KR940015689A - Impurity Detection Method of Semiconductor Development Equipment Using Silicon Oxide Wafer - Google Patents

Impurity Detection Method of Semiconductor Development Equipment Using Silicon Oxide Wafer Download PDF

Info

Publication number
KR940015689A
KR940015689A KR1019920027346A KR920027346A KR940015689A KR 940015689 A KR940015689 A KR 940015689A KR 1019920027346 A KR1019920027346 A KR 1019920027346A KR 920027346 A KR920027346 A KR 920027346A KR 940015689 A KR940015689 A KR 940015689A
Authority
KR
South Korea
Prior art keywords
silicon oxide
detection method
oxide wafer
impurity detection
wafer
Prior art date
Application number
KR1019920027346A
Other languages
Korean (ko)
Other versions
KR960002245B1 (en
Inventor
이원곤
정종문
김정수
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019920027346A priority Critical patent/KR960002245B1/en
Publication of KR940015689A publication Critical patent/KR940015689A/en
Application granted granted Critical
Publication of KR960002245B1 publication Critical patent/KR960002245B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Formation Of Insulating Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

반도체 제조 공정중 포토 리소그라피의 단위 공정에서 포토레시스트를 현상하는 장비의 불순물을 검출할때, 약 3000정도의 산화막이 중착된 실리콘 산화막 웨이퍼를 사용하여 검출하는 방법.When detecting impurities in equipment that develops photoresist in the unit process of photolithography in the semiconductor manufacturing process, about 3000 A method of detecting using a silicon oxide wafer in which a degree of oxide film is deposited.

Description

실리콘 산화막 웨이퍼를 이용한 반도체 현상 장비의 불순물 검출 방법Impurity Detection Method of Semiconductor Development Equipment Using Silicon Oxide Wafer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

반도체 제조 공정중 포토 리소그라피의 단위 공정에서 포토레시트를 현상하는 장비의 불순물을 검출할때 실리콘 산화막 웨이퍼를 사용하여 검출하는 것을 특징으로 하는 실리콘 산화막 웨이퍼를 이용한 반도체 현상 장비의 불순물 검출 방법.A method of detecting impurities in a semiconductor development apparatus using a silicon oxide wafer, wherein the silicon oxide wafer is used to detect impurities in a device for developing a photoresist in a unit process of photolithography in a semiconductor manufacturing process. 제1항에 있어서, 상기 실리콘 산화막 웨이퍼의 산화막의 두께가 약 3000정도인 것을 특징으로 하는 실리콘 산화막 웨이퍼를 이용한 반도체 현상장비의 불순물 검출 방법.The thickness of the oxide film of the silicon oxide wafer is about 3000. An impurity detection method of a semiconductor developing equipment using a silicon oxide film wafer, characterized in that the degree. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920027346A 1992-12-31 1992-12-31 Method of detecting contamination meterials in semiconductor KR960002245B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920027346A KR960002245B1 (en) 1992-12-31 1992-12-31 Method of detecting contamination meterials in semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920027346A KR960002245B1 (en) 1992-12-31 1992-12-31 Method of detecting contamination meterials in semiconductor

Publications (2)

Publication Number Publication Date
KR940015689A true KR940015689A (en) 1994-07-21
KR960002245B1 KR960002245B1 (en) 1996-02-13

Family

ID=19348510

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920027346A KR960002245B1 (en) 1992-12-31 1992-12-31 Method of detecting contamination meterials in semiconductor

Country Status (1)

Country Link
KR (1) KR960002245B1 (en)

Also Published As

Publication number Publication date
KR960002245B1 (en) 1996-02-13

Similar Documents

Publication Publication Date Title
KR960026110A (en) Apparatus and method for cleaning a photomask
JPS5742039A (en) Method and device for detecting initial positions of easel and lens in photographic device
KR940015689A (en) Impurity Detection Method of Semiconductor Development Equipment Using Silicon Oxide Wafer
FR2338519A1 (en) FILM PROCESSING PHOTOGRAPHIC DEVICE
KR960026335A (en) Integrated circuit manufacturing method
KR980003854A (en) Method for manufacturing semiconductor device and exposure apparatus used therein
KR960026518A (en) Impurity contamination measurement method
FR2368740A1 (en) METHOD AND APPARATUS FOR FORMING IMAGES BY AN ELECTROSTATIC PROCESS
KR930001011A (en) Photolithography Processing Method of Semiconductor Device
KR950014983A (en) Photo etching method
KR910001461A (en) Photo process of semiconductor device
KR970028814A (en) Reticles for Semiconductor Device Manufacturing
KR880003217A (en) Monitoring method of semiconductor photo phenomenon by double exposure
KR970053230A (en) Method of measuring mask overlap in manufacturing semiconductor device
JPS5347821A (en) Microfish locator
KR980005287A (en) Stepper Equipment of Semiconductor Wafer
KR890005898A (en) Manufacturing method of solid state imaging device
KR970028690A (en) Method for manufacturing etching stopper of liquid crystal display device
KR950015577A (en) Manufacturing method of semiconductor device
KR970053265A (en) Film thickness measuring device used in semiconductor manufacturing process
KR970017916A (en) Spin scrubber device
KR970053316A (en) Wafer holder of semiconductor equipment
KR950021320A (en) Semiconductor defect analysis device
KR890016636A (en) Semiconductor chip position detection method in semiconductor wafer
KR950012662A (en) How to Measure Reticle Manufacturing Accuracy

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040119

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee