KR960035858A - 실리콘에 테이퍼진 개구부를 형성하기 위한 방법 - Google Patents

실리콘에 테이퍼진 개구부를 형성하기 위한 방법 Download PDF

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Publication number
KR960035858A
KR960035858A KR1019960005640A KR19960005640A KR960035858A KR 960035858 A KR960035858 A KR 960035858A KR 1019960005640 A KR1019960005640 A KR 1019960005640A KR 19960005640 A KR19960005640 A KR 19960005640A KR 960035858 A KR960035858 A KR 960035858A
Authority
KR
South Korea
Prior art keywords
silicon
opening
input gas
introducing
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019960005640A
Other languages
English (en)
Korean (ko)
Inventor
휴 린 장
Original Assignee
빈센트 비. 인그라시아
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 비. 인그라시아, 모토로라 인코포레이티드 filed Critical 빈센트 비. 인그라시아
Publication of KR960035858A publication Critical patent/KR960035858A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
KR1019960005640A 1995-03-06 1996-02-29 실리콘에 테이퍼진 개구부를 형성하기 위한 방법 Withdrawn KR960035858A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39924595A 1995-03-06 1995-03-06
US399,245 1995-03-06

Publications (1)

Publication Number Publication Date
KR960035858A true KR960035858A (ko) 1996-10-28

Family

ID=23578769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960005640A Withdrawn KR960035858A (ko) 1995-03-06 1996-02-29 실리콘에 테이퍼진 개구부를 형성하기 위한 방법

Country Status (5)

Country Link
US (1) US5651858A (https=)
JP (1) JPH08250485A (https=)
KR (1) KR960035858A (https=)
SG (1) SG40837A1 (https=)
TW (1) TW297919B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2644912B2 (ja) * 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
USD453402S1 (en) 1990-08-22 2002-02-05 Hitachi, Ltd. Vacuum processing equipment configuration
USRE39823E1 (en) * 1990-08-29 2007-09-11 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
USD473354S1 (en) 1990-08-29 2003-04-15 Hitachi, Ltd. Vacuum processing equipment configuration
US7089680B1 (en) 1990-08-29 2006-08-15 Hitachi, Ltd. Vacuum processing apparatus and operating method therefor
USRE39756E1 (en) * 1990-08-29 2007-08-07 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
TW388100B (en) 1997-02-18 2000-04-21 Hitachi Ulsi Eng Corp Semiconductor deivce and process for producing the same
US6008131A (en) * 1997-12-22 1999-12-28 Taiwan Semiconductor Manufacturing Company Ltd. Bottom rounding in shallow trench etching using a highly isotropic etching step
KR100702723B1 (ko) * 2001-06-22 2007-04-03 동경 엘렉트론 주식회사 드라이 에칭 방법
US7514328B2 (en) * 2003-06-26 2009-04-07 Mears Technologies, Inc. Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween
US7332737B2 (en) * 2004-06-22 2008-02-19 Micron Technology, Inc. Isolation trench geometry for image sensors
US8703619B2 (en) * 2012-01-19 2014-04-22 Headway Technologies, Inc. Taper-etching method and method of manufacturing near-field light generator
US9985094B2 (en) * 2013-12-27 2018-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Super junction with an angled trench, transistor having the super junction and method of making the same
US9865471B2 (en) * 2015-04-30 2018-01-09 Tokyo Electron Limited Etching method and etching apparatus
US20250299928A1 (en) * 2022-12-13 2025-09-25 Hitachi High-Tech Corporation Plasma processing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702795A (en) * 1985-05-03 1987-10-27 Texas Instruments Incorporated Trench etch process
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
JPS62224687A (ja) * 1986-03-25 1987-10-02 Anelva Corp エツチング方法
US5118384A (en) * 1990-04-03 1992-06-02 International Business Machines Corporation Reactive ion etching buffer mask

Also Published As

Publication number Publication date
JPH08250485A (ja) 1996-09-27
SG40837A1 (en) 1997-06-14
US5651858A (en) 1997-07-29
TW297919B (https=) 1997-02-11

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000