KR960026255A - - Google Patents

Info

Publication number
KR960026255A
KR960026255A KR19950059698A KR19950059698A KR960026255A KR 960026255 A KR960026255 A KR 960026255A KR 19950059698 A KR19950059698 A KR 19950059698A KR 19950059698 A KR19950059698 A KR 19950059698A KR 960026255 A KR960026255 A KR 960026255A
Authority
KR
South Korea
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR19950059698A
Other languages
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960026255A publication Critical patent/KR960026255A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
KR19950059698A 1994-12-28 1995-12-27 Ceased KR960026255A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33871994 1994-12-28

Publications (1)

Publication Number Publication Date
KR960026255A true KR960026255A (enExample) 1996-07-22

Family

ID=18320821

Family Applications (1)

Application Number Title Priority Date Filing Date
KR19950059698A Ceased KR960026255A (enExample) 1994-12-28 1995-12-27

Country Status (3)

Country Link
US (2) US5691571A (enExample)
KR (1) KR960026255A (enExample)
CN (1) CN1088912C (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644166A (en) 1995-07-17 1997-07-01 Micron Technology, Inc. Sacrificial CVD germanium layer for formation of high aspect ratio submicron VLSI contacts
US6239029B1 (en) 1995-07-17 2001-05-29 Micron Technology, Inc. Sacrificial germanium layer for formation of a contact
US6420786B1 (en) 1996-02-02 2002-07-16 Micron Technology, Inc. Conductive spacer in a via
US5789317A (en) * 1996-04-12 1998-08-04 Micron Technology, Inc. Low temperature reflow method for filling high aspect ratio contacts
US5843839A (en) * 1996-04-29 1998-12-01 Chartered Semiconductor Manufacturing, Ltd. Formation of a metal via using a raised metal plug structure
US7126195B1 (en) * 1996-06-03 2006-10-24 Micron Technology, Inc. Method for forming a metallization layer
US5662788A (en) 1996-06-03 1997-09-02 Micron Technology, Inc. Method for forming a metallization layer
US6331482B1 (en) 1996-06-26 2001-12-18 Micron Technology, Inc. Method of VLSI contact, trench, and via filling using a germanium underlayer with metallization
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
US6016012A (en) * 1996-11-05 2000-01-18 Cypress Semiconductor Corporation Thin liner layer providing reduced via resistance
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) * 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US5844318A (en) * 1997-02-18 1998-12-01 Micron Technology, Inc. Aluminum film for semiconductive devices
US5874356A (en) * 1997-02-28 1999-02-23 Taiwan Semiconductor Manufacturing Co. Ltd. Method for forming zig-zag bordered openings in semiconductor structures
JP3456391B2 (ja) * 1997-07-03 2003-10-14 セイコーエプソン株式会社 半導体装置の製造方法
US6054768A (en) * 1997-10-02 2000-04-25 Micron Technology, Inc. Metal fill by treatment of mobility layers
US6110829A (en) * 1997-10-23 2000-08-29 Advanced Micro Devices, Inc. Ultra-low temperature Al fill for sub-0.25 μm generation of ICs using an Al-Ge-Cu alloy
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6376369B1 (en) 1998-02-12 2002-04-23 Micron Technology, Inc. Robust pressure aluminum fill process
US6638856B1 (en) * 1998-09-11 2003-10-28 Cypress Semiconductor Corporation Method of depositing metal onto a substrate
US6056864A (en) * 1998-10-13 2000-05-02 Advanced Micro Devices, Inc. Electropolishing copper film to enhance CMP throughput
US6195873B1 (en) * 1999-09-08 2001-03-06 Advanced Micro Devices, Inc. Method for decreasing contact resistance
JP3449333B2 (ja) 2000-03-27 2003-09-22 セイコーエプソン株式会社 半導体装置の製造方法
JP3480416B2 (ja) 2000-03-27 2003-12-22 セイコーエプソン株式会社 半導体装置
DE10032792A1 (de) * 2000-06-28 2002-01-17 Infineon Technologies Ag Verfahren zur Herstellung einer Verdrahtung für Kontaktlöcher
US7423347B2 (en) 2006-01-19 2008-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ deposition for cu hillock suppression
US20080119044A1 (en) * 2006-11-22 2008-05-22 Macronix International Co., Ltd. Systems and methods for back end of line processing of semiconductor circuits
US8304909B2 (en) * 2007-12-19 2012-11-06 Intel Corporation IC solder reflow method and materials
CN102339787A (zh) * 2010-07-20 2012-02-01 旺宏电子股份有限公司 降低接触孔电阻的半导体元件制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553713B2 (enExample) * 1976-01-30 1980-01-26
US4910580A (en) * 1987-08-27 1990-03-20 Siemens Aktiengesellschaft Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy
US5254872A (en) * 1989-03-14 1993-10-19 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2841976B2 (ja) * 1990-11-28 1998-12-24 日本電気株式会社 半導体装置およびその製造方法
JPH04196420A (ja) * 1990-11-28 1992-07-16 Nec Corp 半導体装置の構造及び製造方法
DE4200809C2 (de) * 1991-03-20 1996-12-12 Samsung Electronics Co Ltd Verfahren zur Bildung einer metallischen Verdrahtungsschicht in einem Halbleiterbauelement
US5270254A (en) * 1991-03-27 1993-12-14 Sgs-Thomson Microelectronics, Inc. Integrated circuit metallization with zero contact enclosure requirements and method of making the same
JPH05121727A (ja) * 1991-10-25 1993-05-18 Nec Corp 半導体装置及びその製造方法
JPH05198525A (ja) * 1992-01-21 1993-08-06 Sony Corp 配線構造及び配線の形成方法
JP2560637B2 (ja) * 1994-04-28 1996-12-04 日本電気株式会社 電界効果トランジスタ及びその製造方法
US5523259A (en) * 1994-12-05 1996-06-04 At&T Corp. Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer
JPH0955425A (ja) * 1995-08-10 1997-02-25 Mitsubishi Electric Corp 多層Ａｌ配線構造を有する半導体装置およびその製造方法
US5616519A (en) * 1995-11-02 1997-04-01 Chartered Semiconductor Manufacturing Pte Ltd. Non-etch back SOG process for hot aluminum metallizations

Also Published As

Publication number Publication date
US6114244A (en) 2000-09-05
US5691571A (en) 1997-11-25
CN1132410A (zh) 1996-10-02
CN1088912C (zh) 2002-08-07

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E801 Decision on dismissal of amendment
PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000