KR960026466A - Polyside layer formation method of semiconductor device - Google Patents
Polyside layer formation method of semiconductor device Download PDFInfo
- Publication number
- KR960026466A KR960026466A KR1019940032857A KR19940032857A KR960026466A KR 960026466 A KR960026466 A KR 960026466A KR 1019940032857 A KR1019940032857 A KR 1019940032857A KR 19940032857 A KR19940032857 A KR 19940032857A KR 960026466 A KR960026466 A KR 960026466A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor device
- forming
- polyside
- polysilicon layer
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 반도체 소자의 폴리사이드층 형성방법에 있어서, 전도성 폴리실리콘층을 형성한 후, 그 상부에 형성되어 있는 산화층을 제거하는 단계 ; 상기 산화층을 제거한 동일한 공정챔버에서 상기 폴리실리콘층 상에 실리사이드층을 형성하는 단계를 포함하는 것을 특징으로 하여, 폴리실리콘층과 실리사이드층과의 계면 특성을 향상시키고, 이에 따라 제품의 품질과 수율을 향상시킬 수 있는 특유의 효과가 있는 반도체 소자 폴리사이드층 형성방법에 관한 것이다.The present invention provides a method for forming a polyside layer of a semiconductor device, comprising: forming a conductive polysilicon layer and then removing an oxide layer formed on the conductive polysilicon layer; And forming a silicide layer on the polysilicon layer in the same process chamber from which the oxide layer is removed, thereby improving the interfacial property between the polysilicon layer and the silicide layer, thereby improving product quality and yield. A semiconductor device polyside layer forming method having a specific effect that can be improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940032857A KR960026466A (en) | 1994-12-05 | 1994-12-05 | Polyside layer formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940032857A KR960026466A (en) | 1994-12-05 | 1994-12-05 | Polyside layer formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR960026466A true KR960026466A (en) | 1996-07-22 |
Family
ID=66648610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940032857A KR960026466A (en) | 1994-12-05 | 1994-12-05 | Polyside layer formation method of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR960026466A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000027678A (en) * | 1998-10-29 | 2000-05-15 | 김영환 | Method of formig polyside using plasma treatment |
-
1994
- 1994-12-05 KR KR1019940032857A patent/KR960026466A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000027678A (en) * | 1998-10-29 | 2000-05-15 | 김영환 | Method of formig polyside using plasma treatment |
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