KR960026124A - Apparatus and method for manufacturing large area thin film using pulsed laser - Google Patents

Apparatus and method for manufacturing large area thin film using pulsed laser Download PDF

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KR960026124A
KR960026124A KR1019940040616A KR19940040616A KR960026124A KR 960026124 A KR960026124 A KR 960026124A KR 1019940040616 A KR1019940040616 A KR 1019940040616A KR 19940040616 A KR19940040616 A KR 19940040616A KR 960026124 A KR960026124 A KR 960026124A
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thin film
target
vacuum chamber
substrate
reaction gas
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KR1019940040616A
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KR0153568B1 (en
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최정옥
김한
정효수
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김준성
사단법인 고등기술연구원 연구조합
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • C23C14/0611Diamond

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
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  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

균질한 박막을 형성하기 위한 개량된 대면적 박막 제조 장치 및 방법이 기술되어 있다. 본 발명의 대면적 박막 제조 장치는 진공조(12) 내의 일측부에 설치된 회전 가능한 타겟홀더(4)와; 상기 타겟홀더(4)에 부착된 타겟(3)과; 상기 진공조(12) 내로 반응 가스를 주입하기 위한 반응 가스 주입부(7)와; 고에너지의 레이저 빔을 상기 타겟(3)에 전달하여 이온과 원자, 분자 및 전자의 혼합체인 플룸(5)을 형성시키기 위해 진공조(12) 외부에 설치된 펄스 레이저(1)와, 상기 레이저 빔을 통과시켜 타겟(3) 표면 상에 포커싱하기 위한 광학계(2)와; 진공조(12)의 일측부에 설치된 회전 운동 가능한 회전판(10)과; 상기 회전판(10) 상에 부착된 상하, 좌우 운동이 가능한 x-y 스테이지(9)와; 상기 x-y 스테이지(9) 상에 고정된 기판(8)의 전방부에 설치된 셔터(6)로 구성된다.An improved large area thin film manufacturing apparatus and method for forming a homogeneous thin film is described. The large-area thin film manufacturing apparatus of the present invention includes a rotatable target holder 4 installed at one side in the vacuum chamber 12; A target (3) attached to the target holder (4); A reaction gas injector (7) for injecting a reaction gas into the vacuum chamber (12); A pulsed laser 1 installed outside the vacuum chamber 12 to deliver a high energy laser beam to the target 3 to form a plume 5 which is a mixture of ions, atoms, molecules and electrons, and the laser beam An optical system 2 for passing through and focusing on the target 3 surface; A rotary plate capable of rotating movement installed at one side of the vacuum chamber 12; An x-y stage (9) capable of vertically and lateral movement attached to the rotating plate (10); It consists of a shutter 6 provided in the front part of the substrate 8 fixed on the x-y stage 9.

본 발명에 따르면, 기판 위에 형성된 제조된 박막은 균질하고 또한 대면적의 박막 제조가 가능하다.According to the present invention, the produced thin film formed on the substrate is capable of producing a homogeneous and large area thin film.

Description

펄스레이저를 이용한 대면적 박막의 제조 장치 및 방법Apparatus and method for manufacturing large area thin film using pulsed laser

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 대면적의 박막 중착을 위한 펄스레이져 중착 장치의 개략적인 구성도.1 is a schematic configuration diagram of a pulse laser deposition device for large-area thin film deposition of the present invention.

Claims (8)

진공조(12) 내의 일측부에 설치된 회전 가능한 타겟홀더(4)와; 상기 타겟홀더(4)에 부착된 타겟(3)과; 상기 진공조(12) 내로 반응 가스를 주입하기 위한 반응 가스 주입부(7)와; 고에너지의 레이저 빔을 상기 타겟(3)에 전달하여 이온과 원자, 분자 및 전자의 혼합체인 플룸(5)을 형성시키기 위해 진공조(12) 외부에 설치된 펄스 레이저(1)와; 상기 레이저 빔을 통과시켜 타겟(3) 표면 상에 포커싱하기 위한 광학계(2)와; 진공조(12)의 일측부에 설치된 회전 운동 가능한 회전판(10)과; 상기 회전판(10) 상에 부착된 상하, 좌우 운동이 가능한 x-y 스테이지(9)와; 상기 x-y 스테이지(9) 상에 고정된 기판(8)과; 상기 기판(8)의 전방부에 설치된 셔터(6)를 포함하고, 상기 형성된 플룸(5)은 상기 셔터의 특정 부문만의 개방에 의해 플룸(5)의 일부분만이 선택적으로 상기 셔터(6)를 통과하여 상기 기판(8)에 충돌하고, 상기 기판(8)에 충돌된 플룸(5)은 급속히 응고되어 균질한 박막을 형성하는 것을 특징으로 하는 대면적 박막 제조 장치.A rotatable target holder 4 provided at one side in the vacuum chamber 12; A target (3) attached to the target holder (4); A reaction gas injector (7) for injecting a reaction gas into the vacuum chamber (12); A pulse laser (1) provided outside the vacuum chamber (12) for delivering a high energy laser beam to the target (3) to form a plume (5), which is a mixture of ions, atoms, molecules, and electrons; An optical system (2) for passing the laser beam and focusing on a target (3) surface; A rotary plate capable of rotating movement installed at one side of the vacuum chamber 12; An x-y stage (9) capable of vertically and lateral movement attached to the rotating plate (10); A substrate (8) fixed on the x-y stage (9); A shutter 6 installed in the front of the substrate 8, wherein the formed plume 5 selectively opens only a portion of the plume 5 by opening only a specific section of the shutter. The large-area thin film manufacturing apparatus, characterized by passing through and impinging on the substrate (8), and the plum (5) collided with the substrate (8) is rapidly solidified to form a homogeneous thin film. 제1항에 있어서, 상기 기판은 상기 x-y 스테이지의 상하 및 좌우 직선운동과 상기 회전판의 회전 운동에 의해 상하, 좌우 및 회전 운동이 동시에 이루어지는 것을 특징으로 하는 대면적 박막 제조 장치.According to claim 1, wherein the substrate is a large-area thin film manufacturing apparatus characterized in that the vertical movement in the vertical, vertical and horizontal movement of the x-y stage and the rotary plate by the rotary motion of the rotating plate at the same time. 제1항에 있어서, 상기 타겟은 흑연 타겟이고, 상기 박막은 다이아몬드상 탄소 박막인 것을 특징으로 하는 대면적 박막 제조 장치.The apparatus of claim 1, wherein the target is a graphite target, and the thin film is a diamond-like carbon thin film. 제3항에 있어서, 상기 반응 가스는 수소이고, 상기 박막은 수소 함유 다이아몬드상 탄소 박막인 것을 특징으로 하는 대면적 박막 제조 장치.The apparatus for manufacturing a large-area thin film according to claim 3, wherein the reaction gas is hydrogen, and the thin film is a hydrogen-containing diamond-like carbon thin film. 제1항에 있어서, 상기 타겟은 탄소와 천이 금속의 합금 타게트이고, 상기 박막은 천이 금속 함유 다이아몬드상 탄소 박막인 것을 특징으로 하는 대면적 박막 제조 장치.The apparatus for manufacturing a large-area thin film according to claim 1, wherein the target is an alloy target of carbon and a transition metal, and the thin film is a transition metal-containing diamond-like carbon thin film. 제5항에 있어서, 상기 반응가스는 수소이고, 상기 박막은 수소 및 천이 그속 함유 다이아몬드상 탄소 박막인 것을 특징으로 하는 대면적 박막 제조 장치.6. The large-area thin film production apparatus according to claim 5, wherein the reaction gas is hydrogen, and the thin film is a diamond-like carbon thin film containing hydrogen and transition therein. 진공조(12) 내의 일측부에 회전 가능한 타겟홀더(4) 및 상기 타겟홀더 상에 고정된 타겟(3)을 설치하는 단계와; 상기 진공조(12) 내로 반응가스를 주입하기 위한 반응 가스 주입부(7)를 설치하는 단계와; 진공조(12)의 일측부에 회전 운동 가능한 회전판(10)을 설치하는 단계와; 상기 회전판(10) 상에 부착된 상하, 좌우 운동이 가능한 x-y 스테이지(9)를 설치하는 단계와; 상기 x-y 스테이지(9) 상에 기판(8)을 고정시키는 단계와; 상기 기판(8)의 전방부에 셔터(6)를 설치하는 단계와; 상기 진공조(12) 외부에 설치된 펄스 레이저(1)로부터 출력되는 고에너지 레이저 빔을 광학계(2)를 통과시켜 타겟(3) 표면 상에 포커싱하는 단계와; 상기 고에너지의 레이저 빔이 타겟(3)에 전달되여 이온과 원자, 분자 및 전자의 혼합체인 플룸(5)을 형성시키는 단계와; 상기 형성된 플룸(5)은 상기 셔터의 측정부분만의 개방에 의해 플룸(5)의 일부분만이 선택적으로 상기 셔터(6)를 통과하여 상기 기판(8)에 충돌하는 단계와; 상기 기판(8)에 충돌된 플룸(5)이 급속히 응고되어 균질한 박막을 형성하는 단계를 포함하는 것을 특징으로 하는 대면적 박막 제조 방법.Installing a rotatable target holder (4) on one side of the vacuum chamber (12) and a target (3) fixed on the target holder; Installing a reaction gas injector (7) for injecting the reaction gas into the vacuum chamber (12); Installing a rotating plate (10) rotatable in one side of the vacuum chamber (12); Installing an x-y stage (9) capable of vertically and lateral movement attached to the rotating plate (10); Securing a substrate (8) on the x-y stage (9); Installing a shutter (6) in front of the substrate (8); Focusing the high energy laser beam output from the pulse laser (1) provided outside the vacuum chamber (12) on the surface of the target (3) by passing through the optical system (2); The high energy laser beam is delivered to a target (3) to form a plume (5) which is a mixture of ions and atoms, molecules and electrons; The formed plumes (5) collide with the substrate (8) by selectively passing only a part of the plumes (5) by opening only the measuring portion of the shutter; A method of producing a large-area thin film, comprising the step of rapidly solidifying a plume (5) impinging on the substrate (8) to form a homogeneous thin film. 전계 방출형 표시 소자용 필드 에미터가 상기 제1항 내지 6항의 제조 장치에 의해 제조된 상기 균질 박막으로 구성되어 상기 전계 방출형 표시 소자용 필드 에미커의 면적이 대면적인 것을 특징으로 하는 대면적 전계 방출형 표시 소장용 필드 에미터.A field emitter for field emission display elements is constituted by the homogeneous thin film manufactured by the manufacturing apparatus of the above items 1 to 6, so that the area of the field emitter for field emission display elements is large. Field emitter field emitters. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940040616A 1994-12-31 1994-12-31 Apparatus and method of fabricating wide area thin film using pulse laser KR0153568B1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100393184B1 (en) * 1996-10-31 2004-01-24 삼성전기주식회사 Apparatus for fabricating a high-tc superconducting film using pulsed laser deposition and method thereof
KR100422244B1 (en) * 1997-08-13 2004-03-10 나노-프로프리어터리, 인크. A carbon film for field emission devices
KR100459880B1 (en) * 1998-05-07 2005-01-15 삼성전기주식회사 Target fixture for apparatus of manufacturing pulsed laser depositon
KR100777645B1 (en) * 2005-10-17 2007-11-19 성균관대학교산학협력단 Diamond Like Carbon Coating Device and the Method for manufacturing the same
KR101307592B1 (en) * 2008-08-25 2013-09-12 솔마이츠 비.브이. Method for depositing a material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100393184B1 (en) * 1996-10-31 2004-01-24 삼성전기주식회사 Apparatus for fabricating a high-tc superconducting film using pulsed laser deposition and method thereof
KR100422244B1 (en) * 1997-08-13 2004-03-10 나노-프로프리어터리, 인크. A carbon film for field emission devices
KR100459880B1 (en) * 1998-05-07 2005-01-15 삼성전기주식회사 Target fixture for apparatus of manufacturing pulsed laser depositon
KR100777645B1 (en) * 2005-10-17 2007-11-19 성균관대학교산학협력단 Diamond Like Carbon Coating Device and the Method for manufacturing the same
KR101307592B1 (en) * 2008-08-25 2013-09-12 솔마이츠 비.브이. Method for depositing a material

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