KR960026466A - Polyside layer formation method of semiconductor device - Google Patents

Polyside layer formation method of semiconductor device Download PDF

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Publication number
KR960026466A
KR960026466A KR1019940032857A KR19940032857A KR960026466A KR 960026466 A KR960026466 A KR 960026466A KR 1019940032857 A KR1019940032857 A KR 1019940032857A KR 19940032857 A KR19940032857 A KR 19940032857A KR 960026466 A KR960026466 A KR 960026466A
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KR
South Korea
Prior art keywords
layer
semiconductor device
forming
polyside
polysilicon layer
Prior art date
Application number
KR1019940032857A
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Korean (ko)
Inventor
박인옥
서광수
정영석
이창진
김의식
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940032857A priority Critical patent/KR960026466A/en
Publication of KR960026466A publication Critical patent/KR960026466A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 폴리사이드층 형성방법에 있어서, 전도성 폴리실리콘층을 형성한 후, 그 상부에 형성되어 있는 산화층을 제거하는 단계 ; 상기 산화층을 제거한 동일한 공정챔버에서 상기 폴리실리콘층 상에 실리사이드층을 형성하는 단계를 포함하는 것을 특징으로 하여, 폴리실리콘층과 실리사이드층과의 계면 특성을 향상시키고, 이에 따라 제품의 품질과 수율을 향상시킬 수 있는 특유의 효과가 있는 반도체 소자 폴리사이드층 형성방법에 관한 것이다.The present invention provides a method for forming a polyside layer of a semiconductor device, comprising: forming a conductive polysilicon layer and then removing an oxide layer formed on the conductive polysilicon layer; And forming a silicide layer on the polysilicon layer in the same process chamber from which the oxide layer is removed, thereby improving the interfacial property between the polysilicon layer and the silicide layer, thereby improving product quality and yield. A semiconductor device polyside layer forming method having a specific effect that can be improved.

Description

반도체 소자의 폴리사이드층 형성방법Polyside layer formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

반도체 소자의 폴리사이드층 형성방법에 있어서, 전도성 폴리실리콘층을 형성한 후, 그 상부에 형성되어 있는 산화층을 제거하는 단계; 상기 산화층을 제거한 동일한 공정챔버에서 상기 폴리실리콘층 상에 실리사이드층을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 폴리사이드층 형성방법.A method for forming a polyside layer of a semiconductor device, the method comprising: removing an oxide layer formed on an upper portion of a conductive polysilicon layer; Forming a silicide layer on the polysilicon layer in the same process chamber from which the oxide layer is removed. 제1항에 있어서, 상기 전도성 폴리실리콘층 상부에 형성되어 있는 산화층은, NF3개스, F2Ar개스, C2F6개스, CF4개스 중 어느 하나를 이용하여 제거하는 것을 특징으로 하는 반도체 소자의 폴리사이드층 형성방법.The semiconductor according to claim 1, wherein the oxide layer formed on the conductive polysilicon layer is removed using any one of NF 3 gas, F 2 Ar gas, C 2 F 6 gas, and CF 4 gas. Method for forming a polyside layer of the device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940032857A 1994-12-05 1994-12-05 Polyside layer formation method of semiconductor device KR960026466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940032857A KR960026466A (en) 1994-12-05 1994-12-05 Polyside layer formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940032857A KR960026466A (en) 1994-12-05 1994-12-05 Polyside layer formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR960026466A true KR960026466A (en) 1996-07-22

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KR1019940032857A KR960026466A (en) 1994-12-05 1994-12-05 Polyside layer formation method of semiconductor device

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KR (1) KR960026466A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000027678A (en) * 1998-10-29 2000-05-15 김영환 Method of formig polyside using plasma treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000027678A (en) * 1998-10-29 2000-05-15 김영환 Method of formig polyside using plasma treatment

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