KR960026852A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a capacitor of a semiconductor device, wherein a lower insulating layer, a first insulating layer, and a second insulating layer are sequentially formed on an upper surface of a semiconductor substrate, and the second insulating layer is etched using a mask larger than a contact mask thereon. Next, a first conductive layer spacer is formed on sidewalls of the second insulating layer, the second insulating layer is removed, and then a contact hole for exposing the semiconductor substrate is formed using the first conductive layer spacer as a mask. After forming a second conductive layer connected to a predetermined portion of the predetermined thickness, the surface area is increased by etching the second conductive layer using a storage electrode mask and forming a third conductive layer spacer connected to the second conductive layer. High integration of semiconductor devices is possible by forming storage electrodes and capacitors that can ensure sufficient capacitance in later processes. A technique to it and thereby improve the reliability of the semiconductor device according.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

2A to 2D are sectional views showing a capacitor manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (8)

Sequentially forming a lower insulating layer and a first insulating film on the semiconductor substrate, forming a second insulating film on the first insulating film, forming a first photoresist film pattern on the second insulating film, Etching the second insulating layer using the first photoresist pattern, removing the first photoresist pattern, forming a first conductive layer spacer on the sidewall of the second insulating layer, and forming the second insulating layer Forming a contact hole by etching the lower insulating layer using the first conductive layer spacer and the first insulating layer as a mask, and a second conductive layer connected to the semiconductor substrate through the contact hole. Forming a second photosensitive film pattern on the second conductive layer, etching the second conductive layer using the second photosensitive film pattern as a mask, and forming the second conductive layer and the second conductive layer 2 dimming The step of forming the third conductive layer patterns on the side wall spacer and the capacitor manufacturing method of the semiconductor device which forms the second of the surface area by removing the second photosensitive film pattern increases storage electrode. The method of claim 1, wherein the first insulating layer is formed of a material having a predetermined difference in etching selectivity from the second insulating layer. The method of claim 1, wherein the predetermined portion is an impurity diffusion region. The method of claim 1, wherein the first, second and third conductive layers are formed of a polycrystalline silicon film. The method of claim 1, wherein the first photoresist pattern is larger than a contact mask. The method of claim 1, wherein the contact hole is adjusted as a thickness of the first conductive layer spacer. The method of claim 1, wherein the second photoresist pattern is formed by an etching process using a storage electrode mask. The method of claim 1, wherein the removing of the second insulating layer is performed by a wet method using a difference in etching selectivity between the first conductive layer spacer and the first insulating layer. ※ Note: The disclosure is based on the initial application.