KR960026159A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR960026159A KR960026159A KR1019940034124A KR19940034124A KR960026159A KR 960026159 A KR960026159 A KR 960026159A KR 1019940034124 A KR1019940034124 A KR 1019940034124A KR 19940034124 A KR19940034124 A KR 19940034124A KR 960026159 A KR960026159 A KR 960026159A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- forming
- imo
- metal pattern
- semiconductor device
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 제조방법에 관한 것으로, 절연막의 상부에 형성된 금속 패턴간의 간격이 좁아질 경우, 금속 패턴의 상부에 형성되는 층에서 보이드가 형성되는 것을 방지하기 위해 금속 패턴 상부에 형성되는 층을 식각하는 보이드 발생부위의 입구를 크게 한 후, 공정을 진행함으로써 보이드 발생으로 인한 반도체 소자의 불랭발생을 방지시켜 수율을 향상시키는 반도체 소자의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor device, and when the gap between the metal pattern formed on the upper portion of the insulating layer is narrowed, the layer formed on the metal pattern to prevent the formation of voids in the layer formed on the upper portion of the metal pattern The present invention relates to a method for manufacturing a semiconductor device in which the inlet of the void generation site for etching is increased, and then the process is performed to prevent uncooling of the semiconductor device due to void generation and to improve yield.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2C도는 본 발명에 따른 반도체 소자의 제조방법에 따른 공정단계를 도시한 단면도.2C is a cross-sectional view showing process steps in accordance with a method of manufacturing a semiconductor device in accordance with the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940034124A KR960026159A (en) | 1994-12-14 | 1994-12-14 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940034124A KR960026159A (en) | 1994-12-14 | 1994-12-14 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026159A true KR960026159A (en) | 1996-07-22 |
Family
ID=66688321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940034124A KR960026159A (en) | 1994-12-14 | 1994-12-14 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960026159A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040024714A (en) * | 2002-09-16 | 2004-03-22 | 아남반도체 주식회사 | Method for manufacturing multi-layered inter metal dielectric layer of semiconductor device |
-
1994
- 1994-12-14 KR KR1019940034124A patent/KR960026159A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040024714A (en) * | 2002-09-16 | 2004-03-22 | 아남반도체 주식회사 | Method for manufacturing multi-layered inter metal dielectric layer of semiconductor device |
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