CN117286452B - Film preparation device and preparation method based on ion beam sputtering deposition and shaping - Google Patents
Film preparation device and preparation method based on ion beam sputtering deposition and shaping Download PDFInfo
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- CN117286452B CN117286452B CN202311195590.3A CN202311195590A CN117286452B CN 117286452 B CN117286452 B CN 117286452B CN 202311195590 A CN202311195590 A CN 202311195590A CN 117286452 B CN117286452 B CN 117286452B
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- 238000007493 shaping process Methods 0.000 title claims abstract description 61
- 238000001659 ion-beam spectroscopy Methods 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 238000000151 deposition Methods 0.000 title claims abstract description 22
- 230000008021 deposition Effects 0.000 title claims abstract description 22
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 218
- 239000010408 film Substances 0.000 claims abstract description 52
- 238000004544 sputter deposition Methods 0.000 claims abstract description 35
- 239000013077 target material Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000011068 loading method Methods 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 230000001133 acceleration Effects 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 20
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- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a film preparation device and a preparation method based on ion beam sputtering deposition and shaping, wherein the preparation device comprises the following steps: a vacuum chamber; the first workbench is used for loading workpieces and is arranged at the upper part of the vacuum chamber, and the lower surface of the first workbench is parallel to the horizontal plane; the second workbench is used for loading the target and is positioned below the first workbench; the pulse ion source is positioned at one side of the horizontal direction of the second workbench and is used for emitting an ion beam to the surface of the target material for sputter deposition or shaping a film deposited on the surface of the workpiece; the driving device is arranged in the vacuum chamber and used for changing the direction of the ion beam emitted by the pulse ion source so as to switch the ion beam on the surface of the target material and the surface of the workpiece. The preparation device disclosed by the invention can realize the thin film sputtering deposition and shaping operation on the surface of the workpiece by only one pulse ion source, has the advantages of simple structure, easiness in manufacturing and low cost, and is suitable for large-scale production and popularization.
Description
Technical Field
The invention relates to the technical field of film deposition, in particular to a film preparation device and a film preparation method based on ion beam sputtering deposition and shaping.
Background
Ion beam sputter deposition has been developed as an important method in thin film processes, and the sputtering principle is as follows: the ion beam bombardment is carried out on the surface of the target material by utilizing the low-energy focused ion beam at a certain angle, and sputtered target material atoms are transmitted at a certain angle and deposited on the surface of the workpiece.
Ion beam shaping is one of the semiconductor etching processes, mainly physical etching, and according to the sputtering principle, the low-energy ion beam is utilized to bombard the surface of a workpiece, and momentum and energy are transferred through the collision of ions and atoms on the surface of the workpiece, so that atoms on the surface of an element are separated, and the shaping purpose is achieved.
Although a relatively flat film can be deposited on the surface of a workpiece through an ion beam sputtering deposition process, as the transmission path of the ion beam sputtering deposition process cannot be strictly controlled in the target atomic sputtering process, protrusions are formed on local areas of the surface of the film, and the surface of the film is uneven, therefore, in general, after the film is deposited on the surface of the workpiece through the ion beam sputtering deposition process, the protruding parts of the surface of the film need to be shaped through ion beam shaping, so that local surface shape errors of the surface of the film are accurately corrected, and the surface shape accuracy is improved.
Because the ion beam has multiple functions of ion beam sputtering deposition, ion beam auxiliary sputtering, ion beam shaping and the like, internationally, a plurality of vacuum equipment manufacturers develop and produce ion beam sputtering deposition and shaping equipment, but most of the developed and produced equipment has single function, such as being incapable of sputtering and shaping at the same time. Although some manufacturers integrate sputtering and shaping into one device, two vacuum cavities are arranged on the device, sputtering ion sources and shaping ion sources are respectively arranged in the two vacuum cavities, when a workpiece is sputtered in the sputtering vacuum cavity, the workpiece is required to be taken out of the vacuum cavity and placed in the shaping vacuum cavity, the operation is complex, the processing efficiency is low, in addition, in the process of transferring the sputtered workpiece from the sputtering vacuum cavity to the shaping vacuum cavity, the sputtered workpiece is influenced by the environment, and modification conditions such as oxidization, pollution and the like can be caused on a film on the surface of the workpiece.
For example, CN101880863a discloses a multifunctional ion beam sputter deposition and etching apparatus, which is provided with a vacuum chamber, and two sputter ion sources and a shaping ion source are disposed in the vacuum chamber, and although sputtering and shaping can be performed in a vacuum chamber environment, more ion sources occupy a larger vacuum chamber volume space, so that the whole volume of the apparatus is huge, and meanwhile, the production cost of the apparatus is high.
Disclosure of Invention
In view of the above, the invention provides a thin film preparation device and a thin film preparation method based on ion beam sputtering deposition and shaping, which are used for solving the problems that in the prior art, a plurality of ion sources are arranged in a vacuum cavity to realize sputtering and shaping processes, so that more parts of equipment are caused, the whole structure is complex, and the large-scale production and popularization are not facilitated.
The technical scheme of the invention is realized as follows:
in one aspect, the present invention provides a thin film preparation apparatus based on ion beam sputter deposition and shaping, the preparation apparatus comprising:
a vacuum chamber;
the first workbench is used for loading workpieces and is arranged at the upper part of the vacuum chamber, and the lower surface of the first workbench is parallel to the horizontal plane;
the second workbench is used for loading the target, is arranged in the vacuum chamber and is positioned below the first workbench;
the pulse ion source is arranged in the vacuum chamber and positioned at one side of the second workbench in the horizontal direction and is used for emitting ion beams to the surface of the target material for sputter deposition or for emitting the ion beams to shape a film deposited on the surface of the workpiece;
the driving device is arranged in the vacuum chamber and used for changing the direction of the ion beam emitted by the pulse ion source so as to switch the ion beam on the surface of the target material and the surface of the workpiece.
On the basis of the above technical solution, preferably, the pulsed ion source includes an ion beam generating device and an ion beam control device connected with the ion beam generating device.
Further, preferably, the ion beam generating device comprises a protective cover, and a gas isolator, a discharge reaction chamber, a screen grid, an acceleration grid and a deceleration grid which are arranged in the protective cover;
the protective cover is provided with a gas inlet, one end of the gas isolator is communicated with the gas inlet, the other end of the gas isolator is connected with the discharge reaction chamber, and the outer wall of the discharge reaction chamber is surrounded by a radio frequency induction coil;
the screen grid, the acceleration grid and the deceleration grid are sequentially arranged at one end, far away from the gas isolator, of the discharge reaction chamber, the extraction voltage of the screen grid is positive voltage, the extraction voltage of the acceleration grid is negative voltage, and the extraction voltage of the deceleration grid is zero voltage or positive voltage;
an ion beam outlet is arranged on one side of the protective cover, which is close to the deceleration grid, and the ion beam outlet is connected with an ion beam control device.
Still further, preferably, the ion beam control device includes a housing, an electromechanical shutter, an ion beam controller, a variable attenuator, and a magnetic lens, wherein one end of the housing is connected with an ion beam exit port, the electromechanical shutter, the ion beam controller, the variable attenuator, and the magnetic lens are sequentially disposed inside the housing along an ion beam transmission direction, the electromechanical shutter is used for controlling on/off of the ion beam, the ion beam controller is used for controlling energy of the ion beam, the variable attenuator is used for controlling flow of the ion beam, and the magnetic lens is used for adjusting focusing of the ion beam.
On the basis of the technical scheme, preferably, the ion beam control device further comprises a beam splitter and an ion spectrometer, wherein the beam splitter and the ion spectrometer are arranged in the shell, the beam splitter is arranged between the variable attenuator and the magnetic lens, and the ion spectrometer is used for receiving an ion beam reflected by the surface of the beam splitter and detecting parameters of the ion beam.
On the basis of the technical scheme, preferably, the surface of the second workbench for loading the target material forms an angle of 45 degrees with the lower surface of the first workbench, and the driving device is used for driving the pulse ion source to overturn so that the direction of the ion beam emitted by the pulse ion source is parallel or perpendicular to the lower surface of the first workbench.
Further, preferably, the preparation device further includes a first moving mechanism and a second moving mechanism disposed in the vacuum chamber, the first moving mechanism is used for driving the first workbench to translate in a horizontal direction, and the second moving mechanism is used for driving the second workbench to translate in a horizontal direction and a vertical direction.
Preferably, the preparation device further comprises an auxiliary ion source arranged in the vacuum chamber, wherein the auxiliary ion source is used for carrying out auxiliary deposition on the surface of the workpiece.
On the other hand, the invention also discloses a film preparation method based on ion beam sputtering deposition and shaping, which utilizes the preparation device and comprises the following operation steps:
s1, placing a workpiece and a target in a vacuum chamber, mounting the workpiece on the lower surface of a first workbench, mounting the target on the surface of a second workbench, and vacuumizing the vacuum chamber;
s2, driving the direction of the ion beam emitted by the pulse ion source to be parallel to the lower surface of the first workbench through the driving device, starting the pulse ion source, and enabling the ion beam emitted by the pulse ion source to bombard the target material so as to sputter and deposit the ion beam on the surface of the workpiece to form a film;
s3, after ion beam sputtering deposition is completed, driving the direction of the ion beam emitted by the pulse ion source to be vertical to the lower surface of the first workbench through the driving device, starting the pulse ion source, and shaping the film on the surface of the workpiece by the ion beam emitted by the pulse ion source.
Compared with the prior art, the invention has the following beneficial effects:
(1) The preparation device disclosed by the invention can be used for installing a workpiece and a target respectively by arranging the first workbench and the second workbench in the vacuum chamber, and simultaneously, by arranging a pulse ion source in the vacuum chamber, when a film is required to be deposited on the surface of the workpiece, the ion beam emitted by the pulse ion source can bombard the target to realize the sputtering deposition on the surface of the workpiece, and when the film on the surface of the workpiece is required to be shaped, the direction of the ion beam emitted by the pulse ion source can be changed under the action of the driving device, so that the ion beam can be directly irradiated on the surface of the workpiece, thereby realizing the shaping of the film deposited on the surface of the workpiece.
(2) Through arranging the screen grating, the ions in the discharge reaction chamber can be screened and separated, positive ions can pass through the screen grating, and through arranging the accelerating grating and the decelerating grating on one side of the screen grating far away from the discharge reaction chamber in sequence, the positive ions can be accelerated and controlled through the electrode on the accelerating grating, so that the positive ion beam can obtain specific energy and speed, the decelerating grating can decelerate the accelerated ion beam, the energy of the ion beam is reduced, and the energy of the ion beam can be controlled through the cooperation of the accelerating grating and the decelerating grating, so that the energy requirements of different ion beams for sputtering and shaping are met;
(3) The ion beam controller can adjust the voltages of the screen grid, the acceleration grid and the deceleration grid to achieve the required beam shape and energy distribution, and the variable attenuator is used for adjusting the flow of the ion beam to control the sputtering depth and the surface morphology; the electromechanical shutter can ensure that the ion beam irradiates only the surface area to be treated, the ion beam can be focused in the required area through the arrangement of the magnetic lens, and the position and the shape of sputtering and shaping can be controlled by adjusting the focusing of the ion beam, so that the ion beam sputtering and shaping can be accurately realized;
(4) The ion beam can be divided into a plurality of beam flows through the arrangement of the beam splitter so as to process a plurality of areas, and the sputtering deposition efficiency of the film is improved; the ion energy spectrometer is arranged, so that the mass, the quantity and the energy of various ions in the ion beam can be measured, the energy distribution of the ion beam can be accurately and finely monitored and adjusted, the quality and the effect of ion beam processing can be ensured, and the processing precision and the processing stability are improved.
(5) By arranging an ion beam control device and an ion beam generation device to be matched, parameters such as energy, strength and the like of the ion beam can be accurately controlled, fine regulation and control of the film preparation process can be realized, and the quality and consistency of the film are improved, so that the accuracy and consistency of the process are improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic plan view of a manufacturing apparatus according to the present invention for ion beam sputtering;
FIG. 2 is a schematic plan view of a manufacturing apparatus of the present invention for ion beam shaping;
FIG. 3 is a schematic plan view of a pulsed ion source of the present disclosure;
reference numerals:
1. a vacuum chamber; 2. a first work table; s, a workpiece; 3. a second work table; p, target material; 4. a pulsed ion source; 5. a driving device; 41. ion beam generating means; 42. an ion beam control device; 411. a protective cover; 412. a gas isolator; 413. a discharge reaction chamber; 414. a screen grid; 415. an acceleration grid; 416. a deceleration grid; 4111. a gas inlet; 4112. an ion beam exit; 417. a radio frequency induction coil; 421. a housing; 422. an electromechanical shutter; 423. an ion beam controller; 424. a variable attenuator; 425. a magnetic lens; 426. a beam splitter; 427. an ion energy spectrometer; 6. a first moving mechanism; 7. a second moving mechanism; 8. an auxiliary ion source.
Detailed Description
The following description of the embodiments of the present invention will clearly and fully describe the technical aspects of the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
Referring to fig. 1, in conjunction with fig. 2, an embodiment of the present invention discloses a thin film preparation apparatus based on ion beam sputter deposition and shaping, which includes a vacuum chamber 1, a first working table 2, a second working table 3, a pulsed ion source 4, and a driving device 5.
The vacuum chamber 1 is used for providing an environment for preparing a film on the surface of the workpiece S, the vacuum chamber 1 can be a cavity, and the cavity can be opened or closed, so that the workpiece S and the target P are installed in the vacuum chamber 1. Meanwhile, the vacuum chamber 1 can be internally vacuumized according to the operation requirement.
A first table 2 for loading a workpiece S, which is disposed at an upper portion of the vacuum chamber 1, and a lower surface of the first table 2 is parallel to a horizontal plane, and the workpiece S according to the present embodiment is preferably an epitaxial substrate, and a thin film is prepared on the substrate. The substrate is horizontally arranged on the lower surface of the first workbench 2, so that the surface of the substrate, on which the film needs to be prepared, is parallel to the horizontal surface, and the surface of the substrate, on which the film needs to be prepared, is smooth.
A second stage 3 for loading a target P disposed in the vacuum chamber 1 below the first stage 2, the target P being for ion bombardment of its surface to cause atoms or molecules to be stripped from the target P surface to form an ion stream, which flows upward and is deposited on the substrate surface to form a desired thin film.
The pulsed ion source 4 is disposed in the vacuum chamber 1 and located at one side of the second working table 3 in the horizontal direction, and is used for emitting an ion beam to the surface of the target P for sputter deposition or for shaping a film deposited on the surface of the workpiece S.
A driving device 5, disposed in the vacuum chamber 1, for changing the direction of the ion beam emitted by the pulsed ion source 4, so as to switch the ion beam between the surface of the target P and the surface of the workpiece S.
According to the preparation device disclosed by the invention, when a film is required to be deposited on the surface of the workpiece S, the ion beam emitted by the pulse ion source 4 can bombard the target P, so that the sputtering deposition of the surface of the workpiece S is realized, and when the film on the surface of the workpiece S is required to be shaped, the direction of the ion beam emitted by the pulse ion source 4 can be changed under the action of the driving device 5, so that the ion beam directly irradiates the surface of the workpiece S, and the shaping of the film deposited on the surface of the workpiece S is realized.
In order to realize the sputter deposition of the ion beam and the shaping of the ion beam by the same pulsed ion source 4, the pulsed ion source 4 is structurally configured in this embodiment, and specifically, the pulsed ion source 4 includes an ion beam generating device 41 and an ion beam control device 42 connected to the ion beam generating device 41. The ion beam generating device 41 is used for emitting an ion beam with certain energy, the ion beam control device 42 is used for adjusting the energy, the flow and the beam shape of the ion beam so as to meet the performance requirements of different ion beams in the ion beam sputtering and ion beam shaping processes, so that one pulse ion source 4 can integrate the dual functions of ion beam sputtering and ion beam shaping, and more sputtering ion sources and shaping ion sources are not required to be arranged in the vacuum chamber 1, thereby reducing the use amount of parts and realizing the advantages of light volume and simple structure of the whole preparation device.
Specifically, referring to fig. 3, the ion beam generating apparatus 41 disclosed in this embodiment includes a protective cover 411, and a gas separator 412, a discharge reaction chamber 413, a screen 414, an acceleration screen 415, and a deceleration screen 416 provided in the protective cover 411.
The protective cover 411 is used to provide mechanical support, and in some cases, a cooling device may be provided on the protective cover 411 to provide cooling requirements for the internal ion reaction. The protecting cover 411 is provided with a gas inlet 4111 for introducing a reaction gas, such as argon or nitrogen, and one end of the gas isolator 412 is communicated with the gas inlet 4111, the other end is connected with the discharge reaction chamber 413, and the outer wall of the discharge reaction chamber 413 is surrounded by a radio frequency induction coil 417. The gas-isolated chamber serves to filter some impurities in the gas, allowing only the reaction gas to flow into the discharge reaction chamber 413, while the gas-isolated chamber can also maintain electrical isolation between the discharge reaction chamber 413 and the protective cover 411. The discharge reaction chamber 413 is made of a dielectric such as quartz or alumina, allowing the magnetic field generated by the rf induction coil 417 to penetrate the discharge chamber and ionize Ar. The plasma density or number of ions per unit volume within the discharge reaction chamber 413 is proportional to the applied rf power.
The screen grid 414, the acceleration grid 415 and the deceleration grid 416 are sequentially arranged at one end of the discharge reaction chamber 413 far away from the gas isolator 412, the extraction voltage of the screen grid 414 is positive, the extraction voltage of the acceleration grid 415 is negative, and the extraction voltage of the deceleration grid 416 is zero or positive. The protective cover 411 is provided with an ion beam exit port 4112 on a side close to the deceleration grating 416, and the ion beam exit port 4112 is connected to the ion beam control device 42.
The pulse power supply modulates the electric signal generated by the high-voltage direct current power supply into a pulse signal through a modulator, and then the pulse signal passes through an electrode on the screen 414 to screen and separate the incident ions. The screen 414 is used to remove negative ions, neutral total deposition, and ions such as ions reflected by the ion source from the ion beam, so that only positive ions pass through the screen 414, and the screen 414 can reduce the ion current from the non-emission direction in the ion beam emission source as much as possible, thereby improving the longitudinal coherence of the beam current, reducing the kinetic energy dispersion, and improving the beam current emission efficiency.
After passing through the screen 414, the positive ions enter the acceleration grid 415, and the ions are accelerated and controlled by electrodes on the acceleration grid 415, so that the ion beam obtains specific energy and speed. By the action of the high voltage electrode of the acceleration grid 415, the velocity of the ions is accelerated during their rising, so that they acquire a higher kinetic energy. Meanwhile, by adjusting the potential of the acceleration grating 415, the speed and energy distribution of ions in the ion beam can be controlled, and efficient control of the ion beam is realized.
The purpose of the deceleration grid 416 is to decelerate the ion beam to a lower energy by electrostatically analyzing the ion beam.
The energy of the ion beam can be controlled by the cooperation of the acceleration gate 415 and the deceleration gate 416, so as to meet the energy requirements of different ion beams for sputtering and shaping.
Such as in ion beam sputtering, by decreasing the potential of the deceleration grid while increasing the potential of the acceleration grid, the energy of the ion beam can be increased to break the atomic bonds on the sample surface with sufficient energy to produce a sputtering effect. During ion beam shaping, the energy of the ion beam is reduced through the deceleration grid, the beam current density and the beam current angle are adjusted, and the ion beam can bombard the surface of a workpiece, so that high-power shaping is realized at a specific position on the surface of the film.
In order to further realize fine control of the ion beam, so that one pulsed ion source 4 can meet the requirements of the ion beam during sputter deposition and during shaping, the present embodiment is specifically implemented by the ion beam control device 42.
The ion beam control device 42 of this embodiment includes a housing 421, an electromechanical shutter 422, an ion beam controller 423, a variable attenuator 424, and a magnetic lens 425.
One end of the housing 421 is connected to the ion beam exit port 4112, a housing space is provided inside the housing 421, an electromechanical shutter 422, an ion beam controller 423, a variable attenuator 424, and a magnetic lens 425 are sequentially disposed in the housing space inside the housing 421 in the ion beam transmission direction, the other end of the housing 421 is an ion beam exit port,
the electromechanical shutter 422 is used to control the opening and closing of the ion beam, in this embodiment, the electromechanical shutter 422 is an electronic front shutter, the ion beam controller 423 is used to control the energy of the ion beam, the variable attenuator 424 is used to control the flux of the ion beam, and further adjust the intensity of the ion beam, and the magnetic lens 425 is used to adjust the ion beam focusing to control the shape and energy distribution of the ion beam to achieve the desired processing effect.
By providing the ion beam controller 423 and the variable attenuator 424 in the ion beam control apparatus 42, the ion beam controller 423 can adjust voltages of the screen 414, the acceleration screen 415, and the deceleration screen 416 to achieve a desired ion beam shape and energy distribution, and the variable attenuator 424 is used to adjust the flow of the ion beam to control the sputtering depth and surface topography; the electromechanical shutter 422 can ensure that the ion beam irradiates only the surface area to be treated, the ion beam can be focused in the required area through the arrangement of the magnetic lens 425, and the position and shape of sputtering and shaping can be controlled by adjusting the focusing of the ion beam, so that the ion beam sputtering and shaping can be accurately realized.
More specifically, when performing ion beam sputtering, the electromechanical shutter 422 is in a normally open state to allow a pulse ion beam to pass through, and under the action of the pulse ion beam, the ion beam passing through the electromechanical shutter 422 has a constant pulse frequency and width, and at this time, the ion beam controller 423 can adjust the voltages of the screen grid 414, the acceleration grid 415 and the deceleration grid 416 to make the energy distribution of the ion beam in a high energy state, and simultaneously, the variable attenuator 424 is used to control the number of ions in the ion beam, so as to adjust the intensity of the ion beam, so that more ion flows bombarded on the target P can be sputtered and deposited on the surface of the workpiece S, and the efficiency of ion beam sputtering is improved.
When the ion beam shaping is performed, the opening of the electromechanical shutter 422 is consistent with the pulse frequency of the ion beam emitted by the pulse ion source 4, the electromechanical shutter 422 is opened in the area where the shaping is required on the surface of the film, the ion beam passes through the area where the shaping is not required, the electromechanical shutter 422 is closed, and the ion beam is forbidden to pass through, at this time, the ion beam controller 423 can adjust the voltages of the screen grid 414, the acceleration grid 415 and the deceleration grid 416 to enable the energy distribution of the ion beam to be in a low energy state, and simultaneously, the variable attenuator 424 is used for reducing the number of ions in the incident ion beam, reducing the intensity of the ion beam, enabling the ion beam to precisely irradiate the shaped area, and realizing the high-precision shaping of the surface of the film by the ion beam with low energy.
By arranging an ion beam control device and an ion beam generation device to be matched, parameters such as energy, strength and the like of the ion beam can be accurately controlled, and the fine adjustment and control of sputtering and shaping in the film preparation process can be respectively realized, so that the quality and consistency of the film are improved, and the accuracy and consistency of the process are improved.
As some preferred embodiments, the ion beam control device 42 further includes a beam splitter 426 and an ion spectrometer 427 disposed in the housing 421, where the beam splitter 426 is disposed between the variable attenuator 424 and the magnetic lens 425, and the ion beam can be divided into a plurality of beam streams by the arrangement of the beam splitter 426, so as to perform a treatment of a plurality of regions, and improve the efficiency of sputter deposition of the thin film.
The ion spectrometer 427 is configured to receive the ion beam reflected from the surface of the beam splitter 426 and to detect parameters of the ion beam. By providing the ion spectrometer 427, the mass, quantity and energy of various ions in the ion beam can be measured, and by accurately and finely monitoring and adjusting the energy distribution of the ion beam, the quality and effect of ion beam processing can be ensured, and the processing precision and stability can be improved.
In order to realize that the atoms stripped by the bombardment of the target material P can be stably deposited on the surface of the workpiece S to form a flat film, in this embodiment, the surface of the second workbench 3 on which the target material P is loaded forms an angle of 45 ° with the lower surface of the first workbench 2, and meanwhile, the ion beam emitted by the pulsed ion source 4 in the initial state is parallel to the lower surface of the first workbench 2, so that the ion beam emitted by the pulsed ion source 4 irradiates the surface of the target material P to form an angle of 45 ° with the target material P, and after the bombardment of the target material P, the atoms or molecules on the target material P are stripped from the surface of the target material P to form an ion flow, and are upwards deposited on the surface of the workpiece S to form the required film.
The driving device 5 is used for driving the pulsed ion source 4 to turn over so that the direction of the ion beam emitted by the pulsed ion source 4 is parallel or perpendicular to the lower surface of the first workbench 2. When the pulse ion source 4 finishes the ion beam sputtering operation, the driving device 5 turns over the pulse ion source 4 by 90 degrees, so that the ion beam emitted by the pulse ion source 4 is vertical to the surface of the workpiece S, and the ion beam can reshape the film on the surface of the workpiece S. The driving device 5 disclosed in this embodiment is a turnover mechanism, and the turnover mechanism may be a conventional mechanical structure.
In order to achieve uniform film preparation on the surface of the workpiece S and make full use of the target P, the preparation apparatus of the embodiment further includes a first moving mechanism 6 and a second moving mechanism 7 disposed in the vacuum chamber, the first moving mechanism 6 is used for driving the first workbench 2 to translate in the horizontal direction, and the second moving mechanism 7 is used for driving the second workbench 3 to translate in the horizontal direction and the vertical direction.
When the ion beam sputtering is carried out, the pulse ion source 4 is kept motionless, the ion beam is parallel to the workpiece S, the ion beam irradiates the surface of the target P, the second moving mechanism 7 can move back and forth in the horizontal direction so as to drive the target P to move back and forth in the horizontal direction, in this way, the ion beam bombards the surface of the target P gradually in the horizontal direction, when the ion beam irradiates the edge of the target P in the horizontal direction, the second moving mechanism 7 translates in the vertical direction, the target P translates in the vertical direction by a displacement amount which is the spot diameter of the ion beam, thereby realizing the bombardment of the ion beam on the surface of the target P line by line, and in the bombardment sputtering process of the target P, the first moving mechanism 6 drives the first workbench 2 to translate in the X, Y direction on the horizontal plane and keep synchronous with the movement of the target P, so that the uniform sputtering of the surface of the workpiece S is realized.
When the ion beam shaping is carried out, the driving device 5 drives the pulse ion source 4 to turn over 90 degrees, so that the direction of the ion beam is vertical to the workpiece S, at the moment, under the cooperation of the image acquisition equipment, the acquisition of the bad shape of the film surface is completed, and only the first moving mechanism 6 drives the first workbench 2 to carry out the translation in the X, Y direction on the horizontal plane, and under the cooperation of the pulse ion source 4, the shaping and the shaping of the bad area of the film surface are realized, and the surface of the film is leveled.
In the above embodiment, the first moving mechanism 6 and the second moving mechanism are both linear modules.
As some preferred embodiments, the preparation apparatus further comprises an auxiliary ion source 8 disposed in the vacuum chamber 1, the auxiliary ion source 8 being used for auxiliary deposition of the surface of the workpiece S. It is noted that the auxiliary ion source 8 adopts ion beam auxiliary deposition, which is to implant ions into the incomplete position of the film surface of the workpiece S, so that the film and the substrate are mixed at the interface caused by cascade collision initiated by the implanted ions, and a transition layer is generated for firm combination.
The invention also discloses a film preparation method based on ion beam sputtering deposition and shaping, which utilizes the preparation device and comprises the following operation steps:
s1, placing a workpiece S and a target P in a vacuum chamber 1, mounting the workpiece S on the lower surface of a first workbench 2, mounting the target P on the surface of a second workbench 3, and vacuumizing the vacuum chamber 1;
s2, driving the direction of the ion beam emitted by the pulse ion source 4 to be parallel to the lower surface of the first workbench 2 through the driving device 5, starting the pulse ion source 4, and enabling the ion beam emitted by the pulse ion source 4 to bombard the target P so as to sputter and deposit on the surface of the workpiece S to form a film;
s3, after ion beam sputtering deposition is completed, driving the direction of the ion beam emitted by the pulse ion source 4 to be perpendicular to the lower surface of the first workbench 2 through the driving device 5, and starting the pulse ion source 4 to enable the ion beam emitted by the pulse ion source 4 to reshape a film on the surface of the workpiece S.
The steps of the ion beam sputtering process are specifically described below:
1. preparing a target workpiece S and a target material P, and placing the target workpiece S and the target material P on a first workbench 2 and a second workbench 3 corresponding to the vacuum chamber 1;
2. irradiating the ion beam emitted by the pulse ion source 4 to the surface of the target material P;
3. the voltages of the screen grating 414, the deceleration grating 416 and the acceleration grating 415 are controlled, so that the frequency and the width of the pulse ion beam are increased, the total energy of the ion beam is increased, the acceleration voltage and the focusing parameters are regulated by using the ion beam controller 423, the energy and the focusing effect of the ion beam are increased, and the ion beam with higher energy is realized;
4. the variable attenuator 424 is used to increase the intensity of the ion beam before it enters the target surface to control the sputter depth and surface topography;
5. an electromechanical shutter 422 is used to control the beam current on/off, ensuring that the ion beam irradiates only the surface area to be treated.
6. The position and shape of sputtering is controlled by adjusting the focus of the ion beam by focusing the ion beam in a desired region using a magnetic lens 425.
The steps of the ion beam shaping process are specifically described below:
1. the pulse ion source 4 is turned over by 90 degrees through the driving device 5, so that the ion source emitted by the pulse ion source 4 is vertical to the surface of the workpiece S;
2. the amplitude and width of the pulsed ion beam are reduced by controlling the voltages of the deceleration grid 416 and the acceleration grid 415, the total energy of the ion beam is reduced, and the acceleration voltage and focusing parameters are reduced by an ion beam controller, so that the energy and focusing effect of the ion beam are reduced;
3. an electromechanical shutter 422 is used to control the opening and closing of the ion beam to ensure that the ion beam irradiates only the surface area to be treated;
4. the intensity of the ion beam is reduced using a variable attenuator 424;
5. the ion beam is focused using a magnetic lens 425 and directed to the area of the film surface where shaping is desired.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (9)
1. The film preparation device based on ion beam sputtering deposition and shaping is characterized by comprising:
a vacuum chamber (1);
a first table (2) for loading a workpiece (S) which is provided on the upper part of the vacuum chamber (1), the lower surface of the first table (2) being parallel to the horizontal plane;
a second table (3) for loading a target (P), which is disposed in the vacuum chamber (1) and is located below the first table (2);
the pulse ion source (4) is arranged in the vacuum chamber (1) and positioned at one side of the second workbench (3) in the horizontal direction and is used for emitting an ion beam to the surface of the target material (P) for sputter deposition or for emitting the ion beam to shape a film deposited on the surface of the workpiece (S);
and the driving device (5) is arranged in the vacuum chamber (1) and used for changing the direction of the ion beam emitted by the pulse ion source (4) so as to switch the ion beam on the surface of the target material (P) and the surface of the workpiece (S).
2. The ion beam sputter deposition and shaping-based thin film manufacturing apparatus as recited in claim 1 wherein: the pulsed ion source (4) comprises an ion beam generating device (41) and an ion beam control device (42) connected with the ion beam generating device (41).
3. The ion beam sputter deposition and shaping-based thin film manufacturing apparatus as recited in claim 2, wherein: the ion beam generating device (41) comprises a protective cover (411), a gas isolator (412) arranged in the protective cover (411), a discharge reaction chamber (413), a screen grid (414), an acceleration grid (415) and a deceleration grid (416);
a gas inlet (4111) is formed in the protective cover (411), one end of the gas isolator (412) is communicated with the gas inlet (4111), the other end of the gas isolator is connected with the discharge reaction chamber (413), and a radio frequency induction coil (417) is arranged on the outer wall of the discharge reaction chamber (413) in a surrounding mode;
the screen grid (414), the acceleration grid (415) and the deceleration grid (416) are sequentially arranged at one end of the discharge reaction chamber (413) far away from the gas isolator (412), the extraction voltage of the screen grid (414) is positive voltage, the extraction voltage of the acceleration grid (415) is negative voltage, and the extraction voltage of the deceleration grid (416) is zero voltage or positive voltage;
an ion beam outlet (4112) is formed in one side, close to the deceleration grid (416), of the protective cover (411), and the ion beam outlet (4112) is connected with the ion beam control device (42).
4. The ion beam sputter deposition and shaping-based thin film manufacturing apparatus as recited in claim 3 wherein: the ion beam control device (42) comprises a shell (421), an electromechanical shutter (422), an ion beam controller (423), a variable attenuator (424) and a magnetic lens (425), wherein one end of the shell (421) is connected with an ion beam emergent port (4112), the electromechanical shutter (422), the ion beam controller (423), the variable attenuator (424) and the magnetic lens (425) are sequentially arranged inside the shell (421) along the ion beam transmission direction, the electromechanical shutter (422) is used for controlling the opening and closing of an ion beam, the ion beam controller (423) is used for controlling the energy of the ion beam, the variable attenuator (424) is used for controlling the flow of the ion beam, and the magnetic lens (425) is used for adjusting the ion beam focusing.
5. The ion beam sputter deposition and shaping-based thin film forming apparatus of claim 4 wherein: the ion beam control device (42) further comprises a beam splitter (426) and an ion spectrometer (427), wherein the beam splitter (426) is arranged in the shell (421), the beam splitter (426) is arranged between the variable attenuator (424) and the magnetic lens (425), and the ion spectrometer (427) is used for receiving an ion beam reflected by the surface of the beam splitter (426) and detecting ion beam parameters.
6. The ion beam sputter deposition and shaping-based thin film manufacturing apparatus as recited in claim 1 wherein: the surface of the second workbench (3) for loading the target material (P) forms an angle of 45 degrees with the lower surface of the first workbench (2), and the driving device (5) is used for driving the pulse ion source (4) to overturn so that the direction of the ion beam emitted by the pulse ion source (4) is parallel or perpendicular to the lower surface of the first workbench (2).
7. The ion beam sputter deposition and shaping-based thin film manufacturing apparatus as recited in claim 6 wherein: the preparation device further comprises a first moving mechanism (6) and a second moving mechanism (7) which are arranged in the vacuum chamber (1), the first moving mechanism (6) is used for driving the first workbench (2) to translate in the horizontal direction, and the second moving mechanism (7) is used for driving the second workbench (3) to translate in the horizontal direction and the vertical direction.
8. The ion beam sputter deposition and shaping-based thin film manufacturing apparatus as recited in claim 1 wherein: the preparation device further comprises an auxiliary ion source (8) arranged in the vacuum chamber (1), wherein the auxiliary ion source (8) is used for carrying out auxiliary sputtering on the surface of the workpiece (S).
9. A method for preparing a thin film based on ion beam sputter deposition and shaping, using the preparation device according to any one of claims 1 to 8, characterized by comprising the following operation steps:
s1, placing a workpiece (S) and a target (P) in a vacuum chamber (1), installing the workpiece (S) on the lower surface of a first workbench (2), installing the target (P) on the surface of a second workbench (3), and vacuumizing the vacuum chamber (1);
s2, driving the direction of the ion beam emitted by the pulse ion source (4) to be parallel to the lower surface of the first workbench (2) through the driving device (5), starting the pulse ion source (4), and enabling the ion beam emitted by the pulse ion source (4) to bombard the target (P) so as to sputter and deposit on the surface of the workpiece (S) to form a film;
s3, after ion beam sputtering deposition is completed, driving the direction of the ion beam emitted by the pulse ion source (4) to be vertical to the lower surface of the first workbench (2) through the driving device (5), and starting the pulse ion source (4) to enable the ion beam emitted by the pulse ion source (4) to shape a film on the surface of the workpiece (S).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102486465A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering and etching and in-situ physical property analysis system |
| CN106282917A (en) * | 2016-08-31 | 2017-01-04 | 北京埃德万斯离子束技术研究所股份有限公司 | Gallium nitride semiconductor thin film, gallium nitride based light emitting diode and preparation method |
| CN108385110A (en) * | 2018-04-04 | 2018-08-10 | 西安工业大学 | A kind of burnishing device and polishing method using in-situ sputtering coupled ion beam etching |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102486465A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Multifunctional ion beam sputtering and etching and in-situ physical property analysis system |
| CN106282917A (en) * | 2016-08-31 | 2017-01-04 | 北京埃德万斯离子束技术研究所股份有限公司 | Gallium nitride semiconductor thin film, gallium nitride based light emitting diode and preparation method |
| CN108385110A (en) * | 2018-04-04 | 2018-08-10 | 西安工业大学 | A kind of burnishing device and polishing method using in-situ sputtering coupled ion beam etching |
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