CN112921277A - Laser-induced pulse atomic beam generation system - Google Patents
Laser-induced pulse atomic beam generation system Download PDFInfo
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- CN112921277A CN112921277A CN201911231939.8A CN201911231939A CN112921277A CN 112921277 A CN112921277 A CN 112921277A CN 201911231939 A CN201911231939 A CN 201911231939A CN 112921277 A CN112921277 A CN 112921277A
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- 239000000463 material Substances 0.000 claims abstract description 30
- 238000006073 displacement reaction Methods 0.000 claims abstract description 21
- 150000002500 ions Chemical class 0.000 abstract description 26
- 238000004544 sputter deposition Methods 0.000 abstract description 15
- 230000005684 electric field Effects 0.000 abstract description 11
- 230000009471 action Effects 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000003993 interaction Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000026058 directional locomotion Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention aims to provide a laser-induced pulse atomic beam generating system which can generate a plurality of atomic beams, and has the characteristics of high purity, high beam intensity, adjustable divergence, adjustable pulse frequency and the like. The device comprises a focusing lens, a mirror target, a laser target, a direct-current high-voltage power supply, an angular mirror frame, a Z-direction linear displacement table, a laser target support frame, an air extraction interface and a vacuum chamber. The invention has the beneficial effects that: the laser is used for bombarding the surface plasma of the material, positive ions in the plasma are accelerated to move towards a concave mirror formed by the same material under the action of an accelerating electric field, and the positive ions bombard the surface of the material and generate self-sputtering, so that an atomic beam is generated. The frequency of the pulsed atomic beam is the same as the frequency of the laser pulses. The atomic beam generating system can generate various pulse atomic beams, and the atomic beams have the characteristics of high purity, adjustable atomic beam intensity and divergence, adjustable pulse frequency and the like.
Description
Technical Field
The invention belongs to the technical field of atomic beam generation, and particularly relates to a laser-induced pulse atomic beam generation system.
Background
In the atomic beam, the atoms make directional motion with good collimation, and the interaction between the atoms can be ignored, so that the beam can be regarded as a moving collection of isolated atoms, and the beam can be used for researching the properties of the atoms and the interaction between the atoms and other particles. The interaction between the atomic beam and the surface of the material can form a film with special function on the surface of the material, or change the crystal structure of atoms or molecules on the surface of the material, thereby changing the physical and chemical properties of the surface of the material. Bombardment of materials with atomic beams can also investigate the physical and chemical sputtering process of materials. In the controlled nuclear fusion research, injecting a trace amount of impurity atoms into plasma can induce various plasma phenomena, and various plasma behavior researches can be carried out according to the phenomena. Therefore, the atomic beam has wide application in research and production fields such as atom and molecule properties, interaction of atoms and other substances or particles, material surface modification and coating, controlled nuclear fusion and the like.
To generate the atomic beam, a laboratory typically heats a localized atomic material using a vacuum tank, or heats the atomic material in a modified high temperature vacuum furnace. Since these apparatuses for generating atomic beams are not specially designed, one apparatus can only generate one atomic beam, which is difficult to generate atomic beams for materials with high melting points and difficult to vaporize, and there are disadvantages that the atomic beam contains substances with low atomic purity, and the operation is unstable.
Disclosure of Invention
The invention aims to provide a laser-induced pulse atomic beam generating system which can generate a plurality of atomic beams, and has the characteristics of high purity, high beam intensity, adjustable divergence, adjustable pulse frequency and the like.
The technical scheme of the invention is as follows: a laser-induced pulse atomic beam generating system comprises a focusing lens, a mirror target, a laser target, a direct-current high-voltage power supply, an angular mirror frame, a Z-direction linear displacement table, a laser target supporting frame, an air exhaust interface and a vacuum chamber.
The vacuum chamber comprises a vacuum chamber bottom plate, a vacuum chamber side wall and a cavity cover plate, the periphery of the vacuum chamber bottom plate is connected with the vacuum chamber side wall, and the top end of the vacuum chamber side wall is covered with the cavity cover plate.
The cavity cover plate is provided with an observation window, and the cavity cover plate is provided with a cover plate handle.
Two opposite side surfaces of the side wall of the vacuum chamber are respectively provided with a laser window, and the other side surface is provided with a device interface flange.
The vacuum chamber bottom plate is provided with an air exhaust interface.
The vacuum chamber bottom plate on be equipped with XY to linear displacement platform, be equipped with Z to linear displacement platform on the XY to linear displacement platform, Z installs the angular mirror holder on the linear displacement platform, installs the mirror surface target on the angular mirror holder, is equipped with the laser target support frame on the vacuum chamber bottom plate, the laser target support frame is equipped with the laser target, mirror surface target and laser target connect direct current high voltage power supply's negative pole and positive pole respectively.
The vacuum chamber is also provided with a focusing lens, and the focusing lens, the mirror surface target and the laser target are positioned on the same straight line.
The mirror target and the laser target are made of the same material.
The surface of the mirror target is concave.
The invention has the beneficial effects that: the laser is used for bombarding the surface plasma of the material, positive ions in the plasma are accelerated to move towards a concave mirror formed by the same material under the action of an accelerating electric field, and the positive ions bombard the surface of the material and generate self-sputtering, so that an atomic beam is generated. The frequency of the pulsed atomic beam is the same as the frequency of the laser pulses. The atomic beam generating system can generate various pulse atomic beams, and the atomic beams have the characteristics of high purity, adjustable atomic beam intensity and divergence, adjustable pulse frequency and the like.
Drawings
FIG. 1 is a schematic diagram of a laser-induced pulsed atomic beam generation system according to the present invention;
fig. 2 is a structural diagram of a laser-induced pulsed atomic beam generation system according to the present invention.
In the figure, 1 focusing lens, 2 mirror target, 3 laser target, 4 DC high voltage power supply, 5 laser beam, 6 positive ion beam, 7 atomic beam, 8 angular mirror frame, 9Z direction linear displacement table, 10 laser window, 11 observation window, 12 cavity cover plate, 13 cover plate handle, 14 device interface flange, 15 laser target support frame, 16 air extraction interface, 17XY direction linear displacement table, 18 vacuum chamber side wall, 19 vacuum chamber bottom plate.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
The invention provides a laser-induced pulse atomic beam generating system, which uses laser to bombard the surface of a material to generate plasma, ions in the plasma are accelerated to move towards a concave mirror formed by the same material under the action of an accelerating electric field, and the ions bombard the surface of the material to generate self-sputtering, thereby generating an atomic beam.
As shown in fig. 1, a laser-induced pulse atomic beam generating system includes a focusing lens 1, a mirror target 2, a laser target 3, a dc high voltage power supply 4, an angle mirror holder 8, a Z-direction linear displacement stage 9, a laser window 10, an observation window 11, a cavity cover plate 12, a cover plate handle 13, a device interface flange 14, a laser target support frame 15, an air extraction interface 16, an XY-direction linear displacement stage 17, a vacuum chamber side wall 18, and a vacuum chamber bottom plate 19.
The vacuum chamber comprises a vacuum chamber bottom plate 19, a vacuum chamber side wall 18 and a chamber cover plate 12, wherein the chamber cover plate 12 is provided with an observation window 11, the chamber cover plate 12 is provided with a cover plate handle 13, one of two opposite side surfaces of the vacuum chamber side wall 18 is provided with a laser window 10, the other one is provided with a device interface flange 14, and the vacuum chamber bottom plate 19 is provided with an air suction interface 16.
The XY-direction linear displacement platform 17 is installed on a vacuum chamber bottom plate 19, the XY-direction linear displacement platform 17 is provided with a Z-direction linear displacement platform 9, the Z-direction linear displacement platform 9 is provided with an angular mirror frame 8, the angular mirror frame 8 is provided with a mirror surface target 2, the vacuum chamber bottom plate 19 is further provided with a laser target support frame 15, the laser target 3 is arranged on the laser target support frame 15, the mirror surface target 2 and the laser target 3 are respectively connected with a negative pole and a positive pole of a direct-current high-voltage power supply 4, the vacuum chamber is further provided with a focusing lens 1, and the focusing lens 1, the mirror surface target 2 and the laser target 3 are located on the same straight line.
The core components of the invention are a laser target 3, a mirror target 2 and a direct-current high-voltage power supply 4, wherein the mirror target 2 and the laser target 3 are made of the same material.
The vacuum chamber is mainly used for installing the mirror target 2 and the laser target 3, providing and maintaining a high vacuum environment, providing a flange for connecting the main device vacuum chamber and the air pumping unit, and providing a channel for incident light and an atomic beam 7. The angular frame 8 is used for horizontal rotation and pitch adjustment of the mirror target. The XY-direction linear displacement stage 17 and the Z-direction linear displacement stage 9 are used to adjust the position of the mirror target.
The focusing lens 1 is installed outside the vacuum chamber to converge the laser beam, and the position of the lens is adjusted so that the focal point of the laser beam falls on the end face of the laser target 3. The surface of the mirror target 2 is concave, the material type is the same as that of the laser target 3, and the mirror target has two functions: 1. interacting with incident ions to generate a self-sputtering process, thereby generating an atomic beam; 2. the effect of converging the atomic beam, the divergence of the atomic beam depends on the relative distance from the specular target 2 and the laser target 3.
The adjustment of the laser induced pulsed atomic beam generation system is described below in conjunction with fig. 2. 1. The position of the laser target 3 is determined according to the required divergence of the atomic beam and the focal length of the specular target 2. 2. The position of the condensing lens 1 and the orientation of the mirror target 2 are adjusted so that the focal point of the incident laser beam is located at the end face of the laser target 3. 3. And adjusting the pulse energy of the laser and the voltage of the direct-current high-voltage power supply according to the required beam intensity. 4. The frequency of the pulsed laser beam is adjusted according to the desired frequency of the pulsed atom beam.
A high-energy pulse laser beam 5 is converged by a converging lens 1 and then irradiates a laser target 3, the laser target 3 absorbs laser energy and generates plasma on the surface of the laser target, and positive ions 6 in the plasma are accelerated in an electric field and then bombard a mirror target 2 at a high speed. The incident positive ions 6 interact with the surface of the specular target 2 to create a self-sputtering process that produces a large number of neutral atoms that are ejected in a direction nearly parallel to the optical axis of the specular target to form an atomic beam.
When a high-energy pulse laser beam is emitted, the process is repeated to generate a pulse atom beam, and the pulse frequency of the atom beam is equal to that of the high-energy laser beam. The pulse frequency of the atomic beam can be adjusted by adjusting the pulse frequency of the laser. In addition, because the high-energy laser pulse has extremely high energy flux density and can ablate all opaque solid materials, the system of the invention can generate atomic beams by all opaque solid materials and has the obvious characteristic of generating many types of atomic beams.
Self-sputtering produces atoms, positive ions, and electrons. The positive ions are not ejected from the system of the present invention because the electric field forces applied to the positive ions cause the positive ions to return to the specular target and collide with the specular target again to cause self-sputtering. Electrons generated by self-sputtering return to the negative electrode of the power supply, namely the laser target 3, under the action of electric field force, and cannot be emitted from the system. The atoms are uncharged, cannot be acted by an electric field, and can be ejected from the system. The system produces an atomic beam that is free of positive ions and free electrons, and is composed entirely of neutral atoms.
The density of the plasma created by the interaction of the laser with the material is related to the energy of the incident laser. Theory and experiment show that the larger the pulse energy of the laser, the larger the plasma density. Therefore, the quantity of positive ions can be changed by changing the energy of the incident laser pulse, so that the beam current intensity of the atomic beam is changed.
The self-sputtering yield of a material is related to the type of material and the energy of the incident ions. When the material is the same and the energy of the incident ions is not too high, the self-sputtering yield increases with the increase of the energy of the incident ions. The beam intensity of the atomic beam is equal to the self-sputtering yield of the material multiplied by the beam intensity of the incident ions, which is the atomic beam magnification of the system. Therefore, the self-sputtering yield of the material and the beam current intensity of the atomic beam can be changed by changing the energy of the incident positive ions by changing the accelerating voltage.
The distribution rule of the number of sputtered atoms according to the direction is as follows: in the vicinity of the direction of the reflection line determined by the law of geometrical optics reflection, the angle between the velocity direction of the sputtered atoms and the reflection line is set to be theta, and the number of atoms emitted in the direction is proportional to cos theta. The exit direction of most sputtered atoms follows the law of reflection in geometric optics. The specular target 2 having a concave structure thus has a converging effect on the atomic beam like a concave mirror in geometric optics. Depending on the relative distance of the specular target 2 and the laser target 3, a diverging, parallel or converging atom beam can be obtained. That is, adjusting the relative distance of the mirror target 2 and the laser target 3 can change the divergence of the atomic beam.
The technical scheme is the theoretical basis of the invention. The process of the present invention for generating an atom beam is described below in combination based on the above discussion.
As shown in fig. 1, when the high-energy pulse laser beam 5 is converged by the focusing lens 1 in the optical axis direction and passes through the light-passing hole of the mirror target 2, its focal point is just on the end face of the laser target 3. The positive pole and the negative pole of the high-voltage direct current power supply 4 are respectively connected to the laser target 3 and the mirror surface target 2, and an electric field is generated between the laser target 3 and the mirror surface target 2. Laser bombards laser target 3 to generate plasma, and positive ions 6 in the plasma are accelerated under the action of an electric field and move towards mirror target 2. These positive ions 6 have a high energy when they reach the surface of the mirror target 2, and the magnitude of the energy is related to the power supply voltage and the number of charges carried by the ions. These positive ions 6 bombard the surface of the specular target 2, which occurs to generate a large number of atoms 7 from the sputtering process. These atoms 7 are not affected by the electric field and are emitted in a direction substantially conforming to the law of reflection, thereby generating an atomic beam. After the next high-energy laser pulse is incident, the above process is repeated to generate a pulse atom beam with the same frequency as the laser pulse. The above is the process of generating an atom beam by a laser-induced pulsed atom beam generating system.
The operation of the laser-induced pulsed atomic beam generation system is described below with reference to fig. 1.
The core of the laser-induced pulse atomic beam generation system comprises a focusing lens 1, a mirror target 2, a laser target 3 and a direct-current high-voltage power supply 4. The mirror target 2 has a light-transmitting hole in the center, which is a passage for incident light. The optical axes of the focusing lens 1 and the mirror target 2 are on the same straight line with the laser target 3. The relative distance of the specular target from the laser target 3 depends on the desired divergence of the atomic beam.
As shown in fig. 1: the laser beam is converged into a convergent beam 5 by the focusing lens 1, and the convergent beam 5 passes through the light through hole of the mirror target 2, and the focus of the convergent beam is located at the end face of the laser target 3. The laser interacts with the laser target 3 to produce a plasma. The positive ions 6 in the plasma are accelerated in an electric field formed by a direct-current high-voltage power supply 4, bombard the mirror surface target 2 at high speed, and generate an atomic beam through the self-sputtering process of ions and materials.
Claims (9)
1. A laser-induced pulsed atomic beam generating system, characterized by: the device comprises a focusing lens (1), a mirror target (2), a laser target (3), a direct-current high-voltage power supply (4), an angular mirror bracket (8), a Z-direction linear displacement table (9), a laser target support frame (15), an air exhaust interface (16) and a vacuum chamber.
2. A laser induced pulsed atomic beam generating system as claimed in claim 1, wherein: the vacuum chamber comprises a vacuum chamber bottom plate (19), a vacuum chamber side wall (18) and a cavity cover plate (12), the periphery of the vacuum chamber bottom plate (19) is connected with the vacuum chamber side wall (18), and the top end of the vacuum chamber side wall (18) is covered with the cavity cover plate (12).
3. A laser induced pulsed atomic beam generating system as claimed in claim 2, wherein: the cavity cover plate (12) is provided with an observation window (11), and the cavity cover plate (12) is provided with a cover plate handle (13).
4. A laser induced pulsed atomic beam generating system as claimed in claim 2, wherein: two opposite sides of the vacuum chamber side wall (18) are provided with a laser window (10) and the other side is provided with a device interface flange (14).
5. A laser induced pulsed atomic beam generating system as claimed in claim 2, wherein: the vacuum chamber bottom plate (19) is provided with an air exhaust interface (16).
6. A laser induced pulsed atomic beam generating system as claimed in claim 2, wherein: vacuum chamber bottom plate (19) on be equipped with XY to linear displacement platform (17), XY is equipped with Z to linear displacement platform (9) to linear displacement platform (17), Z is to installing angular mirror holder (8) on linear displacement platform (9), install mirror surface target (2) on angular mirror holder (8), be equipped with laser target support frame (15) on vacuum chamber bottom plate (19), laser target support frame (15) are equipped with laser target (3), the negative pole and the positive pole of direct current high voltage power supply (4) are connected respectively to mirror surface target (2) and laser target (3).
7. A laser induced pulsed atomic beam generating system as claimed in claim 2, wherein: the vacuum chamber is also provided with a focusing lens (1), and the focusing lens (1), the mirror surface target (2) and the laser target (3) are positioned on the same straight line.
8. A laser induced pulsed atomic beam generating system as claimed in any one of claims 1 to 7, wherein: the mirror target (2) and the laser target (3) are made of the same material.
9. A laser induced pulsed atomic beam generating system as claimed in claim 8, wherein: the surface of the mirror target (2) is concave.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911231939.8A CN112921277A (en) | 2019-12-05 | 2019-12-05 | Laser-induced pulse atomic beam generation system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911231939.8A CN112921277A (en) | 2019-12-05 | 2019-12-05 | Laser-induced pulse atomic beam generation system |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4091256A (en) * | 1975-01-16 | 1978-05-23 | The United States Of America As Represented By The Secretary Of The Air Force | Pulsed atomic beam apparatus |
| US4199685A (en) * | 1976-04-15 | 1980-04-22 | Heinrich Hora | Laser beam activated ion source |
| GB2080027A (en) * | 1980-07-10 | 1982-01-27 | Hughes Technology Ltd | Laser Particle Generator |
| JPH06265696A (en) * | 1993-03-10 | 1994-09-22 | Ebara Corp | High-speed atomic beam source |
| JPH07316790A (en) * | 1994-05-20 | 1995-12-05 | Sumitomo Metal Mining Co Ltd | Production of high-purity thin film |
| CN1689960A (en) * | 2004-04-26 | 2005-11-02 | 中国科学院光电技术研究所 | Method for making nanometer structure by optical operated atom and apparatus thereof |
| CN211734459U (en) * | 2019-12-05 | 2020-10-23 | 核工业西南物理研究院 | Laser-induced pulse atomic beam generation system |
-
2019
- 2019-12-05 CN CN201911231939.8A patent/CN112921277A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4091256A (en) * | 1975-01-16 | 1978-05-23 | The United States Of America As Represented By The Secretary Of The Air Force | Pulsed atomic beam apparatus |
| US4199685A (en) * | 1976-04-15 | 1980-04-22 | Heinrich Hora | Laser beam activated ion source |
| GB2080027A (en) * | 1980-07-10 | 1982-01-27 | Hughes Technology Ltd | Laser Particle Generator |
| JPH06265696A (en) * | 1993-03-10 | 1994-09-22 | Ebara Corp | High-speed atomic beam source |
| JPH07316790A (en) * | 1994-05-20 | 1995-12-05 | Sumitomo Metal Mining Co Ltd | Production of high-purity thin film |
| CN1689960A (en) * | 2004-04-26 | 2005-11-02 | 中国科学院光电技术研究所 | Method for making nanometer structure by optical operated atom and apparatus thereof |
| CN211734459U (en) * | 2019-12-05 | 2020-10-23 | 核工业西南物理研究院 | Laser-induced pulse atomic beam generation system |
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