KR960026966A - Gate structure of transistor and manufacturing method thereof - Google Patents
Gate structure of transistor and manufacturing method thereof Download PDFInfo
- Publication number
- KR960026966A KR960026966A KR1019940035442A KR19940035442A KR960026966A KR 960026966 A KR960026966 A KR 960026966A KR 1019940035442 A KR1019940035442 A KR 1019940035442A KR 19940035442 A KR19940035442 A KR 19940035442A KR 960026966 A KR960026966 A KR 960026966A
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- insulating layer
- layer
- gate electrode
- gate insulating
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체 소자 제조공정 중 게이트절연층/게이트전극층으로 이루어지는 트랜지스터의 게이트 구조 및 그 제조방법에 관한 것으로, 특히 게이트절연층의 열화를 방지하기 위해 게이트절연층(26), 제1게이트전극(27), 제2게이트전극(277)이 적층되되, 게이트절연층(26)의 하부 가장자리 일부분이 식각되어 T형 구조를 이루며, 사이 게이트절연층의 식각부위를 매우면서 전체표면을 따라 제2게이트전극(277)이 형성된 구조를 포함하여 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gate structure of a transistor comprising a gate insulating layer / gate electrode layer and a method of manufacturing the same. In particular, the gate insulating layer 26 and the first gate electrode ( 27) the second gate electrode 277 is stacked, and a portion of the lower edge of the gate insulating layer 26 is etched to form a T-type structure, and the second gate is formed along the entire surface while forming an etched portion of the gate insulating layer 26. It characterized in that it comprises a structure in which the electrode 277 is formed.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 일실시예에 따른 게이트의 구조를 나타내는 단면도, 제3A도 내지 제3C도는 본 발명의 일실시예에 따른 게이트 형성 공정 단면도.2 is a cross-sectional view illustrating a structure of a gate according to an embodiment of the present invention, and FIGS. 3A to 3C are cross-sectional views of a gate forming process according to an embodiment of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035442A KR960026966A (en) | 1994-12-20 | 1994-12-20 | Gate structure of transistor and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035442A KR960026966A (en) | 1994-12-20 | 1994-12-20 | Gate structure of transistor and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026966A true KR960026966A (en) | 1996-07-22 |
Family
ID=66688207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940035442A KR960026966A (en) | 1994-12-20 | 1994-12-20 | Gate structure of transistor and manufacturing method thereof |
Country Status (1)
Country | Link |
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KR (1) | KR960026966A (en) |
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1994
- 1994-12-20 KR KR1019940035442A patent/KR960026966A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |