KR960029717U - 반도체 장치의 웨이퍼 뒷면 냉각가스 공급장치 - Google Patents

반도체 장치의 웨이퍼 뒷면 냉각가스 공급장치

Info

Publication number
KR960029717U
KR960029717U KR2019950002670U KR19950002670U KR960029717U KR 960029717 U KR960029717 U KR 960029717U KR 2019950002670 U KR2019950002670 U KR 2019950002670U KR 19950002670 U KR19950002670 U KR 19950002670U KR 960029717 U KR960029717 U KR 960029717U
Authority
KR
South Korea
Prior art keywords
wafer
gas supply
cooling gas
semiconductor device
supply device
Prior art date
Application number
KR2019950002670U
Other languages
English (en)
Other versions
KR0127586Y1 (ko
Inventor
서범문
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019950002670U priority Critical patent/KR0127586Y1/ko
Publication of KR960029717U publication Critical patent/KR960029717U/ko
Application granted granted Critical
Publication of KR0127586Y1 publication Critical patent/KR0127586Y1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR2019950002670U 1995-02-18 1995-02-18 반도체 장치의 웨이퍼 뒷면 냉각가스 공급장치 KR0127586Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019950002670U KR0127586Y1 (ko) 1995-02-18 1995-02-18 반도체 장치의 웨이퍼 뒷면 냉각가스 공급장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950002670U KR0127586Y1 (ko) 1995-02-18 1995-02-18 반도체 장치의 웨이퍼 뒷면 냉각가스 공급장치

Publications (2)

Publication Number Publication Date
KR960029717U true KR960029717U (ko) 1996-09-17
KR0127586Y1 KR0127586Y1 (ko) 1998-12-01

Family

ID=19408083

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950002670U KR0127586Y1 (ko) 1995-02-18 1995-02-18 반도체 장치의 웨이퍼 뒷면 냉각가스 공급장치

Country Status (1)

Country Link
KR (1) KR0127586Y1 (ko)

Also Published As

Publication number Publication date
KR0127586Y1 (ko) 1998-12-01

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