 과정에 있어서, 종래에는분말상태의 공정부산물들이 진공배관(4) 내벽, 게이트밸브(6) 및 압력감지기 (7)등의 내벽에 증착되였으나, 본고안에서는 분말상태의 공정부산물이 히팅챔버(21)를 지나면서 열분해 되어 기체상태로 펌프(5)로 배기되고, 상기 히팅챔버(21)를 지나면서도 분해되지 않은 나머지 부산물은, 클드트랩(23)에 포집된다.In the same operation process chamber 3SiH 2 CI 2 + 6NH 3 → Si 3 N 4 + 2NH 4 CL + 4HCI ↑ + 6H The reaction of 2 ↑ up while Si 3 of a predetermined deposition process is made bar, a reaction product of the formula N 4 material is deposited on the wafer, and the remaining by-products are discharged by the pumping action of the vacuum pump 5 as in the conventional operation, but in the exhaust process, the process by-products in the powder state are conventionally piped (4). ) Deposited on the inner wall, the gate valve (6) and the pressure sensor (7), but in this paper, the powdered by-products are pyrolyzed while passing through the heating chamber (21) and exhausted to the pump (5) in a gaseous state. The remaining by-products that are not decomposed while passing through the heating chamber 21 are collected in the clad trap 23.
따라서, 공정 부산물이 여러부품에 증착되지 않게되고, 진공펌프(5) 내부로 거의 유입되지 않게 되는 것이다.Therefore, the process by-products are not deposited in various parts, and hardly flow into the vacuum pump 5.
이후, 공정이 완료되면, 공정가스 공급을 중단시킴과 아울러 가스라인을 퍼지시킨후, 공정실(3) 내부 압력을 대기압 상태로 전환하고, 공정완료된 웨이퍼를 언로딩하는 것으로 1싸이클의 공정을 안료하는 것이다.After the process is completed, the process gas supply is stopped, the gas line is purged, the pressure inside the process chamber 3 is changed to atmospheric pressure, and the unprocessed wafer is unloaded. It is.
이상에서와 같이, 본 고안의 부산물 제거장치에 의하면, 공정시 발생되는 분말상태의 공정부산물인 NH4CL이 일부는 기체화되어 HCI.H2와 함께 배기턱트로 배기되고, 기체화되지 않은 나머지 부산물은 콜드트랩에 의해 포집되어 완전제거되므로 진공배관 내벽에 부산물이 증착되는 양이 현저하게 격감되는 등 여러부품의 부산물증착량이 줄어들게 되어 공정실의 진공상태가 좋아질 뿐만 아니라 게이트밸브 및 압력감지기의 사용수명을 연장할 수 있으며, 이에따라 공정의 안정화, 장비보수유지 비용의 절감 및 장비가동을을 향상시킬 수 있다는 효과가 있고 또 펌프의 내부오염이 현격히 감소되므로 펌프의 분해검사 주기가 길어지며 펌핑능력이 향상되는 등의 효과를 얻을 수 있게 된다.As described above, according to the by-product removal device of the present invention, the NH 4 CL, which is a process by-product of the powder state generated during the process is gasified and exhausted along with HCI.H 2 to the exhaust duct, the remaining ungasified By-products are collected by cold traps and completely removed, which reduces the amount of by-product deposition on the inner wall of the vacuum pipe, which significantly reduces the amount of by-product deposition, which improves the vacuum in the process chamber and uses gate valves and pressure sensors. The service life can be extended, and the process stabilization, equipment maintenance cost reduction and equipment operation can be improved, and the internal pollution of the pump is greatly reduced, so the overhaul cycle of the pump is long and the pumping capacity is increased. It is possible to obtain effects such as improvement.
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| KR2019930007995U KR960000138Y1 (en) | 1993-05-13 | 1993-05-13 | By product eliminating apparatus of lpcvd system |
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