KR980003854A - Method for manufacturing semiconductor device and exposure apparatus used therein - Google Patents

Method for manufacturing semiconductor device and exposure apparatus used therein Download PDF

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Publication number
KR980003854A
KR980003854A KR1019960023221A KR19960023221A KR980003854A KR 980003854 A KR980003854 A KR 980003854A KR 1019960023221 A KR1019960023221 A KR 1019960023221A KR 19960023221 A KR19960023221 A KR 19960023221A KR 980003854 A KR980003854 A KR 980003854A
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KR
South Korea
Prior art keywords
exposure
exposure apparatus
photoresist
photosensitive film
semiconductor device
Prior art date
Application number
KR1019960023221A
Other languages
Korean (ko)
Other versions
KR100403322B1 (en
Inventor
김정희
한상준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960023221A priority Critical patent/KR100403322B1/en
Publication of KR980003854A publication Critical patent/KR980003854A/en
Application granted granted Critical
Publication of KR100403322B1 publication Critical patent/KR100403322B1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체소자의 제조방법 및 그에 사용되는 노광장치에 관한 것으로서, 축소노광장치에 FT-IR을 결합시킨 노광장치를 사용하여 일정 에너지로 일차 노광한 감광막의 감광제의 변화되는 성분을 FT-IR로 측정하여 노광영역의 감광막 저면에서의 완전 노광 여부를 파악하고, 그 결과에 따라 재노광 에너지를 결정하여 이차 노광을 실시하였으므로, 노광과 동시에 노광 에너지의 과다 여부를 알수가 있어 적정 노광에너지의 결정이 용이하고, 실험에 필요한 시간 및 노력이 절감되고, 실험에 소요되는 웨이퍼의 소모가 없어져 수율이 향상되며, 감광막의 위치에 따른 두께차가 보상할 수 있어 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.The present invention relates to a method for manufacturing a semiconductor device and an exposure apparatus used therein, wherein a FT-IR is used to change a component of a photoresist of a photosensitive film that is first exposed at a constant energy using an exposure apparatus in which an FT-IR is coupled to a reduction exposure apparatus. Since the secondary exposure was performed by re-exposure energy was determined based on the result of the photosensitive film in the exposure area and the exposure was determined according to the result, it is possible to determine whether the exposure energy is excessive. It is easy, and the time and effort required for the experiment is reduced, the yield is improved by eliminating the consumption of wafers required for the experiment, and the thickness difference according to the position of the photoresist film can be compensated to improve the process yield and the reliability of device operation. have.

Description

반도체소자의 제조방법 및 그에 사용되는 노광장치Method for manufacturing semiconductor device and exposure apparatus used therein

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 일반적인 포토레지스트의 노광전, 후의 성분 구성도.1 is a component configuration diagram before and after exposure of a general photoresist.

제2도는 본 발명에 따른 반도체소자 제조에 사용되는 노광장치를 설명하기 위한 개략도.2 is a schematic view for explaining an exposure apparatus used for manufacturing a semiconductor device according to the present invention.

Claims (2)

임의의 구조의 반도체기관상에 형성되어 있는 하부층상에 감광제를 포함하는 감광막을 도포하는 공정과, 상기 감광막을 선택 노광하되, 노광되는 부분에서의 감광제의 성분 변화를 FT-IR로 측정하여 노광 부분의 감광막의 하부층과의 계면에서의 감광제가 변화되는 노광에너지로 노광하는 공정과, 상기 감광막을 현상하여 감광막 패턴을 형성하는 공정을 구비하는 반도체소자의 제조방법.Applying a photoresist film containing a photoresist to a lower layer formed on a semiconductor engine having an arbitrary structure, and selectively exposing the photoresist, wherein the component change of the photoresist in the exposed part is measured by FT-IR to expose the exposed part. And exposing the photosensitive film at an exposure energy at the interface with the lower layer of the photosensitive film to change the exposure energy, and developing the photosensitive film to form a photosensitive film pattern. 웨이퍼를 선택 노광하는 축소노광장치부와, 상기 웨이퍼의 감광제의 성분 변화를 파악하는 FT-IR부와, 상기 FT-IR부의 분석 데이타를 적정 속도로 상기 축소노광장치의 샤터를 조절하는 데이터 처리부를 구비하는 노광장치.A reduction exposure unit for selectively exposing the wafer, an FT-IR unit for detecting component changes of the photosensitive agent of the wafer, and a data processing unit for adjusting the shater of the reduction exposure apparatus at an appropriate speed with analysis data of the FT-IR unit Exposure apparatus provided. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960023221A 1996-06-24 1996-06-24 Method for producing semiconductor device and exposure apparatus for use in the same KR100403322B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960023221A KR100403322B1 (en) 1996-06-24 1996-06-24 Method for producing semiconductor device and exposure apparatus for use in the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023221A KR100403322B1 (en) 1996-06-24 1996-06-24 Method for producing semiconductor device and exposure apparatus for use in the same

Publications (2)

Publication Number Publication Date
KR980003854A true KR980003854A (en) 1998-03-30
KR100403322B1 KR100403322B1 (en) 2004-05-10

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KR1019960023221A KR100403322B1 (en) 1996-06-24 1996-06-24 Method for producing semiconductor device and exposure apparatus for use in the same

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100818424B1 (en) 2006-12-28 2008-04-01 동부일렉트로닉스 주식회사 Method for automatically controlling expose energy

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749312A (en) * 1991-04-30 1995-02-21 Kyushu Electron Metal Co Ltd Method and apparatus of positioning wafer in infrared absorption measuring apparatus
JPH06177230A (en) * 1992-12-09 1994-06-24 Nippon Bio Ratsudo Lab Kk Noncontact type positioning conveyor
JPH0855770A (en) * 1994-08-11 1996-02-27 Toshiba Corp Semiconductor manufacturing device
JPH08111376A (en) * 1994-10-07 1996-04-30 Shin Etsu Handotai Co Ltd Mask aligning method

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