KR960026102A - Method of measuring pollution level of photosensitive material - Google Patents

Method of measuring pollution level of photosensitive material Download PDF

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Publication number
KR960026102A
KR960026102A KR1019940039244A KR19940039244A KR960026102A KR 960026102 A KR960026102 A KR 960026102A KR 1019940039244 A KR1019940039244 A KR 1019940039244A KR 19940039244 A KR19940039244 A KR 19940039244A KR 960026102 A KR960026102 A KR 960026102A
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South Korea
Prior art keywords
photosensitive material
light
measuring
contamination
angle
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KR1019940039244A
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Korean (ko)
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KR100278920B1 (en
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김형수
김진수
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김주용
현대전자산업 주식회사
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Priority to KR1019940039244A priority Critical patent/KR100278920B1/en
Publication of KR960026102A publication Critical patent/KR960026102A/en
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Publication of KR100278920B1 publication Critical patent/KR100278920B1/en

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Abstract

본 발명은 반도체 기판상에 일정 패턴을 형성하기 위해 사용되는 감광물질의 불순물 오염 측정방법에 관한 것으로, 감광물질 상부에 일정각도로 빛을 주사하고, 상기 주사된 빛이 불순물에 의해 오염된 감광물질을 통해 원래의 기준 굴절각으로부터 변화된 굴절각으로 나온 광과 원래의 오염되지 않은 감광물질을 통해 변화되지 않은 기준 굴절각으로 나온 광간의 수평방향 편위차를 센서를 통해 측정함으로써 감광물질의 오염도를 측정함으로써, 종래의 감광물질의 오염도 측정에 따르는 많은 소요시간을 줄일 수 있게 함과 아울러, 불순물의 오염도 측정을 신속, 정확하게 직접 측정할 수 있는 방법이다.The present invention relates to a method for measuring impurity contamination of a photosensitive material used to form a predetermined pattern on a semiconductor substrate, wherein light is scanned at a predetermined angle on the photosensitive material, and the scanned light is contaminated by impurities. By measuring the degree of contamination of the photosensitive material by measuring the horizontal deviation between the light from the original angle of refraction from the original reference angle and the light from the original uncontaminated photosensitive material through the reference unchanged reference refractive angle through the sensor, In addition to reducing the amount of time required to measure the contamination level of photoresist, it is a method to measure the contamination level of impurities directly and quickly.

Description

감광물질의 오염도 측정방법Method of measuring pollution level of photosensitive material

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 반도체 기판상에 감광물질을 도포한 후 노광한 상태의 단면도, 제2도는 불순물에 의해 감광물질에 불용층이 형성된 상태를 도시한 면도, 제3도는 제2도의 상태에서 현상공정을 실시한 후의 상태를 도시한 단면도.FIG. 1 is a cross-sectional view of the photosensitive material coated on a semiconductor substrate and then exposed. FIG. 2 is a view showing a state in which an insoluble layer is formed on the photosensitive material by impurities. FIG. 3 shows a development process in a state shown in FIG. Section which shows the state after.

Claims (5)

감광물질의 오염도를 측정하는 방법에 있어서, 반도체 기판 상부에 도포된 감광물질 상부에 일정각도로 빛을 주사하고, 상기 주사된 빛이 불순물에 의해 오염된 감광물질을 통해 원래의 기준 굴절각에서 변화된 굴절각으로 나온 광과 원래의 오염되지 않은 감광물질을 통해 변화되지 않은 기준 굴절각으로 나온 광간의 수평방향 편위차를 센서를 통해 측정, 분석함으로써 감광물질의 오염도를 측정하는 것을 특징으로 하는 감광물질의 오염도 측정방법.In the method of measuring the contamination level of the photosensitive material, the light is scanned at a predetermined angle on the photosensitive material coated on the semiconductor substrate, the refractive angle is changed from the original reference refractive angle through the photosensitive material contaminated by impurities Measurement of contamination level of photosensitive material by measuring and analyzing the horizontal deviation between the light emitted and the light emitted at the reference refracting angle unchanged through the original uncontaminated photosensitive material through a sensor Way. 제1항에 있어서, 상기 감광제는 화학 증폭형 감광제인 것을 특징으로 하는 감광물질의 오염도 측정방법.The method of claim 1, wherein the photosensitive agent is a chemically amplified photosensitive agent. 제1항에 있어서, 상기 불순물에 의해 오염된 감광제는 내부에 현상용액에 의해 용해되지 않은 불용층이 형성된 것을 특징으로 하는 감광물질의 오염도 측정방법.The method of claim 1, wherein the photoresist contaminated with the impurity is formed with an insoluble layer which is not dissolved by a developing solution. 제1항에 있어서, 상기 센서 내부에 흡수되는 광 강도를 통해 감광제의 광 흡수율 및 오염도를 측정하는 빛의 강도감지센서가 구비되는 것을 특징으로 하는 감광물질의 오염도 측정방법.The method of claim 1, wherein a light intensity sensor for measuring light absorption and contamination of the photosensitive agent is provided through the light intensity absorbed inside the sensor. 제1항에 있어서, 상기 불순물에 의해 오염된 감광물질의 오염정도는 불순물에 오염된 감광물질을 통해 변화된 굴절각으로 나온 광과 원래의 오염되지 않은 감광물질을 통해 변화되지 않은 기준 굴절각으로 나온 광간의 수평방향 편위차가 클수록 오염정도가 큰 것으로 되는 것을 특징으로 하는 감광물질의 오염도 측정방법.The method of claim 1, wherein the contamination degree of the photosensitive material contaminated by the impurity is determined between the light from the refractive angle changed through the photosensitive material contaminated with the impurity and the light from the reference refractive angle unchanged through the original uncontaminated photosensitive material. A method for measuring the pollution level of a photosensitive material, characterized in that the greater the horizontal deviation, the greater the degree of contamination. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039244A 1994-12-30 1994-12-30 Method of measuring pollution level of photosensitive material KR100278920B1 (en)

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KR1019940039244A KR100278920B1 (en) 1994-12-30 1994-12-30 Method of measuring pollution level of photosensitive material

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Application Number Priority Date Filing Date Title
KR1019940039244A KR100278920B1 (en) 1994-12-30 1994-12-30 Method of measuring pollution level of photosensitive material

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KR960026102A true KR960026102A (en) 1996-07-22
KR100278920B1 KR100278920B1 (en) 2001-01-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100513427B1 (en) * 1998-04-21 2005-11-30 삼성전자주식회사 Photoresist analysis method for semiconductor device manufacturing

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474281B1 (en) * 2003-04-28 2005-03-10 엘지전자 주식회사 Environmental sensor using film bulk acoustic resonator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100513427B1 (en) * 1998-04-21 2005-11-30 삼성전자주식회사 Photoresist analysis method for semiconductor device manufacturing

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