KR960026232A - Tungsten Plug Formation Method - Google Patents

Tungsten Plug Formation Method Download PDF

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Publication number
KR960026232A
KR960026232A KR1019940039238A KR19940039238A KR960026232A KR 960026232 A KR960026232 A KR 960026232A KR 1019940039238 A KR1019940039238 A KR 1019940039238A KR 19940039238 A KR19940039238 A KR 19940039238A KR 960026232 A KR960026232 A KR 960026232A
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KR
South Korea
Prior art keywords
tungsten
photoresist film
contact hole
tungsten plug
etching
Prior art date
Application number
KR1019940039238A
Other languages
Korean (ko)
Other versions
KR100316181B1 (en
Inventor
김명선
박병준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940039238A priority Critical patent/KR100316181B1/en
Publication of KR960026232A publication Critical patent/KR960026232A/en
Application granted granted Critical
Publication of KR100316181B1 publication Critical patent/KR100316181B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

Abstract

본 발명 텅스텐 플러그 형성방법에 관한 것으로, 콘택홀에 채워진 텅스텐 손실을 줄이기 위해 감광막을 회생막으로 사용하는 방법이며, 플러그 상부에 감광막을 마스크를 사용하여 노광 및 현상하여 콘택홀의 상부에 소량의 감광막이 남아있게 한 후, 텅스텐 식각시 플러그 상부에 잔류한 감광막에 의해 텅스텐이 과다 식각이 되지 않도록 함으로써 이후 진행될 공정인 금속배선 공정에서 텅스텐과 금속의 접촉이 용이해지도록 하여 반도소 소자의 신뢰성을 증가시킬 수 있다.The present invention relates to a method of forming a tungsten plug, wherein a method of using a photoresist film as a regenerative film to reduce tungsten loss filled in a contact hole is provided. After remaining, tungsten is not over-etched by the photoresist remaining on the top of the plug during tungsten etching, so that the contact between the tungsten and the metal is facilitated in the subsequent metal wiring process, thereby increasing the reliability of the semiconductor device. Can be.

Description

텅스텐 플러그 형성방법.Tungsten plug formation method.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A조는 내지 제2E도는 본 발명의 텅스텐 플러그 형성방법에 따라 플러그를 형성하는 공정도.2A through 2E are process drawings for forming plugs according to the tungsten plug forming method of the present invention.

Claims (4)

반도체 기판상에 하부 절연층을 형성하고 상기 절연층에 콘택홀을 형성하는단계와, 전체구조 상부에 접착층을 형성한 후 텅스텐을 일정두께로 증착하여 상기 콘택홀을 메우는 단계와, 전체구조 상부에 소정두께의 감광막을 도포하고 마스크를 이용하여 노광 및 현상을 실시하여 콘택홀의 상부에만 소량의 감광막이 남도록 하는 단계와, 식각 선택비가 낮은 플라즈마를 사용하여 텅스텐을 건식식각하는 단계를 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.Forming a lower insulating layer on the semiconductor substrate and forming a contact hole in the insulating layer, forming an adhesive layer on the entire structure, and depositing tungsten with a predetermined thickness to fill the contact hole, and And applying a photoresist film having a predetermined thickness and performing exposure and development using a mask so that a small amount of the photoresist film remains only on the upper portion of the contact hole, and dry etching tungsten using a plasma having a low etching selectivity. Tungsten plug forming method. 제1항에 있어서, 상기 플라즈마는 헥사 플루오르화 황(SF6)이 첨가된 플라즈마인 것을 특징으로 하는 텅스텐 플러그 형성방법.The method of claim 1, wherein the plasma is a plasma to which hexa sulfur fluoride (SF 6 ) is added. 제1항에 있어서, 텅스텐 식각시 콘택홀 상부에 남은 감광막의 손실을 최소화하여 식각한 후, 산소함유 플라즈마를 이용하여, 잔여 감광막을 제거하는 것을 특징으로 하는 텅스텐 플러그 형성방법.The tungsten plug forming method of claim 1, wherein after the etching of the photoresist film to minimize the loss of the photoresist film remaining on the contact hole during tungsten etching, the residual photoresist film is removed using an oxygen-containing plasma. 제1항에 있어서, 텅스텐 식각시, 텅스텐과 감광막의 식각 선택비가 1:1이 되도록 하여 식각하는 것을 특징으로 하는 텅스텐 플러그 형성방법.The tungsten plug forming method of claim 1, wherein the etching selectivity of the tungsten and the photoresist is 1: 1 so that the tungsten plug is etched. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039238A 1994-12-30 1994-12-30 Method for forming tungsten plug KR100316181B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940039238A KR100316181B1 (en) 1994-12-30 1994-12-30 Method for forming tungsten plug

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940039238A KR100316181B1 (en) 1994-12-30 1994-12-30 Method for forming tungsten plug

Publications (2)

Publication Number Publication Date
KR960026232A true KR960026232A (en) 1996-07-22
KR100316181B1 KR100316181B1 (en) 2002-04-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940039238A KR100316181B1 (en) 1994-12-30 1994-12-30 Method for forming tungsten plug

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KR (1) KR100316181B1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3190098B2 (en) * 1992-02-10 2001-07-16 株式会社東芝 Method for manufacturing semiconductor device

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Publication number Publication date
KR100316181B1 (en) 2002-04-24

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